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    GAAS GUNN DIODE 24 Search Results

    GAAS GUNN DIODE 24 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GAAS GUNN DIODE 24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GUNN DIODE

    Abstract: radar gunn diode gunn diode radar Gunn Diode symbol Gunn Diode microwave transmitter gunn diode datasheet MWT-GK gunn diode oscillator GaAs Gunn Diode OUTPUT POWER OF A GUNN DIODE OSCILLATOR
    Text: MwT-GK K-band 18-26.5GHz Gunn Diode Preliminary Features: K-band (18-26.5 GHz) frequency source applications Excellent frequency chirp performance Pulsed or CW operation 20 years of proven performance & reliability Processed in MwT captive GaAs fab Available in packaged or die form


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    Gunn Diode symbol

    Abstract: 10 GHz gunn diode MA87849 OUTPUT POWER OF A GUNN DIODE OSCILLATOR CAPACITOR 1000 MICROFARAD Gunn Transceiver GaAs varactor diode GUNN Gunn oscillator GaAs 24150
    Text: Varactor Controlled Oscillator Transceiver MA87849 24.100 - 24.150 GHz V3.00 Features ● ● ● ● ● ● ● TUNING BIAS GUNN BIAS Low Cost Suitable for Use as the Transmit/Receive Module in Inexpensive Commercial/Industrial Microwave Radios Can be Used for FM/CW Applications in Range


    Original     		PDF MA87849 595/U WR-42 WR-42, UG-595/U Gunn Diode symbol 10 GHz gunn diode OUTPUT POWER OF A GUNN DIODE OSCILLATOR CAPACITOR 1000 MICROFARAD Gunn Transceiver GaAs varactor diode GUNN Gunn oscillator GaAs 24150

    x band gunn diode

    Abstract: 2.2 GHz local oscillator 10 GHz gunn diode gunn diodes
    Text: Varactor Controlled Local Oscillator/Mixer MA87882BM Assembly 20.59 - 24.21 GHz V3.00 Features ● ● ● ● ● ● ● ● ● IF OUTPUT SMA FEMALE 4.7 µF CAPACITOR Low Conversion Loss Small and Lightweight Low AM/FM Noise Electronic Tuning Allows Automatic Frequency


    Original     		PDF MA87882BM WR-42, UG-595/U x band gunn diode 2.2 GHz local oscillator 10 GHz gunn diode gunn diodes

    10 GHz gunn diode

    Abstract: MA87842 Gunn Diode symbol Gunn oscillator GaAs GaAs Gunn diode VCO
    Text: Varactor Controlled Oscillator 17.63 - 19.63 GHz MA87842 V3.00 Features ● ● ● ● Low Cost Small and Lightweight Low AM and FM Noise Electronic Tuning Allows AFC 19.05 0.750 MAX. (57.15) 2.25 GROUND GUNN BIAS VARACTOR BIAS #4-40 UNC 2B X 0.30 DP. MIN


    Original     		PDF MA87842 WR-42, UG-595/U 10 GHz gunn diode MA87842 Gunn Diode symbol Gunn oscillator GaAs GaAs Gunn diode VCO

    Untitled

    Abstract: No abstract text available
    Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 240 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description


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    Untitled

    Abstract: No abstract text available
    Text: 8091 Microwave Technology Training System with LVDAMMW LabVolt Series Datasheet Festo Didactic en 240 V - 50 Hz 02/2015 Microwave Technology Training System with LVDAM-MW, LabVolt Series, 8091 Table of Contents General Description


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    Microwave oscillator

    Abstract: microwave
    Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description


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    FMCW

    Abstract: No abstract text available
    Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 60 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description


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    gunn diode

    Abstract: No abstract text available
    Text: 8091 Microwave Technology Training System with LVDAMMW LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 02/2015 Microwave Technology Training System with LVDAM-MW, LabVolt Series, 8091 Table of Contents General Description


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    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    Gunn Diode

    Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
    Text: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property


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    Gunn Diode

    Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
    Text: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER


    OCR Scan     		PDF DA1304 DA1307 DA1321 DA1321-1 DA1338 DA1338-1 DA1338-2 DA1338-3 DA1349-2 DA1349-4 Gunn Diode Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor

    diode cross reference

    Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
    Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE


    OCR Scan     		PDF MA40401 MA40402 MA40404 MA40405 MA40406 MA40408 diode cross reference schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606

    RADIO TUNING DIODE

    Abstract: gunn diodes
    Text: an A M P com pany Varactor Controlled Local Oscillator/Mixer Assembly 20.59 - 24.21 GHz MA87882BM V3.00 Features • • • • • • • • • Low Conversion Loss Small and Lightweight Low AM/FM Noise Electronic Tuning Allows Automatic Frequency Control AFC


    OCR Scan     		PDF MA87882BM WR-42, UG-595/U RADIO TUNING DIODE gunn diodes

    Gunn Diode MA49156

    Abstract: GaAs Gunn Diode 24 gunn diodes Gunn Diode e band x band gunn diode X-band marine radar gunn diode x band radar Gunn Diode 72 GHz MA49172 MA49156
    Text: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is


    OCR Scan     		PDF MA49000 MA49000 Gunn Diode MA49156 GaAs Gunn Diode 24 gunn diodes Gunn Diode e band x band gunn diode X-band marine radar gunn diode x band radar Gunn Diode 72 GHz MA49172 MA49156

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID SbE D 5544200 ODDQMTb SÔD • LITT J Z - ([ ■ GUNN DIODES HIGH FREQUENCY 22 to 110 GHz FEATURES • • • • • • GaAs and InP Devices High Efficiency Low Package Parasitics High Reliability Low FM and AM Noise Good Power and Frequency Stability


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    Gunn Diode at power supply circuit

    Abstract: Gunn Diode microwave transmitter Gunn diode UG-595 GaAs Gunn Diode 24 10 GHz mixer diode ma87924 step recovery diode
    Text: an A M P com pany Microwave Transmitter VCO 17.70-19.70 GHz MA87924 V3.00 Features • Excellent Tuning Linearity • Small and Lightweight • Modulation and External AFC Control can be Commonly Applied to the Tuning Bias • ±0.055% Frequency vs. Temperature Stability


    OCR Scan     		PDF MA87924 Gunn Diode at power supply circuit Gunn Diode microwave transmitter Gunn diode UG-595 GaAs Gunn Diode 24 10 GHz mixer diode ma87924 step recovery diode

    pin diode gamma detector

    Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
    Text: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6


    OCR Scan     		PDF OT-23 OT-23 OT-143 MA4T6365XX pin diode gamma detector Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes

    2.4 ghz FM RECEIVER CIRCUIT DIAGRAM

    Abstract: Gunn oscillator InP gunn diode x band amplifier GaAs Gunn Diode "94 GHz" GaAs Gunn Diode 24 millimeter wave radar GaAs Gunn diode VCO x band diode detector waveguide microwave transceiver gunn diode x band radar
    Text: /yfoccm Millimeter Wave Subassemblies Overview Choice of Transmission Line Media F CUTPOT In millimeter wave Integrated circuit assemblies as in conventional integrated circuit assemblies, the choice of media is a major factor in terms of technical success and cost effectiveness.


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    millimeter wave radar

    Abstract: varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A
    Text: MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide


    OCR Scan     		PDF MA48700 and43 millimeter wave radar varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A

    NJS6928

    Abstract: NJS4310 NJS6317 NJS6930 NJT1946A NJX4410 NJX4415
    Text: MICROWAVE DEVICES, COMPONENTS & EQUIPMENTS HIGH POWER DIODE LIMITERS LENGTH MIC RADAR FRONT END MODULES TYPE IF PRBQHEKGYÍ BOISE RANGE FIGURE 60 MHz " " " 3dB 4.0 5.0 3.5 NJS4310 3000-3100MHz ” NJ24314 " NJT1307 NJT1946A 9300~9500MHz TYPE OPERATING VOLTAGE


    OCR Scan     		PDF NJS4310 NJ24314 NJT1307 NJT1946A 3000-3100MHz 9500MHz NJS6317 NJS6928 NJS6930 NJX4410 NJX4415

    Gunn Diode symbol

    Abstract: Gunn Diode impatt diagram of gunn diode 00Q13CH DVE6900 DIODE in 5060 GaAs Gunn Diode varactor alpha 2025 ct
    Text: ALPHA IND/ SEMICONDUCTOR MAE D • DSfiSHHB 00Q13CH ES2 * A L P High Q GaAs Tuning Diodes -T - C TM «t Features ■ ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types ■ ■ DVE4500 Series DVE6900 Series


    OCR Scan     		PDF 00Q13CH DVE4500 DVE6900 di4576 DVE4555 DVE6951 DVE6952 DVE6953 DVE6954 DVE6955 Gunn Diode symbol Gunn Diode impatt diagram of gunn diode DIODE in 5060 GaAs Gunn Diode varactor alpha 2025 ct

    tba 450

    Abstract: dc46a GUNN DIODE plessey
    Text: GEC PLESSEY SENICONDS PACKAGED DETECTOR MODULES 43E D • 3?t.asaa oaisabi m ■ plsb 'X -o'i-o 'j DB3031 Germanium Backward Diode Detector Modules • • • • • • 0-1-18 GHz frequency range High sensitivity at zero bias High dynamic range > 4 5 d B


    OCR Scan     		PDF DB3031 17dBmf 1-18GHz tba 450 dc46a GUNN DIODE plessey

    diagram of gunn diode

    Abstract: GUNN OSCILLATORS DVE4575 diodes tvb IMPATT
    Text: High Q GaAs Tuning Diodes Features • ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types -J* DVE4500 Series DVE6900 Series Description The Alpha line of gallium arsenide tuning diodes offers the circuit designer expanded capability. The


    OCR Scan     		PDF DVE4500 DVE6900 DVE6951 DVE6952 DVE6953 DVE6954 DVE6955 diagram of gunn diode GUNN OSCILLATORS DVE4575 diodes tvb IMPATT