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    GeneSic Semiconductor Inc GA06JT12-247

    TRANS SJT 1200V 6A TO247AB
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    DigiKey GA06JT12-247 Tube 1,260
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    NAC GA06JT12-247 30
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    GA06JT12 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA06JT12-247 GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 1200V 6A TO-247AB Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor -VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2

    Untitled

    Abstract: No abstract text available
    Text: GA06JT12-247 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA06JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.2 $ * $Date: 26-AUG-2014 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA06JT12-247 GA06JT12-247. 26-AUG-2014 GA06JT12 08E-47 26E-28 73E-10 86E-10

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN-10A: Driving SiC Junction Transistors SJT with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Introduction GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJT) with current ratings ranging from 4 A to 16 A. SiC


    Original     		PDF AN-10A: Oct-2011. Nov-2011. GA06JT12-247

    Untitled

    Abstract: No abstract text available
    Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards


    Original     		PDF GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN-10B: Driving SiC Junction Transistors SJT : Two-Level Gate Drive Concept Introduction Two-Level SJT Gate Drive Circuit GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with current ratings ranging from 3 A to 50


    Original     		PDF AN-10B: AN-10A Nov-2011. GA06JT12-247