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    GAAS FET CHIP 581 Search Results

    GAAS FET CHIP 581 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    GAAS FET CHIP 581 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C-Band Power GaAs FET HEMT Chips

    Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
    Text: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and


    Original     		PDF

    TRANSISTOR C815

    Abstract: equivalent transistor C5001 ATF-58143 AV02-0913EN ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S
    Text: ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the ­active device. Low cost field ­effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure 0.6


    Original     		PDF ATF-58143 900MHz ATF-58143 AN-1281: ATF54143 5989-9554EN AV02-0913EN TRANSISTOR C815 equivalent transistor C5001 ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S

    equivalent transistor C5001

    Abstract: C5001 transistor c815 transistor transistor c815 ATF581433 ATF-58143 transistor C633 ATF58143 LL1005-FH2N2S TRANSISTORS BJT list
    Text: Agilent ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures


    Original     		PDF ATF-58143 ATF-58143 MTT-28, AN-1281: ATF-54143 AN-1222: equivalent transistor C5001 C5001 transistor c815 transistor transistor c815 ATF581433 transistor C633 ATF58143 LL1005-FH2N2S TRANSISTORS BJT list

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


    Original     		PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet March 19, 2001 DC-18GHz MPA with AGC TGA1328-SCC OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW


    Original     		PDF DC-18GHz OC-192 TGA1328-SCC 14GHz -18GHz TGA1328-SCC 25dBm. 18GHz. 0007-inch

    DC-10

    Abstract: OC192 TGA1328-SCC TGA8652-EPU
    Text: Product Data Sheet March 19, 2002 DC-18GHz MPA with AGC TGA1328-SCC OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW


    Original     		PDF DC-18GHz TGA1328-SCC OC-192 14GHz -18GHz TGA1328-SCC 25dBm. 0007-inch DC-10 OC192 TGA8652-EPU

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet February 14, 2008 DC-18GHz MPA with AGC TGA1328-SCC OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW


    Original     		PDF DC-18GHz TGA1328-SCC OC-192 14GHz -18GHz 10GHz TGA1328-SCC 0007-inch

    BB0502X7R104M16VNT9820

    Abstract: DC TO 18GHZ RF AMPLIFIER MMIC Presidio CERAMIC CAP 10ghz optical modulator driver GaAs pHEMT MMIC medium power amplifier 0603YC103KAT DC-10 OC192 TGA1328-SCC TGA8652-EPU
    Text: Product Data Sheet February 14, 2008 DC-18GHz MPA with AGC TGA1328-SCC OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW


    Original     		PDF DC-18GHz TGA1328-SCC OC-192 14GHz -18GHz 10GHz TGA1328-SCC 0007-inch BB0502X7R104M16VNT9820 DC TO 18GHZ RF AMPLIFIER MMIC Presidio CERAMIC CAP 10ghz optical modulator driver GaAs pHEMT MMIC medium power amplifier 0603YC103KAT DC-10 OC192 TGA8652-EPU

    10ghz optical modulator driver

    Abstract: DC TO 18GHZ RF AMPLIFIER MMIC DC-10 OC192 TGA1328-SCC TGA8652-EPU
    Text: Product Data Sheet January 24, 2005 DC-18GHz MPA with AGC TGA1328-SCC OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW


    Original     		PDF DC-18GHz TGA1328-SCC OC-192 14GHz -18GHz 10GHz TGA1328-SCC 0007-inch 200vC. 10ghz optical modulator driver DC TO 18GHZ RF AMPLIFIER MMIC DC-10 OC192 TGA8652-EPU

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


    Original     		PDF 3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"

    TGA1328

    Abstract: 6 9dg TGA1328EPU
    Text: Advance Product Datasheet January 18. 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW


    Original     		PDF DC-18GHz OC-192 TGA1328-EPU 14GHz TGA1328EPU 0007-inch TGA1328 6 9dg

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Datasheet June 7, 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW


    Original     		PDF DC-18GHz OC-192 TGA1328-EPU 14GHz TGA1328EPU 0007-inch

    DC TO 18GHZ RF AMPLIFIER MMIC

    Abstract: 6 9dg OC192
    Text: Advance Product Datasheet July 30, 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW


    Original     		PDF DC-18GHz TGA1328-EPU OC-192 14GHz TGA1328EPU 0007-inch DC TO 18GHZ RF AMPLIFIER MMIC 6 9dg OC192

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    HMF-03100-200

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC Œ HARFUS hOZ D TTbmME D D llflS S H M F -0 3 1 10 243 -200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +19 dBm Output Power with 8.5 dB Associated Gain at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers


    OCR Scan     		PDF HMF-03110-200 HMF03100-200. ga158 HMF-03100-200

    HMF-03100-200

    Abstract: Harris 721
    Text: HARRIS niil SEMICONDUCTOR JE HARRIS MbE • J> HSOESb'i D 0 0 0 n 3 7 J Ê H M F -0 3 1 10 Gain Optimized GaAs FET PRODUCT DATA 2 -1 4 G H z Features • +19 dBm Output Power with 8.5 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers


    OCR Scan     		PDF HMF-03110-200 HMF03100-200. HMF-03100-200 Harris 721

    SMF12000-200

    Abstract: No abstract text available
    Text: SMF-12020 ELECTRO NICS Sam sung M icrow ave Sem iconductor P O W G I* O p t i m i z e d GaAs FET 2-12 GHz Description Features The SMF-12020-200 is a packaged version of the SMF12000-200. The chip is a 1200 jam n-channel MESFET with 0.5 p.m gate length, utilizing Samsung Microwave’s power


    OCR Scan     		PDF SMF-12020 SMF-12020-200 SMF12000-200. SMF-12000-200 SMF12000-200

    Untitled

    Abstract: No abstract text available
    Text: S M ELECTRONICS Samsung Microwave Semiconductor F - 0 3 1 1 0 G a in O p t Ì lT I Ì Z G C l GaAs FET 2-14 GHz Description Features The SM F-03110-200 is a packaged version of the SMF03100-200. The chip is a 300 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain


    OCR Scan     		PDF F-03110-200 SMF03100-200. SMF-03100-200 G0171Sfl

    Untitled

    Abstract: No abstract text available
    Text: Power Amplifier TGA8041-XCC I 6.5 to 18-GHz Frequency Range 0.4-W Output Power at 1-dB Gain Compression 10.5-dB Typical Gain Operates From Single 8 V Supply 13% Typical Power-Added Efficiency at 1-dB Gain Compression 3,6068 x 1,9304 x 0,1016 mm 0.142 x 0.076 x 0.004 in.


    OCR Scan     		PDF TGA8041-XCC 18-GHz TGA8041-XCC 18-GHz. 26-dBm

    Untitled

    Abstract: No abstract text available
    Text: Power Amplifier TGA8041-XCC 6.5 to 18-GHz Frequency Range 0.4-W Output Power at 1-dB Gain Compression 10.5-dB Typical Gain Operates From Single 8 V Supply 13% Typical Power-Added Efficiency at 1-dB Gain Compression 3,6068 x 1,9304 x 0,1016 mm 0.142 x 0.076 x 0.004 in.


    OCR Scan     		PDF TGA8041-XCC 18-GHz TGA8041-XCC 18-GHz. 26-dBm

    Untitled

    Abstract: No abstract text available
    Text: TGA8041-XCC 6.5- TO 18-GHz POWER AMPLIFIER A PP R O V AL 5026 0.4-W Output Power at 1-dB Gain Compression 10.5-dB Typical Gain Operates From Single 8-V Supply 13% Typical Power-Added Efficiency at 1-dB Gain Compression Size: 3,6068 x 1,9304 x 0,1016 mm 0.142 x 0.076 x 0.004 inch


    OCR Scan     		PDF TGA8041-XCC 18-GHz 26-dBm TGA8041

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    54200

    Abstract: No abstract text available
    Text: VOLTAGE CONTROLLED OSCILLATORS MLO 50000 Series BROADBAND VOLTAGE CONTROLLED OSCILLATORS 0.5 TO 20 GHz FEATURES ♦ Broadband Frequency Ranges ♦ Fast Tuning Speed ♦ Low Tuning Voltage ♦ High Output Power ♦ High Reliability DESCRIPTION M /A-COM Ltd's range of broadband voltage controlled oscillators VCOs offers excellent tuning characteristics over


    OCR Scan     		PDF 20GHz. DS92-2C 54200