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    GeneSic Semiconductor Inc GA10JT065-CAL

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    GA10JT06-CAL SPICE

    Abstract: high-temperature-sic-bare-die LTspice
    Text: GA10JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA10JT06-CAL.


    Original     		PDF GA10JT06-CAL sic/baredie/sjt/GA10JT06-CAL GA10JT06-CAL. 27-FEB-2014 GA10JT06 08E-47 26E-28 73E-10 86E-10 90E-2 GA10JT06-CAL SPICE high-temperature-sic-bare-die LTspice

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GA10JT06-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE(Tc = 25°C) = = = = 600 V 120 mΩ 25 A 120 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch


    Original     		PDF GA10JT06-CAL GA10JT06 4E-48 858E-28 96E-10 083E-10

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GA10JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 1.7 V 10 A 170 m Features •       250 °C maximum operating temperature Temperature independent switching performance


    Original     		PDF GA10JT065-CAL GA10JT065 73E-46 50E-28 77E-10 23E-10 20E-02 GA10JT065-CAL