Untitled
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode mit erhöhter Strahlungsleistung 950 nm GaAs Infrared Emitting Diode(950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 20 mW @ 100 mA im TOPLED Gehäuse
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0118G
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DIN 7967
Abstract: TEST2600 TSSS2600
Text: TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • • • 94 8672 DESCRIPTION TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with
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TSSS2600
TSSS2600
TEST2600
2002/95/EC
11-Mar-11
DIN 7967
TEST2600
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded
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TSAL5100
2002/95/EC
2002/96/EC
TSAL5100
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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TSUS5400
Abstract: TSUS5401 TSUS TSUS5402 TSUS-5402
Text: TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8390 DESCRIPTION TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.
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TSUS5400,
TSUS5401,
TSUS5402
TSUS5400
2002/95/EC
2002/96/EC
18-Jul-08
TSUS5401
TSUS
TSUS5402
TSUS-5402
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PDF
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Infrared Emitting Diode
Abstract: TEST2600 TSSS2600
Text: TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • • • 94 8672 DESCRIPTION TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with
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Original
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TSSS2600
TSSS2600
TEST2600
2002/95/EC
18-Jul-08
Infrared Emitting Diode
TEST2600
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded
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Original
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TSAL5100
2002/95/EC
2002/96/EC
TSAL5100
11-Mar-11
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PDF
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GMOY6177
Abstract: "Infrared LED" 880 nm Pulsed Forward Current
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 250 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 10 mil) F 0235F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • • • • Features Chipgröße 250 x 250 µm Emissionswellenlänge: 950 nm
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Original
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0235F
GMOY6177
"Infrared LED" 880 nm Pulsed Forward Current
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded
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Original
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TSAL5100
TSAL5100
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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PDF
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F 0094U
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Light Emitting Diode (950 nm, 12 mil) F 0094U F 0094V Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse
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0094U
F 0094U
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PDF
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Untitled
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
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TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
08-Apr-05
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PDF
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TSUS4400
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
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TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
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Original
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TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL5300 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in
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Original
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TSAL5300
2002/95/EC
2002/96/EC
TSAL5300
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TSAL5300 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in
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TSAL5300
TSAL5300
2002/95/EC
11-Mar-11
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PDF
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TSAL5100
Abstract: high power infrared led Infrared Emitting Diode GaAs 1000 nm Infrared Diode,
Text: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in
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Original
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TSAL5100
TSAL5100
2002/95/EC
2002/96/EC
18-Jul-08
high power infrared led
Infrared Emitting Diode
GaAs 1000 nm Infrared Diode,
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PDF
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optokoppler
Abstract: GaAs wafer dicing Chip free
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 200 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 8 mil) F 1235B F 1235C Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • • • Features Chipgröße 200 x 200 µm Emissionswellenlänge: 950 nm
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1235B
1235C
optokoppler
GaAs wafer dicing Chip free
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PDF
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GMOY6078
Abstract: Q65110A0136
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2
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0118G
GMOY6078
Q65110A0136
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PDF
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GCOY6878
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118J Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2
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0118J
GCOY6878
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PDF
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TSUS4300
Abstract: No abstract text available
Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.
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Original
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TSUS4300
TSUS4300
2002/95/EC
2002/96/EC
08-Apr-05
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PDF
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TSUS4300
Abstract: No abstract text available
Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.
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Original
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TSUS4300
TSUS4300
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
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PDF
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k 7947 e
Abstract: TSUS4300
Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.
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Original
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TSUS4300
TSUS4300
2002/95/EC
2002/96/EC
08-Apr-05
k 7947 e
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PDF
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GMOY6178
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 12 mil) F 0594A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2
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F 1235A
Abstract: 1235a F1235A
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 200 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 8 mil) F 1235A Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 10 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 200 x 200 µm2
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OPTOKOPPLER
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 250 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 10 mil) F 0235D Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 13 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 250 x 250 µm2
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0235D
OPTOKOPPLER
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