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    GAAS IMPATT DIODE Search Results

    GAAS IMPATT DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GAAS IMPATT DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs IMPATT DIODES TM MI5001 – MI5022 Features Specified High Output Power High DC to Microwave Efficiency For Pulsed and CW Applications Applications Oscillators Avionic Systems Electronic Warfare Systems Smart Antennas Description Microsemi’s GaAs IMPATT diodes are fabricated utilizing


    Original     		MI5001 MI5022 PDF

    impatt

    Abstract: impatt diode MI5022 impatt diode datasheet IMPATT-Diode
    Text: GaAs IMPATT DIODES TM MI5001 – MI5022 Features ● Specified High Output Power ● High DC to Microwave Efficiency ● For Pulsed and CW Applications Applications ● Oscillators ● Avionic Systems ● Electronic Warfare Systems ● Smart Antennas Description


    Original     		MI5001 MI5022 impatt impatt diode MI5022 impatt diode datasheet IMPATT-Diode PDF

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4 PDF

    impatt diode

    Abstract: impatt diode operation IMPATT GaAs impatt diode
    Text: M/A-COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION GaAs IMPATT DIODE SELECTION GUIDE PRODUCTS OPERATION Frequency Range GHz Case Style ODS # 0.5 CW IMPATTS PULSED IMPATT DIODES Minimum CW Output Power in Watts Min. Peak Pulse Power In Watts 1.0


    OCR Scan     		ODS-275 ODS-111 ODS-92 ODS-940 impatt diode impatt diode operation IMPATT GaAs impatt diode PDF

    impatt diode

    Abstract: IMPATT MA46045 radar impatt impatt diode operation MA46046 MA46019-MA46048 MA46019 MIL-STD-750 METHOD 1031 GaAs impatt diode
    Text: JVjfacßm MA46019-MA46048 Series High Power Pulsed GaAs IMPATT Diodes Features • HIGH PEAK OUTPUT 30W AT 9.0-10.0 GHz 12W AT 8.0-10.0 GHz 10W AT 5.5-17.5 GHz ■ HIGH EFFICIENCY — TYPICALLY 20% ■ BURNOUT RESISTANCE TO CIRCUIT MISMATCHES ■ HIGH RELIABILITY


    OCR Scan     		MA46019-MA46048 MA46045 MA46047 MA46019 MA46020 impatt diode IMPATT radar impatt impatt diode operation MA46046 MIL-STD-750 METHOD 1031 GaAs impatt diode PDF

    impatt diode

    Abstract: MA460 IMPATT GaAs impatt diode MA46019-MA46048 030NH MA46046 radar impatt MIL-STD-750 METHOD 1031 MA46019
    Text: MA46019-MA46048 Series High Power Pulsed GaAs IMPATT Diodes Features • HIGH PEAK OUTPUT 30W AT 9.0-10.0 GHz 12W AT 8.0-10.0 GHz 10W AT 5.5-17.5 GHz ■ HIGH EFFICIENCY — TYPICALLY 20% ■ BURNOUT RESISTANCE TO CIRCUIT MISMATCHES ■ HIGH RELIABILITY ■ HIGH & LOW DUTY CYCLE OPERATION


    OCR Scan     		MA46019-MA46048 impatt diode MA460 IMPATT GaAs impatt diode 030NH MA46046 radar impatt MIL-STD-750 METHOD 1031 MA46019 PDF

    diodes

    Abstract: em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes
    Text: M icro w ave S em ico nducto rs Contents PAGE Schottky Diodes Silicon Schottky Mixer Diodes . 404 Silicon Schottky Detector Diodes 408 Frequency Multiplier Diodes Silicon Step Recovery Diodes GaAs Multiplier Varactors Tuning Varactor Diodes Silicon Tuning Varactors


    OCR Scan     		426iplier diodes em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes PDF

    diode cross reference

    Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
    Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE


    OCR Scan     		MA40401 MA40402 MA40404 MA40405 MA40406 MA40408 diode cross reference schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606 PDF

    pin diode gamma detector

    Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
    Text: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6


    OCR Scan     		OT-23 OT-23 OT-143 MA4T6365XX pin diode gamma detector Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes PDF

    gunn diodes

    Abstract: AH443 GUNN impatt DH385 AH365 DH378 AH152 AH802 GaAs p-i-n diodes
    Text: DIODES SELECTION GUIDE P R O D U C T S REF. D E S C R IP T IO N AH152 to AH 169 GaAs Abrupt tuning Varactors AH202 to AH240 GaAs Hyperabrupt tuning Varactors AH365 to AH380 GaAs Gunn Diodes 18-26GHz AH443 to AH497 GaAs Gunn Diodes (9-18GHZ) AH501 to AH539


    OCR Scan     		AH152 18-26GHz) 9-18GHZ) 10-16GHz) 94GHz AH202 AH240 AH365 AH380 gunn diodes AH443 GUNN impatt DH385 DH378 AH802 GaAs p-i-n diodes PDF

    GaAs Gunn Diode

    Abstract: impatt APX378 GaAs
    Text: DIODES INDEX ♦ DIODES SELEC TIO N GUIDE .13 ♦ DIODES SCREENING P R O C E D U R E S . 15


    OCR Scan     		AH365. 380/AH AH802 AH901. AH904 AH720. AH741 AH750. AH771 AH152. GaAs Gunn Diode impatt APX378 GaAs PDF

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF


    OCR Scan     		554M5D0 000G503 N57/N58 PDF

    Diode LT 9250

    Abstract: LT 9250 0/Diode LT 9250
    Text: LITTON IND/LITTON SOLI» SbE D • SSMMSDG OODDSOG Ö31 ■ L I T T 7 - Ö / - Ö GALLIUM ARSENIDE CW IMPATT DIODES 9250 Series • • • • 5-21 GHz High C W Output Power High Efficiency— Typically 1 8 -2 0 % Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF


    OCR Scan     		-3-48UNC-2A Diode LT 9250 LT 9250 0/Diode LT 9250 PDF

    Gunn Diode symbol

    Abstract: Gunn Diode impatt diagram of gunn diode 00Q13CH DVE6900 DIODE in 5060 GaAs Gunn Diode varactor alpha 2025 ct
    Text: ALPHA IND/ SEMICONDUCTOR MAE D • DSfiSHHB 00Q13CH ES2 * A L P High Q GaAs Tuning Diodes -T - C TM «t Features ■ ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types ■ ■ DVE4500 Series DVE6900 Series


    OCR Scan     		00Q13CH DVE4500 DVE6900 di4576 DVE4555 DVE6951 DVE6952 DVE6953 DVE6954 DVE6955 Gunn Diode symbol Gunn Diode impatt diagram of gunn diode DIODE in 5060 GaAs Gunn Diode varactor alpha 2025 ct PDF

    diode Catalog

    Abstract: diagram of gunn diode GUNN OSCILLATORS Gunn Diode DVE4554 DVE6950 GaAs Gunn Diode 082001 varactor alpha impatt diode
    Text: , □3 D eT | 0 5 0 5 4 4 3 0585443 DOOOSOB 2 ALPHA IND/ | _ SEMICONDUCTOR 03E 00503 D I " 7 “ High-“Q ” GaAs 45 Volt Series Tuning Diodes Features • 100% Higher “ Q” Than Comparable Silicon Diodes • WirlfiTi ininn Ratio Wide Tuning High Reliability and Space Qualified


    OCR Scan     		D000S03 DVE6950 cavity-001 DSfl5443 0DDS04 D5A5443 diode Catalog diagram of gunn diode GUNN OSCILLATORS Gunn Diode DVE4554 GaAs Gunn Diode 082001 varactor alpha impatt diode PDF

    diagram of gunn diode

    Abstract: GUNN OSCILLATORS DVE4575 diodes tvb IMPATT
    Text: High Q GaAs Tuning Diodes Features • ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types -J* DVE4500 Series DVE6900 Series Description The Alpha line of gallium arsenide tuning diodes offers the circuit designer expanded capability. The


    OCR Scan     		DVE4500 DVE6900 DVE6951 DVE6952 DVE6953 DVE6954 DVE6955 diagram of gunn diode GUNN OSCILLATORS DVE4575 diodes tvb IMPATT PDF

    ML4554

    Abstract: impatt diode ML4557 IMPATT
    Text: ML 4000 SERIES HIGH Q GaAs ABRUPT JUNCTION TUNING VARACTOR DIODES The ML 4500 Series of gallium arsenide microwave tuning varactors is a family of abrupt junction devices featuring "Q factors" in excess of 4000. T his series is specifically designed for broadband high Q tuning perform ance from VHF to


    OCR Scan     		40GHz. ML4512 ML4513 ML4514 ML4515 ML4516 ML4517 ML4518 ML4519 ML4520 ML4554 impatt diode ML4557 IMPATT PDF

    IMPATT

    Abstract: diode gunn SA impatt diode
    Text: INTRO DUC TIO N TCS PROFILE L E A D E R S H IP It ha s b e e n 2 0 y e a rs s in c e T H O M S O N C S F S E M IC O N D U C T E U R S S P E C IF IQ U E S TC S m a nufa cture d its firs t G aA s FE T (Field E ffect T ransistor). T h rou ghou t this period, TCS


    OCR Scan     		PDF

    millimeter wave radar

    Abstract: varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A
    Text: MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide


    OCR Scan     		MA48700 and43 millimeter wave radar varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A PDF

    MICROWAVE ASSOCIATES

    Abstract: IMPATT
    Text: INTRODUCTION This catalog of microwave and RF semiconductor products from M/A-COM Burlington Semiconductor Operations represents more than 40 years of world leadership in supplying the industry with high performance, high quality semiconductor products. The technology


    OCR Scan     		PDF

    schematic WELDER

    Abstract: gold melting furnace ultrasonic bond
    Text: Bonding and Handling Procedures for Chip Devices DISCUSSION Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last few years. Today's circuit designer is faced with a multiplicity of alter­ natives in the selection of diodes and packaging with each


    OCR Scan     		OT-23 schematic WELDER gold melting furnace ultrasonic bond PDF

    Untitled

    Abstract: No abstract text available
    Text: Pgfltt G E C P L E S S E Y DS3410-1.2 DC4600/4700 Series GaAs HYPERABRUPT TUNING VARACTORS The introduction of hyperabrupt junction varactors brings the advantages of linear electronic tuning to the microwave circuit designer. GEC Plessy Semiconductors Microwave's


    OCR Scan     		DS3410-1 DC4600/4700 DC4600 andDC4700 PDF

    varactor diode capacitance measurement

    Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
    Text: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY


    OCR Scan     		t-07-11 MA48700 varactor diode capacitance measurement impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz Gunn Diode e band PDF

    GUNN DIODE plessey

    Abstract: E1018 impatt Gunn Diode plessey impatt DC4702-3 barrier varactor gunn diode oscillator DC4601-4 DC4602-3
    Text: 37tflSE2 0 0 1 8 5 7 0 1TE • P L S B Si GEC PLESSEY S E M I C O N D U C T O R S D S 3 4 1 0 - 1.2 DC4600/4700 Series GaAs HYPERABRUPT TUNING VARACTORS The introduction of hyperabrupt junction varactors brings the advantages of linear electronic tuning to the microwave


    OCR Scan     		37hflSSE DS3410-1 DC4600/4700 GUNN DIODE plessey E1018 impatt Gunn Diode plessey impatt DC4702-3 barrier varactor gunn diode oscillator DC4601-4 DC4602-3 PDF