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    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


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    PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    NEC 10F triac

    Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
    Text: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117


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    PDF TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP115 TLP115A TLP116 NEC 10F triac TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin

    p421f

    Abstract: TLP350 equivalent NEC 10F triac A 3150 igbt driver TLP759 "cross reference" P181 Photocoupler pc817 equivalent TLP250 MOSFET DRIVER application note p421 Photocoupler TLP582 COMPATIBLE
    Text: 2009-3 PRODUCT GUIDE Photocouplers and Photorelays SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Product Index Part Number CNY17-2 CNY17-3 CNY17-4 TLP105 TLP108 TLP109 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP116A TLP117


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    PDF CNY17-2 CNY17-3 CNY17-4 TLP105 TLP108 TLP109 TLP112 TLP112A TLP113 TLP114A p421f TLP350 equivalent NEC 10F triac A 3150 igbt driver TLP759 "cross reference" P181 Photocoupler pc817 equivalent TLP250 MOSFET DRIVER application note p421 Photocoupler TLP582 COMPATIBLE

    IC 1458 function generator

    Abstract: TSF 1303 GT 1081 SDHC specification nc 1458 p1 IN401 relay SRRN 2C F transistor 2N 2222 h 331 datasheet A 1458 ma 1458
    Text: REJ09B0033-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 SH7720 Group, SH7721 Group Hardware Manual


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    PDF REJ09B0033-0300 SH7720 SH7721 32-Bit SH7700 HD6417720 HD6417320 R8A77210 IC 1458 function generator TSF 1303 GT 1081 SDHC specification nc 1458 p1 IN401 relay SRRN 2C F transistor 2N 2222 h 331 datasheet A 1458 ma 1458

    tdfp11

    Abstract: tea 1402 ul 1203 compound REJ09B0317 HD6417720 R8A77210 SH7720 SH7721 ir receiver 38Khz and 56Khz SH7320
    Text: The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 SH7720 Group, SH7721 Group User's Manual: Hardware


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    PDF SH7720 SH7721 32-Bit Family/SH7700 HD6417720 HD6417320 R8A77210 R8A77211 tdfp11 tea 1402 ul 1203 compound REJ09B0317 HD6417720 R8A77210 ir receiver 38Khz and 56Khz SH7320

    FIFO4K18

    Abstract: ProASIC3E
    Text: ProASIC3E Flash Family FPGAs Device Architecture Introduction Flash Technology Advanced Flash Switch Unlike SRAM FPGAs, the ProASIC3E family uses a live on power-up ISP Flash switch as its programming element. Flash cells are distributed throughout the device to


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    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


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    PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136

    2RD17

    Abstract: No abstract text available
    Text: ProASIC3 Flash Family FPGAs Device Architecture Introduction Flash Technology Advanced Flash Switch Unlike SRAM FPGAs, the ProASIC3 family uses a live on power-up ISP Flash switch as its programming element. Flash cells are distributed throughout the device to


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    flashpro3 schematic

    Abstract: 3ccc6
    Text: ProASIC3 Flash Family FPGAs Device Architecture Introduction Flash Technology Advanced Flash Switch Unlike SRAM FPGAs, the ProASIC3 family uses a live on power-up ISP Flash switch as its programming element. Flash cells are distributed throughout the device to


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    zener 3.3

    Abstract: proasic3 a3p125 A3P060 manufacturing code
    Text: ProASIC3 Flash Family FPGAs Device Architecture Introduction Flash Technology Advanced Flash Switch Unlike SRAM FPGAs, the ProASIC3 family uses a live at power-up ISP Flash switch as its programming element. Flash cells are distributed throughout the device to


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    tlp250

    Abstract: 212J igbt drive tlp250
    Text: GaAGAs IRED a PHOTO-IC TLP250 TENTATIVE DATA Unit in mm TRANSISTOR INVERTER INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE The Toshiba TLP250 consists of a GaA£As light emitting diode and a integrated photodetector. This unit is 8-lead DIP package.


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    PDF TLP250 TLP250 5-35V 2500Vrms 212J igbt drive tlp250

    telefunken ha 870

    Abstract: No abstract text available
    Text: Tem ic BPV10NF S e m iconductors High Speed Silicon PIN Photodiode Description B PV 10N F is a high sensitive and wide bandw idth PIN photodiode in a standard T - l 'i plastic package. The black epoxy is an universal IR filter, spectrally m atched to GaA s X=950nm and G aA lA s ()t=870nm) [R em itters.


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    PDF BPV10NF BPV10N 950nm) 870nm) 870nm 15-Jul-96 telefunken ha 870

    K423

    Abstract: CI 8426
    Text: Temic BPV23NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description B PV 23N F is a high speed and high sensitive PIN photo­ diode in a plastic package w ith a spherical side view lens. T he epoxy package itself is an IR filter, spectrally m atched to G aA s on GaA s and G aA lA s on G aA lA s IR


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    PDF BPV23NF 15-Jul-96 K423 CI 8426

    LFI SOCKET

    Abstract: TR15
    Text: L.E.D. TECHNOLOGY UNDERSTANDING THE SUBJECT IS CUSTOMER SERVICE L.E.D. TECHNOLOGY, UNIT 8, POOL INDUSTRIAL ESTATE, DRUIDS ROAD, REDUTH, CORNWALL TR15 3RH. TEL : 0209 215424 TELEX : 45273 F1BDAT-G FA X : (Redruth) 215197 TECH NICAL INFO RM ATIO N SHEET


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    PDF 41X1-82 1X41X1Â LFI SOCKET TR15

    gaa 215

    Abstract: No abstract text available
    Text: Kontaktbelegung — D contact loading — B I 10 I 14 12 I 18 16 2:1 I 22 20 I 26 24 I 30 28 I 34 32 I 38 36 I 42 40 I 46 44 I 50 48 I 54 I 58 52 I 62 56 60 I 66 64 I 70 68 I 74 I 78 76 72 I 82 80 I 86 84 8 CU M Kontakt-Typ pin type a - A B C D E F G H J K L M


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    PDF D-32339 gaa 215

    Untitled

    Abstract: No abstract text available
    Text: LOWCOST AMPLIFIERS Available in 3 Pin TO-39 and Connectorized Housings The Low Cost "CZ" modules operate in frequencies of kHz to 1 GHz depending on the external coupling capacitors used and are designed for application in 50 ohm systems. Three external capacitors and a decoupling impedance are required. The


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    PDF CZ8040 CZ8111 CZ8120 CZ8220 CZ8230 CZ8052 CZ8050

    diode 9004

    Abstract: No abstract text available
    Text: SFH 900 SERIES SIEMENS Miniature Light Reflection Emitter/Sensor Dimensions in inches mm Plastic Flash (Between Lead s) S e nso r Surface .177 (4.5) .169 (4.8) 256 (6.5) .276 (7.0) L .012 (0.3) - H H .020 (0.5) '' .059 (1.5) .071 (1.8) FEATURES • Designed for short distances up to 5 mm


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    MAN6195

    Abstract: LN5060 hp 5082-7756 MAN6175 HD1132R hp 5082 0180 GL5P06A LN503R LN504R LN506RA
    Text: • L E D t -V X 7 U " Í •f v T Æ SP.iS U 14 -7 / - ¡-' ft * m w m { t , =25”Cj AH nm AA inm) ¡V If lined'1 imA'; Vf I r [ V S| (mA! '. M i 25’C'i s li.t S s if t s 3 ‘-< > ^ -g il 1. 71 ' ■yt v r, Dp it m i :mA' ÍV ' VO i.’C: 0.3 S II GaAsP


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    PDF MAN73A MAN4705A MAN4705A MAN6175 P2X14-2BÂ MD0657M-R) MD2057C-R) MD2057C-RG) SL-Q225 MAN6195 LN5060 hp 5082-7756 HD1132R hp 5082 0180 GL5P06A LN503R LN504R LN506RA

    BPY20

    Abstract: BPV20NF
    Text: Temic BPY20NFL S e i r i c ' n d u t u r - » Silicon PIN Photodiode Description BPV 20N FL is a high speed and high sensitive PIN photo­ diode in a plastic package with a cylindrical side view lens and extra long leads. The epoxy package itself is an IR filter, spectrally


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    PDF BPY20NFL 15-Jul-96 BPV20NFL BPY20 BPV20NF

    PC923 equivalent

    Abstract: ST ZO 103 TRIAC triac zo 109 ma triac ZO 109 st triac ZO 109 PC922 equivalent S202S02 application S216S02 Application note PC851 equivalent TRIAC ZO 103 MA
    Text: General Description of Optoelectronic Devices 2-1 General Description of Optoelectronic Devices 2-1-1 Infrared Emitting Diode LED * 1-24 , =— (1 ) Operating principle The infrared L E D utilizes the PN junction of gallium arsenide (G aA s) crystals.


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    PDF S101D01 S102S01 112S01/S116S01 S10211) PC923 equivalent ST ZO 103 TRIAC triac zo 109 ma triac ZO 109 st triac ZO 109 PC922 equivalent S202S02 application S216S02 Application note PC851 equivalent TRIAC ZO 103 MA

    Untitled

    Abstract: No abstract text available
    Text: bTTflSflO 0000752 7 • 27E D OPTEK TECHNOL OGY INC Product Bulletin OPL560 July 1989 Replaces August 1988 -qi-fco, 0 .Q P T E K Photologic Sensors Types QPL560, OPL561, OPL562, OPL563 Series Features • • • • • Four output options High noise immunity


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    PDF OPL560 QPL560, OPL561, OPL562, OPL563 OP140 OP240 OPL560, OPL560-00,

    OPB105

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC ObE D | bT'iôSÛO QOQQB^b 1 | u p iM io c ir o n ic i u iv is io r T R W Electronic Components Group m R ' wV Product Bulletin 5363 January 198S Photologic Slotted Optical Switches Type O PB 1050 0 Series OPB1Û51X Type H O U X O D O T M O K A T E S A NO D E


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    Untitled

    Abstract: No abstract text available
    Text: VITESSE PRELIMINARY FEATURES • Superior Perform ance: 200 Mb/s • Duty-cycle D istortion @ 200M b/s: < 20% • Operating R ange: -40° to +85° C • Pow er D issipation: 10 W atts Typical • Clocked o r Flow -through Operation • HCL F100K C om patible Inputs and Outputs


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    PDF F100K 344-pin VSC864A-2

    BQ2001

    Abstract: No abstract text available
    Text: ht bq2001 BENCHM ARQ Energy Management Unit EMU Features General Description >• Microprocessor peripheral for battery management and related functions The BiCMOS bq2001 Energy Manage­ ment Unit (EMU) is a low-power microprocessor peripheral providing


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    PDF bq2001 bq2001 bq2001-based 400nA 1991F 1991F 24-pin