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    GA200SA60UP Price and Stock

    Vishay Semiconductors VS-GA200SA60UP

    IGBT MOD 600V 200A 500W SOT227
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    Quest Components VS-GA200SA60UP 1
    • 1 $25.1258
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    Vishay Intertechnologies VS-GA200SA60UP

    Single Igbt, 600V, 200A; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.92V; Power Dissipation:500W; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Vishay VS-GA200SA60UP
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    Newark VS-GA200SA60UP Bulk 160
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    Vishay Intertechnologies GA200SA60UP

    100 A INSULATED GATE BIPOLAR TRANSISTOR (ULTRAFAST SPEED IGBT) Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
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    ComSIT USA GA200SA60UP 60
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    GA200SA60UP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA200SA60UPBF International Rectifier TRANS IGBT MODULE N-CH 600V 200A 4SOT-227 Original PDF

    GA200SA60UP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ga200sa60up

    Abstract: N-CHANNEL INSULATED GATE TYPE
    Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP 2002/95/EC OT-227 18-Jul-08 ga200sa60up N-CHANNEL INSULATED GATE TYPE

    e789

    Abstract: ic 3020
    Text: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 e789 ic 3020

    GA200SA60UP

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP OT-227 18-Jul-08 GA200SA60UP

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF VS-GA200SA60UP E78996 OT-227 OT-227electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP OT-227 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF VS-GA200SA60UP E78996 OT-227 30electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP OT-227 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27236 GA200SA60UP 20kHz OT-227

    ga200sa60up

    Abstract: No abstract text available
    Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27236 GA200SA60UP 20kHz 12-Mar-07 ga200sa60up

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor