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    GAAS HEMTS X BAND Search Results

    GAAS HEMTS X BAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-100P Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060-30 Rochester Electronics LLC CLF1G0060-30 - 30W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060S-10 Rochester Electronics LLC CLF1G0060S-10 - 10W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060-10 Rochester Electronics LLC CLF1G0060-10 - 10W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    TLC32044IFK Rochester Electronics LLC TLC32044 - Voice-Band Analog Interface Circuits Visit Rochester Electronics LLC Buy

    GAAS HEMTS X BAND Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TMD1414-2

    Abstract: TGM9398-25 8596-50
    Text: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3


    Original     		TPM2828-60â TPM1919-60 TPM2828-9â TMD0708-2 TMD0608-4 TMD7185-2 TMD5872-2 TMD1925-3 TMD1013-1-431 TMD0507-2A TMD1414-2 TGM9398-25 8596-50 PDF

    GaN amplifier

    Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
    Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		AN-013 AN-013: NPTB00004 12-Watt NPT25100 MRF6S9125 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation PDF

    CGH35015

    Abstract: energy efficient wide bandgap devices 12 VOLTS INVERTER CIRCUIT USING MOSFET Infineon CoolMOS SMPS CIRCUIT DIAGRAM USING TRANSISTORS HEMT difference between IGBT and MOSFET IN inverter SMPS research paper High Voltage RF LDMOS Technology for Broadcast Applications SiC MOSFET
    Text: Energy Efficient Wide Bandgap Devices John W. Palmour Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, USA Abstract. As wide bandgap devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption. For RF


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    X-band Gan Hemt

    Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
    Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2


    Original     		AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535 PDF

    microwave transistor bfy193

    Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420 PDF

    SIEMENS MICROWAVE RADIO 8 GHz

    Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


    Original     		MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING PDF

    FSX52WF

    Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
    Text: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5


    OCR Scan     		FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG PDF

    GaAs HEMTs X band

    Abstract: X-band Gan Hemt 0.18um AlGaN/GaN HEMTs x-band mmic lna alcon X-band diode gp 421 LNA x-band
    Text: High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, Cree Lighting Company, 340 Storke Road, Goleta, CA 93117. R. Neidhard, L. Kehias, T. Jenkins, Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433.


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    SiC-JFET

    Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
    Text: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise


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    TGI8596-50

    Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
    Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4


    Original     		MSE-2008 MSE-2009 TGI8596-50 TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL PDF

    7400A

    Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
    Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions


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    IG 057-2

    Abstract: No abstract text available
    Text: A m it s u b is h i MGFC4420D SERIES Die ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFC4420D Series super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in X to K band low noise amplifiers. These devices feature a 0.25 x 150|am "T"


    OCR Scan     		MGFC4420D 12GHz MGFC4424D: MGFC4427D: MGFC4420C MGFC4424D-02 MGFC4424D-03 MGFC4427D-03 IG 057-2 PDF

    High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

    Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
    Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and


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    transistor C1096

    Abstract: transistor C2271 c2271 transistor TRANSISTOR C1555 GaN ADS Gan hemt transistor x band c1096 CGH40010F CuMoCu GaAs HEMTs X band
    Text: WMC: Challenges in Model-Based HPA Design Application of Non-Linear Models in a range of challenging GaN HEMT Power Amplifier Designs Ray Pengelly, Brad Millon, Don Farrell, Bill Pribble and Simon Wood Cree Inc., Research Triangle Park, NC 27709 Outline • Attributes of GaN HEMTs


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    uv flame sensor

    Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
    Text: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor­


    OCR Scan     		2771J 161-IMO uv flame sensor thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J PDF

    Manufacturing Efficiency Improvement through MBE Recipe Optimization

    Abstract: No abstract text available
    Text: Manufacturing Efficiency Improvement through MBE Recipe Optimization Guoliang Zhou and Mark Borek Skyworks Solutions, Inc., 20 Sylvan Road, Woburn, MA 01801, Tel.781-376-3225, guoliang.zhou@skyworksinc.com Keywords: MBE, pHEMT, manufacturing efficiency, growth recipe


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    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


    Original     		3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz" PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 PDF

    CMPA2735075F

    Abstract: CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1
    Text: ADVANCED INFORMATION CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2735075F CMPA2735075F CMPA27 35075F CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1 PDF

    CMPA5585025D

    Abstract: No abstract text available
    Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		CMPA5585025D CMPA5585025D 38rolina, PDF

    RF3-50

    Abstract: POWER456
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F RF3-50 POWER456 PDF

    CMPA5585025D

    Abstract: vd2b
    Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		CMPA5585025D CMP5585025D CMPA5585025D vd2b PDF

    CMPA801B025D

    Abstract: No abstract text available
    Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		CMPA801B025D CMP801B025D CMPA801B025D PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon


    Original     		CMPA0060002D CMPA0060002D CMPA00 PDF