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    GeneSic Semiconductor Inc GA08JT17-247

    TRANS SJT 1700V 8A TO247AB
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    GA08JT17 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA08JT17-247 GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 1700V 8A TO-247AB Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA08JT17-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.3 $ * $Date: 26-AUG-2014 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA08JT17-247 GA08JT17-247. 26-AUG-2014 GA08JT17 73E-47 50E-27 77E-10 23E-10

    HCPL-322J

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3 HCPL-322J