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    YAGEO Corporation RC0402JR-072R7L

    Thick Film Resistors - SMD 2.7Ohms 1/16W 0402 5%
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    TTI RC0402JR-072R7L Reel 120,000
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    G3297 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G3297 Hamamatsu GaAsP photodiode Original PDF

    G3297 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G1736

    Abstract: G1735 G1737 G1738 G1740 G3297
    Text: PHOTODIODE GaAsPフォトダイオード 拡散型 赤感度延長タイプ 特長 用途 l 低暗電流 l 高安定性 l 赤感度延長タイプ l 分析機器 l 色識別 • 一般定格/絶対最大定格 型名 G1735 G1736 G1737 G1738 G1740 G3297 外形


    Original
    G1735 G1736 G1737 G1738 G1740 G3297 G1736 G1735 G1737 G1738 G1740 G3297 PDF

    G1735

    Abstract: G1736 G1737 G1738 G1740 G3297
    Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings


    Original
    G1735 G1736 G1737 G1738 G1740 G3297 SE-171 KGPD1003E01 G1735 G1736 G1737 G1738 G1740 G3297 PDF

    G1735

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. G1735 G1736 G1737 G1738


    Original
    G1735 G1736 G1737 G1738 G1740 G3297 KGPD1003E02 PDF

    G1735

    Abstract: G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735
    Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings


    Original
    G1735 G1736 G1737 G1738 G1740 G3297 SE-171 KGPD1003E01 G1735 G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types Type No. Dim ensional Outline (P.44-50)/ W indow Material Package Active Area Size Effective Active Area - (mm). (mm2) Spectral Response Range A (nm) Photo Sensitivity S Typ. (A/W ) , Peak Sensitivity Wavelength Ap : (nm)


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    G1116 G1117 G1120 G1737 KGPDB0004EA G1118, G3067, G1735, G1738j KSPDB0007EA PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types - Type No. I Dimensional Outline (P.46 to 53)/ Window Material '1 Area X Peak Sensitivity Wavelength ^p (mm2) (nm) (nm) Effective Active Active Package Area Size (mm) Spectral Response Range Photo Sensitivity S (A/W)


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    Isc100 G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 G5645 G5842 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types Dim ensional Outline (P.46 to 50V Package W indow Material *1 | T ype No. Active Area Size (mm) Area X Peak Sensitivity Wavelength Xp (mm2) (nm) (nm) Effective Spectral Response Range Photo Sensitivity S (A/W) Xp GaP LED


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    G1117 G1118 G1120 G2711-01 KGPDB0004 KGPDB0005EA KGPDB0007EA KGPDB0008EA PDF

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    S1087. S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02. S6801-01 S6926. GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode PDF

    Untitled

    Abstract: No abstract text available
    Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current


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    0GG5532 560nm 633nm G1116 G1117 G1118 G1120 S1133, S1133-03, S1787 PDF

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE PDF

    g1962-01

    Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
    Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt


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    100lux 2856K 1Q-90% G1117 G1120 G2711 G1735 G1736 G1737 G1738 g1962-01 u1116 G1126-02 hamamatsu PIN TO5 3x1015 PDF

    1117G

    Abstract: G1115
    Text: GaAsP Photodiodes Diffusion Types Type No. Dimensional Outline (P .4 0 -4 5 )/ W indow Package M aterial* Active A rea Size (mm) Effective Active A rea (m m 2) Spectral R esponse R ange A P eak Sensitivity Wavelength Ap (nm) (nm) Photo Se isitivity S (MN) Typ.


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    560nm 633nm G3067 G2711 G1115 G2711 G1735 G3297 1117G PDF