Untitled
Abstract: No abstract text available
Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
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Original
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GA100SICP12-227
OT-227
ReSIPC12
GA100SIPC12
00E-47
26E-28
75E-09
57E-09
00E-03
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PDF
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Untitled
Abstract: No abstract text available
Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier
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Original
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GA100SICP12-227
833E-48
073E-26
398E-9
026E-09
0E-03
GA100SIPC12
99E-16
3E-05
86E-09
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PDF
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Untitled
Abstract: No abstract text available
Text: GA100SICP12-227 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA100SICP12-227. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 30-MAR-2015 $ * * GeneSiC Semiconductor Inc.
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Original
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GA100SICP12-227
GA100SICP12-227.
30-MAR-2015
GA100SICP12-227
SUB33E-48
073E-26
398E-9
026E-09
0E-03
GA100SIPC12
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PDF
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Untitled
Abstract: No abstract text available
Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
|
Original
|
GA100SICP12-227
OT-227
Reduc00SIPC12
GA100SIPC12
00E-47
26E-28
75E-09
57E-09
00E-03
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PDF
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