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    OMRON Industrial Automation F39-HGA1320

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    DigiKey F39-HGA1320 Bulk 1
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    RS F39-HGA1320 Bulk 1
    • 1 $307.83
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    Broadcom Limited MGA-13216-BLKG

    IC AMP CDMA 1.5GHZ-2.5GHZ 16QFN
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    Broadcom Limited MGA-13216-TR1G

    IC AMP CDMA 1.5GHZ-2.5GHZ 16QFN
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    EBV Elektronik MGA-13216-TR1G 22 Weeks 1,000
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    Broadcom Limited QMGA-13216-TR1G

    IC RF AMP
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    Amphenol Communications Solutions PGA132H004B1-1367R

    PGA SOCKET 132 CTS
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    GA 132 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    infineon c167 bare die

    Abstract: ba 4614 4614 Ba 4164 ram bosch ac drive AN10 AN11 C166 C167CR SAK-C167CR-4RC
    Text: Microcontrollers C166 Family 16-Bit Single-Chip Microcontroller C167CR-xC, Bare Die, Step GA Data Sheet 1999-11 Bare Die Delivery www.infineon.com C167CR-xC Step GA C167CR-xC Revision History: (Bare Die Delivery) 1999-11, Step GA Previous Versions: 1999-11


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    16-Bit C167CR-xC, C167CR-xC C167CR infineon c167 bare die ba 4614 4614 Ba 4164 ram bosch ac drive AN10 AN11 C166 SAK-C167CR-4RC PDF

    33J100

    Abstract: 33J10R 33J15R 33J1R0 33J20R 33J25R 33J5R0 35J1R5 35J2R5 6554 substitution
    Text: High Energy Wirewound Resistors Axial Leaded / Surface Mount / Heat Sinkable Packaging in. / mm 33J: 0.593 / 15.1 35J: 0.937 / 23.8 30J: 1.842 / 46.8 1.5 / 38.1 33J: 0.218 / 5.5 35J: 0.343 / 8.7 30J: 0.406 / 10.3 33J: 20 ga. 35J: 18 ga. 30J: 18 ga. 0.546 / 13.87


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    825JxxxH: 33Jxxx 35Jxxx 30Jxxx 825JxxxH 33J100 33J10R 33J15R 33J1R0 33J20R 33J25R 33J5R0 35J1R5 35J2R5 6554 substitution PDF

    heat sinkable

    Abstract: No abstract text available
    Text: High Energy Wirewound Resistors Axial Leaded / Surface Mount / Heat Sinkable Packaging in. / mm 33J: 0.593 / 15.1 35J: 0.937 / 23.8 30J: 1.842 / 46.8 1.5 / 38.1 33J: 0.218 / 5.5 35J: 0.343 / 8.7 30J: 0.406 / 10.3 33J: 20 ga. 35J: 18 ga. 30J: 18 ga. 825JxxxH: 1.938 / 49.23


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    825JxxxH: 33J1R0 33J5R0 33J10R 33J15R 33J20R 33J25R 33J30R 33J50R 33J100 heat sinkable PDF

    33j50

    Abstract: No abstract text available
    Text: High Energy Wirewound Resistors Axial Leaded / Surface Mount / Heat Sinkable Packaging in. / mm 33J: 0.593 / 15.1 35J: 0.937 / 23.8 30J: 1.842 / 46.8 1.5 / 38.1 33J: 0.218 / 5.5 35J: 0.343 / 8.7 30J: 0.406 / 10.3 33J: 20 ga. 35J: 18 ga. 30J: 18 ga. 825JxxxH: 1.938 / 49.23


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    33J1R0 33J5R0 33J10R 33J15R 33J20R 33J25R 33J30R 33J50R 33J100 35J1R5 33j50 PDF

    825J100H

    Abstract: No abstract text available
    Text: High Energy Wirewound Resistors Axial Leaded / Surface Mount / Heat Sinkable Packaging in. / mm 33J: 0.593 / 15.1 35J: 0.937 / 23.8 30J: 1.842 / 46.8 1.5 / 38.1 33J: 0.218 / 5.5 35J: 0.343 / 8.7 30J: 0.406 / 10.3 33J: 20 ga. 35J: 18 ga. 30J: 18 ga. 825JxxxH: 1.938 / 49.23


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    33J1R0 33J5R0 33J10R 33J15R 33J20R 33J25R 33J30R 33J50R 33J100 35J1R5 825J100H PDF

    4r70

    Abstract: j13000 33J100 SMD resistors 1806 680 ohms resistor 5 watt datasheet axial resistors 35J smd 20-544 33j50 RESISTOR AXIAL
    Text: High Energy Wirewound Resistors Axial Leaded / Surface Mount / Heat Sinkable Packaging in. / mm 33J: 0.593 / 15.1 35J: 0.937 / 23.8 30J: 1.642 / 41.7 1.5 / 38.1 33J: 0.218 / 5.5 35J: 0.343 / 8.7 30J: 0.406 / 10.3 33J: 20 ga. 35J: 18 ga. 30J: 18 ga. 0.546 / 13.87


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    825JxxxH: 33Jxxx 35Jxxx 30Jxxx 825JxxxH 4r70 j13000 33J100 SMD resistors 1806 680 ohms resistor 5 watt datasheet axial resistors 35J smd 20-544 33j50 RESISTOR AXIAL PDF

    680 ohms resistor 5 watt datasheet

    Abstract: SMD resistors .5 w smd fuse m Wire wound resistor 47 ohm 33J100 D 1876 FUSE SMD Transistor D 2494 smd fuse 15 SMD RESISTOR 100 OHMS
    Text: High Energy Wirewound Resistors Axial Leaded / Surface Mount / Heat Sinkable Packaging in. / mm 33J: 0.593 / 15.1 35J: 0.937 / 23.8 30J: 1.842 / 46.8 1.5 / 38.1 33J: 0.218 / 5.5 35J: 0.343 / 8.7 30J: 0.406 / 10.3 33J: 20 ga. 35J: 18 ga. 30J: 18 ga. 825JxxxH: 1.938 / 49.23


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    825JxxxH: 33J1R0 33J5R0 33J10R 33J15R 33J20R 33J25R 33J30R 33J50R 33J100 680 ohms resistor 5 watt datasheet SMD resistors .5 w smd fuse m Wire wound resistor 47 ohm 33J100 D 1876 FUSE SMD Transistor D 2494 smd fuse 15 SMD RESISTOR 100 OHMS PDF

    Untitled

    Abstract: No abstract text available
    Text: High Energy Wirewound Resistors STANDARD PART NUMBERS Axial Leaded / Surface Mount / Heat Sinkable Packaging in. / mm 33J: 0.593 / 15.1 35J: 0.937 / 23.8 30J: 1.842 / 46.8 1.5 / 38.1 33J: 0.218 / 5.5 35J: 0.343 / 8.7 30J: 0.406 / 10.3 33J: 20 ga. 35J: 18 ga.


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    PDF

    TRANSISTOR C 4460

    Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E
    Text: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and


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    AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 OT-23, TRANSISTOR C 4460 AT-41533 544 code marking amplifier zo 103 ma AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E PDF

    nf 820

    Abstract: AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 S21E
    Text: General Purpose, Low Noise NPN␣ Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and


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    AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, nf 820 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E PDF

    AT-41511

    Abstract: AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 S21E AT415
    Text: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and


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    AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E AT415 PDF

    NE24200

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip


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    NE24200 NE24200 24-Hour PDF

    DADR11

    Abstract: CXA1951AQ CXD2931GA-9 CXD2931R-9 NMEA0183
    Text: CXD2931R-9/GA-9 1 chip GPS LSI Description The CXD2931R-9/GA-9 is a dedicated LSI for the GPS Global Positioning System satellite-based position measurement system. This LSI contains a 32-bit RISC CPU, 2M-bit MASK ROM, RAM, UART, timer, and others. This LSI, used together with the RF LSI (CXA1951AQ),


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    CXD2931R-9/GA-9 CXD2931R-9/GA-9 32-bit CXA1951AQ) 16-channel SC-104 256K-byte 36K-byte DADR11 CXA1951AQ CXD2931GA-9 CXD2931R-9 NMEA0183 PDF

    CXA1951AQ

    Abstract: CXD2931GA-9 CXD2931R-9 NMEA0183
    Text: CXD2931R-9/GA-9 1 chip GPS LSI Description The CXD2931R-9/GA-9 is a dedicated LSI for the GPS Global Positioning System satellite-based position measurement system. This LSI contains a 32-bit RISC CPU, 2M-bit MASK ROM, RAM, UART, timer, and others. This LSI, used together with the RF LSI (CXA1951AQ),


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    CXD2931R-9/GA-9 CXD2931R-9/GA-9 32-bit CXA1951AQ) 16-channel SC-104 256K-byte 36K-byte CXA1951AQ CXD2931GA-9 CXD2931R-9 NMEA0183 PDF

    KMM374S1623DT-GA

    Abstract: No abstract text available
    Text: KMM374S1623DT PC133 Unbuffered DIMM Revision History Revision 0.0 May, 1999 • PC133 first published. Revision 0.1 (June, 1999) - Changed PCB Dimensions in PACKAGE DIMENSIONS REV. 0.1 June 1999 KMM374S1623DT PC133 Unbuffered DIMM KMM374S1623DT-GA SDRAM DIMM


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    KMM374S1623DT PC133 KMM374S1623DT-GA 16Mx72 KMM374S1623DT 400mil PDF

    PPM 63-012 g

    Abstract: leclanche ppmg 50127 leclanche PPM D 16027 G SA J-180 41 21 130 varistors+ve07+2750
    Text: Validity: April 01 rev:a PPM_g_CTE.doc/08.10.02 1 / 10 Metalised Polypropylene Capacitors Type PPM . g, ga, gb Applications • • • • • AC and DC Voltage Professional Use Small Motors Couplage / découplage, Audio Instrumentation Main Characteristics


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    doc/08 CH-1401 PPM 63-012 g leclanche ppmg 50127 leclanche PPM D 16027 G SA J-180 41 21 130 varistors+ve07+2750 PDF

    marking CODE GA

    Abstract: 83CNQ100A GA 89 40HFL40S02 83CNQ080GA 83CNQ100GA 3M LOT CODE MARKING D-61-8 case weight
    Text: Preliminary Data Sheet PD-20809 09/04 83CNQ.GA 83CNQ.GASM 83CNQ.GASL 80 Amp SCHOTTKY RECTIFIER New GenIII D-61 Package IF AV = 80Amp VR = 80-100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular


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    PD-20809 83CNQ. 80Amp 0-100V D-61-8 D61-8-SL D61-8-SM marking CODE GA 83CNQ100A GA 89 40HFL40S02 83CNQ080GA 83CNQ100GA 3M LOT CODE MARKING D-61-8 case weight PDF

    AS3010

    Abstract: MXT4400 MXT3010 fpga based Numerically Controlled Oscillator
    Text: AccessMaker Operations Guide Version 4.1 This document applies to AccessMaker Release 4.08 GA Order Number: 100517-05 M Maker Communications, Inc. 73 Mount Wayte Avenue Framingham, Massachusetts 01702 June 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved.


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    Governme27 AS3010 MXT4400 MXT3010 fpga based Numerically Controlled Oscillator PDF

    128MX64

    Abstract: DQ-41 u25 8pin
    Text: Product Specification 1GB 128MX64 SDRAM PC100/PC133 SODIMM General Information Rev: 1.1 VL466S2853CC-GA/GH/GL 1GB 128Mx64 SDRAM PC100/PC133 SODIMM WITH CONFORMAL COATING Description: The VL466S2853CC is a 128M x 64 Synchronous Dynamic RAM high density memory module.This memory


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    128MX64 PC100/PC133 VL466S2853CC-GA/GH/GL VL466S2853CC 32Mx8 144-pin A0-A12 DQ0-DQ63 DQ-41 u25 8pin PDF

    Untitled

    Abstract: No abstract text available
    Text: y£ t # A ALUMINUM ELECTROLYTIC CAPACITORS GA AXIAL SERIES INTRODUCTION E 3 _l < t GA Series Axial Lead Aluminum Electrolytic capacitors cover a wide range of values and voltages. These capacitors are suitable for general Industrial and commercial designs requiring continuous duty applications. This is a cost


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    PDF

    NE76038

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND Ga As MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 3.5 21 Ga 18 3 Lg = 0.3 im, Wg = 280 )im


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    NE76038 NE76038 NE76038-T1 24-Hour PDF

    TC4019BP

    Abstract: No abstract text available
    Text: C2MOS DIGITAL INTEGRATED CIRCUIT TC4019BP/BF/BFN SILIC0N•0N0LIT-HIC-TC4019B Q U A D AND/OR SELECT GATE_ TC4019B is fo u r circuit A N D -O R SELECT GATE. The basic circuit consists o f tw o 2 inp u t A N D ga te s and an O R ga te receiving tw o o u tp u ts from the A N D gates. The in p u t sign a ls


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    TC4019BP/BF/BFN ----------TC4019B TC4019B TC4019BP PDF

    Untitled

    Abstract: No abstract text available
    Text: GA Series Axial Lead Aluminum Electrolyticcapacitors cover a wide range of values and voltages. These capacitors are suitable for general Industrialand commercial designs requiring continuous dutyapplications. This is a cost effective capacitor suitablefor


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    PDF

    LG VARIABLE FREQUENCY DRIVE is3

    Abstract: ADZ8
    Text: 80960JS/JC 3.3 V Microprocessor Advance Information Datasheet Product Features ga Pin/Code Compatible with all 80960Jx Processors a High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 80960JS Ix the Bus Clock


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    80960JS/JC 80960Jx 80960JS 80960JC 32-Bit 80980JS/JC LG VARIABLE FREQUENCY DRIVE is3 ADZ8 PDF