HMF06300
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC S HARRIS PRODUCT DATA bOE » • TTbMlME Qailfl37 226 ■ ■ SMGK HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features * High Transconductance, especially for Feedback Amplifier Designs * Large Cross Section Ti/Pt/Au Gates
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Qailfl37
HMF-06300
HMF06300
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 2 j HARRIS PRODUCT DATA bOE D • 7^^4142 OGllflEb 442 ■ SMGK HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability
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HMF-03300
HMF-03300
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC J*j HARRIS LOE D • 7 ^ 4 1 4 2 GGllflMb E3G ■ SHGK HMF-24000 100 -,200 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +30.5 dBm Output Power -200 with 5.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates
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HMF-24000
Th680
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HMF-03100
Abstract: HMF03100 HMF-03100-100 HMF-03100-300 samsung 943
Text: SAMSUNG ELECTRONICS INC 2j HARRIS bDE ]> • TTbMlMS 0D11Ö22 ÖT7 ■ SM6K H M F -03100 -1 0 0 -200 -3 0 0 Gain Optimized GaAs FET 2-2 0 GHz PRODUCT DATA Features • +15, +19 and +21 dBm Output Power Selections Available Large Cross Section Ti/Pt/Au Gates
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"Harris microwave"
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC S HARRIS bDE D 7 ^ 4 1 4 2 Güllfin E DE HMF-03000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8.5 dB Associated Gain at 8 GHz • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability
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HMF-03000
HMF-03000
"Harris microwave"
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LDS 4201
Abstract: No abstract text available
Text: HARRI S 4bE MU SEMICONDUCTOR D • 43052^ D0D0177 ‘ì ■ T ^ - 2 > \ - 3 lS ~ HARRIS HM F-12 1 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • 8.5 dB Gain MSG with + 22 dBm Associated Output power at 18 GHz * Large Cross Section Ti/Pt/Au Gates
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D0D0177
LDS 4201
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50LD
Abstract: sn 1699
Text: SAHSUNG ELECTRONICS INC [Jj HARRIS bOE D • ? 1 b m M 2 0011SM3 SSI H M F -12100 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features * 8.5 dB Gain MSG with + 22 dBm Associated Output power at 18 GHz • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability
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0011SM3
HMF-1219
50LD
sn 1699
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a dbm hmf no
Abstract: No abstract text available
Text: HARRIS Mül SEMICONDUCTOR r r HARRIS 4hE D 1 • HMS H3DSEbT D 0 0 01 7 3 HMF-12000 -100 -200 Power Optimized GaAs FET 2-16 GHz PRODUCT DATA Features • +27.5 dBm Output Power -200) with 7.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates
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HMF-12000
a dbm hmf no
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HMF06100
Abstract: "Harris microwave"
Text: SAMSUNG ELECTRONICS bGE INC £0 HARRIS H 7 % 4 1 4 2 0011833 bfl2 D M F - 6 1 -1 0 0 -2 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for S/X Band and Ku Band Applications Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability
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HMF-03000
Abstract: No abstract text available
Text: HARRIS Mil SEMICONDUCTOR 23 HARRIS 4bE » • 4 3 Q E 2 t . cl O Q Q Q l ^ 4 ■ T -3 1 -3 5 HMF-03000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates
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43QE2t
HMF-03000
HMF-03000
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HMF-03300
Abstract: HMF0330 GAAS FET CROSS REFERENCE
Text: HARRIS MU S E M I C O N D U C T O R HARRIS PRODUCT DATA MbE D • 430221^ GGG0157 3 ■ HMS HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates
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GGG0157
HMF-03300
HMF-03300
HMF0330
GAAS FET CROSS REFERENCE
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Untitled
Abstract: No abstract text available
Text: HARRIS Mill SEMICONDUCTOR MbE D • 1302Sfa1 0 0 0 0 1 5 3 " T 2 j HARRIS - 3 t | - 3 S H M F -03100 -1 0 0 -200 -3 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features * +15, +19 and +21 dBm Output Power Selections Available * Large Cross Section Ti/Pt/Au Gates
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1302Sfa1
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Untitled
Abstract: No abstract text available
Text: SAMSUNG E LE C TR O N IC S IN C bGE ]> • 7Sbm 4E D G llfiM D HABRI8 HMF-12000 Û1E -1 0 0 -20 0 Power Optimized GaAs FET 2-16 GHz PRODUCT DATA Features • +27.5 dBm Output Power -200 with 7.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates
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HMF-12000
Re-pro34
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HMF-0600
Abstract: HMF-06000
Text: S A M S U N G E L E C T R O N I C S INC 33 HARRIS bDE J> 7^4142 0G11Ô3D T73 HMF-06000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features * +24.5 dBm Output Power with 8 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability
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HMF-06000
HMF-06000
HMF-0600
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HMF-06100
Abstract: HMF06100
Text: HARRIS Mill S E M I C O N D U C T O R 4bE D • 43022^ OGGOlbS 2 ■ HMS -1 0 0 2 J H A R R I S H M F - 6 1 -200 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for SIX Band and Ku Band Applications * Large Cross Section Ti/Pt/Au Gates
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HMF-06100
HMF06100
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HMF-24000-200
Abstract: No abstract text available
Text: HARRIS ¿ 2 flu S E M I C O N D U C T O R H A R R I S 4bE » • 43022^ OOGQlfll □ « H M S H MF-2 4 0 0 G 100 -2 0 0 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +30.5 dBm Output Power -200 with 5.5 dB Associated Gain at 8 GHz • Large Cross Section Ti/Pt/Au Gates
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Optimiz80
HMF-24000-200
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Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets
Abstract: No abstract text available
Text: Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets Mike Sun and Pete Zampardi Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 Over the past decade, III-V devices, and modules containing them, have dominated the market for RF front end
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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b1415
Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Text: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs
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RTC/5/01/PSINTRO
24-hour
200oC,
275oC
b1415
GAAS FET CROSS REFERENCE
gaas fet 70 mil micro-X Package
power fet 70 mil micro-X Package
EPA240BV
N5 micro-X Package
EPA060B-70
MIXER EMA
0.5w ,GaAs FET
EPA480C-SOT89
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IC 4047
Abstract: GAAS FET rf switch CROSS REFERENCE 0.5 mm pitch mlp 16 pin ceramic attenuator MHz diode EGP 30 data sheet of IC 4047 Driver IC 4047 GAAS FET CROSS REFERENCE HP MMIC ic 4047 datasheet
Text: PRODUCT FEATURE RF DIGITAL ATTENUATORS IN PLASTIC MLP PACKAGES B Fig. 1 Relative sizes of the five-bit and six-bit attenuators. ▼ roadband digital attenuators have been used to set power levels in RF and microwave circuits for many years. The concept is to electronically switch resistive T
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AT90XXXX)
AT90XXXX-TB)
AT90-0001
IC 4047
GAAS FET rf switch CROSS REFERENCE
0.5 mm pitch mlp 16 pin
ceramic attenuator MHz
diode EGP 30
data sheet of IC 4047
Driver IC 4047
GAAS FET CROSS REFERENCE
HP MMIC
ic 4047 datasheet
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NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
NE800296
NE800196
NE24406
diode deg avalanche zo 150 63
SK3448
ne8002
NE868199
shockley diode
NE800495-4
shockley diode application
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NE800296
Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
24-Hour
NE800296
diode deg avalanche zo 150 63
NE72089
ne8002
SK3448
universal jfet biasing curve graph
gunn diode ghz s-parameter
NE800196
impatt diode
NE800495-4
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lcd cross reference
Abstract: capacitor cross reference ADC-7109 SP232CP digital thermometer using dmm and ic lm35 MC14433P processor cross reference SI7660CJ 7660 harris TC4422
Text: Selection Guide January 1998 Update , Plants and Offices Established in December of 1993, TelCom Semiconductor, Inc. is a worldwide manufacturer of semiconductor devices, with a dedicated wafer manufacturing facility in Mountain View, California and a testing plant in Hong Kong.
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D-82152
lcd cross reference
capacitor cross reference
ADC-7109
SP232CP
digital thermometer using dmm and ic lm35
MC14433P
processor cross reference
SI7660CJ
7660 harris
TC4422
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oki cross
Abstract: GAAS FET CROSS REFERENCE DC-10 GHAD4102 GHAD4103 GHAD4108 GHDD4411 GHDD4414 KGL4115F KGL4201
Text: DATA SHEET O K I G a A s P R O D U C T S GHAD4102/4103/4108 and KGL4115F 10-Gbps GaAs Optical Communications Family April 1999 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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GHAD4102/4103/4108
KGL4115F
10-Gbps
GHAD4102
GHAD4103
1-800-OKI-6388
oki cross
GAAS FET CROSS REFERENCE
DC-10
GHAD4102
GHAD4103
GHAD4108
GHDD4411
GHDD4414
KGL4115F
KGL4201
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