104780 0
Abstract: HWL26NPB
Text: HWL26NPB L-Band GaAs Power FET Autumn 2002 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Outline Dimensions Applications • High Efficiency • 3V to 6V Operation 1 Description Pin 1: Source Pin 2: Gate Pin 3: Drain The HWL26NPB is a medium Power GaAs FET using
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HWL26NPB
HWL26NPB
104780 0
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Untitled
Abstract: No abstract text available
Text: HWL27NPB L-Band GaAs Power FET Autumn 2002 V1 Features Outline Dimensions • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain 2 3 Description The HWL27NPB is a medium Power GaAs FET using
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HWL27NPB
HWL27NPB
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GaAs fet sot23
Abstract: fet 4901 HWL23NPB PT 3195 FET 3360 7334
Text: HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Outline Dimensions Applications • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description
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HWL23NPB
HWL23NPB
GaAs fet sot23
fet 4901
PT 3195
FET 3360
7334
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Untitled
Abstract: No abstract text available
Text: HWL27NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain 2 3 Description The HWL27NPB is a medium Power GaAs FET using
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1234567849A7BCDEF7
HWL27NPB
HWL27NPB
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Untitled
Abstract: No abstract text available
Text: HWL26NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Outline Dimensions Applications • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description
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HWL26NPB
1234567849A7BCDEF7
HWL26NPB
OT-23)
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Untitled
Abstract: No abstract text available
Text: HWL23NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Outline Dimensions Applications • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description
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HWL23NPB
1234567849A7BCDEF7
HWL23NPB
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2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The
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P10100EJ6V0SG00
2SK2396A
NEC 2SK2396A
k2396a
pc1658
2SC2407
P10100EJ6V0SG00
UAA 1006
k2396
K2597
Marking Code SAW MOS transistor
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AF002C4-39LF
Abstract: AF002C1-39 AF002C1-39LF AF002C4-39
Text: DATA SHEET AF002C1-39, AF002C1-39LF, AF002C4-39, AF002C4-39LF: GaAs IC Control FET Series 300 kHz–2.5 GHz Pin Out Features ● Drain D Source (S) ● 2 1 Low-cost SOT-23 package Series or shunt configuration ● Low DC current drain ● Ideal switch building blocks
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AF002C1-39,
AF002C1-39LF,
AF002C4-39,
AF002C4-39LF:
OT-23
J-STD-020
AF002C4-39LF
AF002C1-39
AF002C1-39LF
AF002C4-39
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RF mixer L-Band
Abstract: T4 3570 KGF1531P t4 and 3570 9746 using 7910 im3 GC510 Z0100 3570 1321
Text: ODRKGF1531P-01 Electronic Components KGF1531P Issue Date:Sep 30, 2003 Dual Gate IC GENERAL DESCRIPTION The KGF1531P is a high-performance GaAs FET small-signal dual gate mixer for the L-band frequencies that feature features low voltage operation, low current operation, high conversion gain, and low distortion. The
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ODRKGF1531P-01
KGF1531P
KGF1531P
RF mixer L-Band
T4 3570
t4 and 3570
9746
using 7910 im3
GC510
Z0100
3570 1321
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Untitled
Abstract: No abstract text available
Text: DATA SHEET AF002C1-39, AF002C1-39LF, AF002C4-39, AF002C4-39LF: GaAs IC Control FET Series 300 kHz–2.5 GHz Pin Out Features ● Drain D Source (S) ● 2 1 Low cost SOT-23 package Series or shunt configuration ● Low DC current drain ● Ideal switch building blocks
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AF002C1-39,
AF002C1-39LF,
AF002C4-39,
AF002C4-39LF:
OT-23
J-STD-020
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Untitled
Abstract: No abstract text available
Text: DATA SHEET AF002C1-39, AF002C1-39LF, AF002C4-39, AF002C4-39LF: GaAs IC Control FET Series 300 kHz–2.5 GHz Pin Out Features ● Drain D Source (S) ● 2 1 Low-cost SOT-23 package Series or shunt configuration ● Low DC current drain ● Ideal switch building blocks
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AF002C1-39,
AF002C1-39LF,
AF002C4-39,
AF002C4-39LF:
OT-23
J-STD-020
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Untitled
Abstract: No abstract text available
Text: GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 Features SOT-23 • Low Cost SOT-23 Package 0.120 3.05 mm 0.110 (2.79 mm) ■ Series or Shunt Configuration ■ Low DC Current Drain 0.018 (0.45 mm) 0.015 (0.38 mm) 3 0.055 (1.40 mm) 0.047 (1.19 mm)
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AF002C1-39,
AF002C4-39
OT-23
OT-23
12/02A
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AF002C4-39
Abstract: AF002C4 AF002C1-39 GaAs IC High Isolation Positive Control Switch
Text: GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 Features SOT-23 • Low Cost SOT-23 Package 0.120 3.05 mm 0.110 (2.79 mm) ■ Series or Shunt Configuration ■ Low DC Current Drain 0.018 (0.45 mm) 0.015 (0.38 mm) 3 0.055 (1.40 mm) 0.047 (1.19 mm)
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AF002C1-39,
AF002C4-39
OT-23
OT-23
12/02A
AF002C4-39
AF002C4
AF002C1-39
GaAs IC High Isolation Positive Control Switch
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GaAs fet sot23
Abstract: GaAs IC High Isolation Positive Control Switch
Text: GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 Features SOT-23 • Low Cost SOT-23 Package 0.120 3.05 mm 0.110 (2.79 mm) ■ Series or Shunt Configuration ■ Low DC Current Drain 0.018 (0.45 mm) 0.015 (0.38 mm) 3 0.055 (1.40 mm) 0.047 (1.19 mm)
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AF002C1-39,
AF002C4-39
OT-23
OT-23
3/99A
GaAs fet sot23
GaAs IC High Isolation Positive Control Switch
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ku-band pll lnb
Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)
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11a/b/g
AV00-0061EN
AV00-0116EN
ku-band pll lnb
MGA-68563
mga-62563
MMIC SOT 363
HP 5082-3081
ATF-36077
5Ghz lna transistor datasheet
schottky diode 3 lead
ATF-511P8
power fet 70 mil micro-X Package
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ISDB-t modulator
Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)
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11a/b/g
AV00-0116EN
AV00-0141EN
ISDB-t modulator
ku-band pll lnb
HP 5082-3081
MMIC SOT 363
power fet 70 mil micro-X Package
VCO 9GHZ 10GHZ
MGA-30116
mga-62563
mga 51563
MGA-30316
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2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
Text: guide HP Wireless Communications Products, Markets Part-to-Market Quick Guide, Version 4.0 Table of Contents Abbreviations of Wireless Terms . i Receivers, Transmitters Receivers . 1
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5965-7732E
5968-2348E
2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
8 pin IC 34063
44xx
INA-10386
HP RF TRANSISTOR GUIDE
ATF 26886
2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM
Rf detector HSMS 8202
ina series
305xx
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Untitled
Abstract: No abstract text available
Text: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz • Multi-antenna
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BRO378-12B
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6681 - 250
Abstract: 2686 0112
Text: HEXAWAVE HWL27NPB Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL27NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
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HWL27NPB
HWL27NPB
200mA
6681 - 250
2686 0112
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PH 0852
Abstract: No abstract text available
Text: M L HEXAWAVE HWL26NPB Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
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HWL26NPB
110mA
PH 0852
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AF002C4
Abstract: AF002C1
Text: GaAs 1C Control FET Series DC-2.5 GHz EBAlpha AF002C1-39, AF002C4-39 Features SOT-23 • Low Cost SOT-23 Package 0.120 3.05 mm 0.110(2.79 mm) ■ Series or Shunt Configuration ■ Low DC Current Drain 0.018 (0.45 mm) 3 p - 0.015 (0.38 mm) M . 0.055 (1.40 mm) F
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OT-23
AF002C1-39,
AF002C4-39
OT-23
3/98A
AF002C4
AF002C1
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Untitled
Abstract: No abstract text available
Text: GaAs 1C Control FET Series DC-2.5 GHz ESAlpha AF002C1-39, AF002C4-39 Features 90T-23 • Low Cost SOT-23 Package 0.120 3.05 mm 0.110 (2.79 mm] ■ Series or Shunt Configuration 0.018 (0.45 mm) 3 r " - 0.015 (0.38 mm] nr ■ Low DC Current Drain tr 0.055 (1.40 mm)
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AF002C1-39,
AF002C4-39
90T-23
OT-23
AF002C4-39
3/98A
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300 ohm 2 ghz Antenna
Abstract: High Power Antenna Switch AF002C1-39 AF002C4 mobile phone transmitter IC changeover switch mobile phone frequency receiver IC AF002C4-39 HIGH POWER ANTENNA SWITCH PIN DIODE
Text: GaAs 1C Control FET Series DC-2.5 GHz ESAlpha AF002C1-39, AF002C4-39 Features SOT-23 • Low Cost SOT-23 Package 0.120 3.05 mm 0.110 (2.79 mm] ■ Series or Shunt Configuration n ■ Low DC Current Drain a. 0.055 (1.40 mm) 0.047 (1.19 mm] ■ Ideal Switch Building Blocks
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AF002C1-39,
AF002C4-39
OT-23
3/98A
300 ohm 2 ghz Antenna
High Power Antenna Switch
AF002C1-39
AF002C4
mobile phone transmitter IC
changeover switch
mobile phone frequency receiver IC
AF002C4-39
HIGH POWER ANTENNA SWITCH PIN DIODE
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pin diode gamma detector
Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
Text: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6
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OT-23
OT-23
OT-143
MA4T6365XX
pin diode gamma detector
Tuning Varactors
UHF schottky diode
GaAs p-i-n diodes
RF limiter PIN diode
impatt diode
IMPATT
10 GHz gunn diode
6 GHz PIN diode
Microwave zero bias detector diodes
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