SFH485P
Abstract: OHLPY985
Text: GaAlAs-IR-Lumineszenzdiode 880 nm GaAlAs Infrared Emitter (880 nm) Lead (Pb) Free Product - RoHS Compliant SFH 485 P Wesentliche Merkmale Features • GaAlAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger
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Q62703Q0516
720-SFH485P
SFH485P
OHLPY985
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Untitled
Abstract: No abstract text available
Text: TSAL6400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm
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TSAL6400
2002/95/EC
2002/96/EC
TSAL6400
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1020 TSML1000 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7
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TSML1000,
TSML1020,
TSML1030,
TSML1040
TSML1000
TSML1020
TSML1030
TEMT1000
J-STD-020
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET PHOTOCOUPLER PS9822-1,-2 1 Mbps OPEN COLLECTOR OUTPUT TYPE 8-PIN SSOP SO-8 HIGH-SPEED PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS9822-1 and PS9822-2 are active-low type high-speed photocouplers that use a GaAlAs light-emitting diode
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PS9822-1
PS9822-2
PS9822-1,
PS9822-1
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Untitled
Abstract: No abstract text available
Text: Not for New Design TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode in Side View Package Description TSSF4500 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package with
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TSSF4500
TSSF4500
18-Jul-08
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VSMB2020X01
Abstract: VEMD2000X01 VSMY2850 VSMB2000 VEMD20 980050
Text: VSMB2000X01, VSMB2020X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH VSMB2000X01 FEATURES VSMB2020X01 • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8
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VSMB2000X01,
VSMB2020X01
VSMB2000X01
AEC-Q101
VEMD2000X01
J-STD-020
2002/95/EC
2002/96/EC
2011/65/EU
VSMB2020X01
VSMY2850
VSMB2000
VEMD20
980050
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4580
Abstract: opto 2505 SFH4585 fotodiod
Text: GaAlAs-IR-Lumineszenzdioden 880 nm in SMR Gehäuse GaAlAs Infrared Emitters (880 nm) in SMR® Package Lead (Pb) Free Product - RoHS Compliant SFH 4580 SFH 4585 SFH 4580 SFH 4585 Wesentliche Merkmale Features • • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad
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720-SFH4580
720-SFH4585-Z
4585-Z
4580
opto 2505
SFH4585
fotodiod
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm GaAlAs Infrared Emitter (880 nm) Lead (Pb) Free Product - RoHS Compliant SFH 485 P Wesentliche Merkmale Features • GaAlAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger
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Q62703Q0516
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OD-669
Abstract: OD-663 OD-666
Text: HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 .325 LED CHIPS .140 R REF. ONLY OD-663 FEATURES .142 .152 • Super high power output • 880nm peak emission EPOXY .084 .096 .342 R .480 1.225 1.255 .030 .426 .432 • Three chips connected in series • TO-66 header for good heat dissipation
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OD-663
880nm
100Hz
OD-669
OD-663
OD-666
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OD-880FHT
Abstract: OD-880LHT OD-880WHT OD880FHT
Text: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS .006 HIGH MAX OD-880WHT ANODE CASE • Extended operating temperature range .209 .212 .015 • No internal coatings • No derating or heat sink required to 80°C .183 .152 .187 .156 .100 .041
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OD-880WHT
100mA
100Hz
OD-880FHT
OD-880LHT
OD-880WHT
OD880FHT
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OD-880
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS OD-880 FEATURES EPOXY DOME ANODE CASE .125 MAX • Very high power output .209 .212 .042 .046 .017 • Wide angle of emission • High reliability liquid-phase epitaxially grown GaAlAs • TO-46 Header .164 .167 .100 .041 All metal surfaces are gold plated. Dimensions are
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OD-880
100mA
100Hz
OD-880
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OHB660CB
Abstract: No abstract text available
Text: OHB660CB Red EMITTING DIODES The OHB660CB is a GaAlAs LED mounted in a TO-18 metal can package is ideal for use with plastic fiber optic cables. As light loss is minimal at a wavelength of 660nm. FEATURES ● Wide beam angle ● High-speed response ● Low profile package
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OHB660CB
OHB660CB
660nm.
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BL-BD131 SINCE 1981 ● Features: ● Package dimensions: 1. Chip material: GaAlAs/ GaAs 2. Emitted color : Super Red 3.80 .150 3. Lens Appearance : Red Diffused 3.00(.118) 4. Low power consumption. 5. High efficiency. 6. Versatile mounting on P.C. Board or panel.
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BL-BD131
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GPL06899
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package SFH 4281 Wesentliche Merkmale • GaAIAs-LED mit sehr hohem Wirkungsgrad • Gute Linearität Ιe = f [IF] bei hohen Strömen • Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich
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Untitled
Abstract: No abstract text available
Text: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package This technology represents best performance for
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TSML1000/1020/1030/1040
TSML1000
TSML10
TSML1020
TSML1030
TSML1040
D-74025
08-Mar-01
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Untitled
Abstract: No abstract text available
Text: TSHG6200 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in T-1¾ Package Description TSHG6200 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. The new technology combines high speed with high
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TSHG6200
TSHG6200
D-74025
04-Jun-04
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telefunken ha 880
Abstract: No abstract text available
Text: T em ic TSHA620 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-P/t Package Description The TSHA620. series are high efficiency infrared emit ting diodes in GaAlAs on GaAIAs technology, molded in a clear, untinted plastic package.
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TSHA620
TSHA620.
TSHA520.
I5-JuI-96
15-JuI-96
telefunken ha 880
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LT 5203
Abstract: a5201
Text: Temic TSHA520. S h m i n n d u t l •* r v GaAlAs Infrared Emitting Diodes in 05 mm (T-1% Package Description The TSH A 520. series are high efficiency infrared em itting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.
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TSHA520.
l5-Jul-96
LT 5203
a5201
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Untitled
Abstract: No abstract text available
Text: Tem ic TSAL4400 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 3 mm T -l Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol
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TSAL4400
TSAL4400
D-74025
04-Mar-98
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PDF
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TSTA7100
Abstract: No abstract text available
Text: Temic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant
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TSTA7100
TSTA7100
D-74025
15-Jul-96
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PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA 7100 is a high efficiency infrared em itting diode in G aA lA s on G aA lA s technology in a herm etically sealed T O -1 8 package. Its glass lens provides a very high radiant
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TSTA7100
15-Jul-96
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PDF
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LS 7447
Abstract: 7447 ls itt 7441
Text: T em ic TSIP440. S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diodes in 0 3 mm T-l Package Description T S I P 4 4 .- s e r ie s are h ig h e f f i c ie n c y in f r a r e d e m itt in g d io d e s in G a A I A s o n G a A s te c h n o lo g y , m o l d e d in c le a r ,
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TSIP440.
16-Oct-96
LS 7447
7447 ls
itt 7441
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8002E
Abstract: No abstract text available
Text: Tem ic TSHA520 S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 05 mm T-1% Package Description The TSHA520. series are high efficiency infrared emit ting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package,
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OCR Scan
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TSHA520
TSHA520.
15-JuI-96
15-Jul-96
8002E
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PDF
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ss 7941
Abstract: TSHA4400
Text: Tem ic TSHA440. S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 0 3 mm T -l Package Description The TSHA44.series are high efficiency infrared ermitting diodes in GaAlAs on GaAlAs technology, molde;d in a clear, untinted plastic package.
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TSHA440.
TSHA44.
D-74025
15-Jul-96
ss 7941
TSHA4400
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