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    GAAS FET OPERATING JUNCTION TEMPERATURE Search Results

    GAAS FET OPERATING JUNCTION TEMPERATURE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    GAAS FET OPERATING JUNCTION TEMPERATURE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    power Junction FET advantages and disadvantages

    Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor


    Original     		ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet PDF

    FR4 Prepreg for RF 06 layer PCB

    Abstract: Ablestik 84-1 lmis N4000-13 ablestik ablebond TRF1123 TRF1223 C001 ablebond ablestik m0021
    Text: Application Report SLWA038 – June 2005 Junction Temperature of TRF1123/TRF1223 and Recommended PCB Layout Guidelines Tim McGovern . Wireless Infrastructure - Radio ABSTRACT


    Original     		SLWA038 TRF1123/TRF1223 TRF1123 TRF1223. FR4 Prepreg for RF 06 layer PCB Ablestik 84-1 lmis N4000-13 ablestik ablebond TRF1223 C001 ablebond ablestik m0021 PDF

    high frequency transistor ga as fet

    Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
    Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


    Original     		ATP-1054, 5963-2025E 5966-0779E high frequency transistor ga as fet ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter PDF

    high power FET transistor s-parameters

    Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
    Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


    Original     		ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET PDF

    P012

    Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
    Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		P0120008P 43dBm OT-89 P0120008P P012 ISO-14001 KP028J RR0816 marking c7 sot-89 PDF

    P0110009P

    Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
    Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		P0120009P 48dBm OT-89 P0120009P P0110009P Susumu RL series part Marking KP029J RR0816 marking c7 sot-89 PDF

    fet 741

    Abstract: P0110002P KP022J P0120002P RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate
    Text: Technical Note P0120002P 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)


    Original     		P0120002P 250mW 41dBm OT-89 P0120002P fet 741 P0110002P KP022J RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate PDF

    KP027J

    Abstract: P0120007P RR0816
    Text: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		P0120007P 250mW 41dBm OT-89 P0120007P KP027J RR0816 PDF

    P0110003P

    Abstract: P0120003P ISO-14001 KP023J RR0816 GaAS fet sot89
    Text: P0120003P Technical Note 800mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +27 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		P0120003P 800mW 43dBm OT-89 P0120003P P0110003P ISO-14001 KP023J RR0816 GaAS fet sot89 PDF

    eudyna transistors catalog

    Abstract: ISO-14001 KP024J P0120004P RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028
    Text: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package


    Original     		P0120004P 45dBm OT-89 P0120004P eudyna transistors catalog ISO-14001 KP024J RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028 PDF

    P0110009P

    Abstract: gaas fet marking a ISO-14001 KP029J P0120009P RR0816 48dBm High power fet 2.4ghz
    Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package


    Original     		P0120009P 48dBm OT-89 17GHz KP029J P0120009P P0110009P gaas fet marking a ISO-14001 KP029J RR0816 48dBm High power fet 2.4ghz PDF

    sumitomo 131 datasheet

    Abstract: DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J P0120008P RR0816
    Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package


    Original     		P0120008P 43dBm OT-89 17GHz KP028J P0120008P sumitomo 131 datasheet DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J RR0816 PDF

    ml marking sot 89

    Abstract: bc 339 DC 8881 ml marking ISO-14001 KP024J P0120003P P0120004P RR0816 IDS400
    Text: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package


    Original     		P0120004P 45dBm OT-89 17GHz KP024J P0120004P ml marking sot 89 bc 339 DC 8881 ml marking ISO-14001 KP024J P0120003P RR0816 IDS400 PDF

    DC 8881

    Abstract: umt1n applications P0110003P ml marking ml marking sot 89 ISO-14001 KP023J P0120003P RR0816 GaAS fet sot89
    Text: P0120003P Technical Note 800mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +27 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package


    Original     		P0120003P 800mW 43dBm OT-89 17GHz KP023J P0120003P DC 8881 umt1n applications P0110003P ml marking ml marking sot 89 ISO-14001 KP023J RR0816 GaAS fet sot89 PDF

    sumitomo 131 datasheet

    Abstract: P0120002P ml marking sot 89 ISO-14001 KP022J RR0816 marking c7 sot-89 P0110002P
    Text: P0120002P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)


    Original     		P0120002P 250mW 41dBm OT-89 17GHz KP022J P012rally, sumitomo 131 datasheet P0120002P ml marking sot 89 ISO-14001 KP022J RR0816 marking c7 sot-89 P0110002P PDF

    GaAs FET operating junction temperature

    Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .


    Original     		ED-19, 5966-3084E GaAs FET operating junction temperature 5257 transistor chip die hp transistor HP transistor cross reference mtt2 PDF

    A2732

    Abstract: AN1030 nec calculator chips
    Text: California Eastern Laboratories APPLICATION NOTE AN1030 Microwave Power GaAs Device Thermal Resistance Basics 1-INTRODUCTION 2-DEFINITION OF THERMAL IMPEDANCE RTH The operating temperature of GaAs power devices affects their reliability and RF performance. Since the majority of


    Original     		AN1030 A2732 AN1030 nec calculator chips PDF

    A2732

    Abstract: AN1032
    Text: California Eastern Laboratories APPLICATION NOTE AN1032 Microwave Power GaAs Device Thermal Resistance Basics 1-INTRODUCTION 2-DEFINITION OF THERMAL IMPEDANCE RTH The operating temperature of GaAs power devices affects their reliability and RF performance. Since the majority of


    Original     		AN1032 A2732 AN1032 PDF

    SPF-3143

    Abstract: sot-343 as DC-10 DC bias of gaas FET SOT343 lna
    Text: Preliminary Preliminary Product Description Sirenza Microdevices’ SPF-3143 is a high performance 0.5µm pHEMT Gallium Arsenide FET. This 600µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device can


    Original     		SPF-3143 31dBm. DC-10 EDS-103162 sot-343 as DC bias of gaas FET SOT343 lna PDF

    GaAsTEK

    Abstract: No abstract text available
    Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply


    OCR Scan     		ITT6401D ITT6401D loQ-360mA GaAsTEK PDF

    F31Z

    Abstract: SPF-3143Z GaAs FET operating junction temperature SPF3143Z SPF-3143
    Text: SPF-3143Z Product Description Product Features • Available in Lead free, RoHS compliant, & Green packaging • DC-3.5 GHz Operation • 0.58 dB NFMIN @ 2 GHz • 21 dB GMAX @ 2 GHz • +31 dBm OIP3 5V,40mA • +17.7 dBm P1dB (5V,40mA) • Low Current, Low Cost


    Original     		SPF-3143Z SPF-3143Z EDS-103162 F31Z GaAs FET operating junction temperature SPF3143Z SPF-3143 PDF

    Untitled

    Abstract: No abstract text available
    Text: AdvancedPreliminary Information Product Description Sirenza Microdevices’ SPF-3143 is a high performance 0.5µm pHEMT Gallium Arsenide FET. This 600µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device can


    Original     		SPF-3143 31dBm. SPF-3143 DC-10 EDS-103162 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM / [ FEATURES r> \ j Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 £2 Input/Output Impedance Self-Aligned MSAG MESFET Process


    OCR Scan     		ITT6401FM ITT6401FM 360mA PDF

    F31Z

    Abstract: SPF-3143Z SPF-3143 SPF3143Z ZL 264 OIP35
    Text: SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-343 Product Description Features „ DC to 3.5 GHz Operation „ 0.58 dB NFMIN at 2 GHz „ 21 dB GMAX at 2 GHz „ + 31 dBm OIP3 5 V,40 mA


    Original     		SPF-3143Z OT-343 SPF-3143Z EDS-103162 F31Z SPF-3143 SPF3143Z ZL 264 OIP35 PDF