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    GALLIUM NITRIDE Search Results

    GALLIUM NITRIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-200P Rochester Electronics Broadband RF power GaN HEMT Visit Rochester Electronics Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
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    GALLIUM NITRIDE Price and Stock

    ROHM Semiconductor GNP1070TC-ZE2

    GaN FETs DFN8X8 650V 20A GAN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI GNP1070TC-ZE2 Reel 250 50
    • 1 -
    • 10 -
    • 100 $5.26
    • 1000 $4.89
    • 10000 $4.79
    		Buy Now

    ROHM Semiconductor GNP1150TCA-ZE2

    GaN FETs DFN8X8 650V 11A GAN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI GNP1150TCA-ZE2 Reel 250 50
    • 1 -
    • 10 -
    • 100 $2.71
    • 1000 $2.43
    • 10000 $2.39
    		Buy Now

    ROHM Semiconductor GNP2070TD-ZTR

    GaN FETs TOLL8N 650V 27A HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI GNP2070TD-ZTR Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $6.16
    		Buy Now

    GALLIUM NITRIDE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pwm ne555

    Abstract: 555 timer NE555 PWM constant current circuit using 555 timer 555 pwm pwm 555 driver application PWM LED driver circuit with 555 timer PWM dimming circuit 200Hz PWM boost 555 timer output current
    Text: APPLICATION NOTES: Dimming InGaN LED Introduction: Indium gallium nitride InGaN, InxGa1-xN is a semiconductor material made of a mixture of gallium nitride (GaN) and indium nitride (InN). Indium gallium nitride is the light-emitting layer in modern blue, green and white LEDs and often grown on a


    Original     		PDF

    D10040230PH1

    Abstract: 550 mhz catv power doubler catv solution GaN amplifier SOT-115J
    Text: RFMD. Gallium Nitride CATV Transmission Solutions: Power Doubler Amplifier Modules The introduction of gallium arsenide GaAs technology in the 1990s provided evolutionary improvements to the distortion performance of the cable television (CATV) industry. Today,


    Original     		1990s OT-115J D10040230PH1 550 mhz catv power doubler catv solution GaN amplifier SOT-115J PDF

    Gan hemt transistor RFMD

    Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
    Text: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron


    Original     		RF393x RF3933 RF3934 Gan hemt transistor RFMD RF3932 HIGH POWER TRANSISTOR Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2560025F CMPA2560025F CMPA25 6002ree PDF

    CMPA2560025F

    Abstract: CMPA2560025F-TB
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB PDF

    CMPA2560025F

    Abstract: CMPA2560025F-TB JESD22 A114D
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2560025F CMPA2560025F CMPA25 60025F CMPA2560025F-TB JESD22 A114D PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2560025F CMPA2560025F CMPA25 60025F PDF

    CMPA2560025F

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2560025D CMP2560025D CMPA25 CMPA2560025D CMPA2560025F PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA0060002F CMPA0060002F PDF

    TBTH06M20

    Abstract: CMPA0060025F
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F TBTH06M20 PDF

    CMPA0060025F

    Abstract: RF-35-0100-CH CMPA0060025F-TB
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F RF-35-0100-CH CMPA0060025F-TB PDF

    CMPA0060025D

    Abstract: No abstract text available
    Text: CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA0060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA0060025D CMPA0060025D CMPA00 PDF

    CMPA2560025F

    Abstract: CMPA2560025F-TB c08bl242x
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB c08bl242x PDF

    x-Band Hemt Amplifier

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier PDF

    CMPA2735075F

    Abstract: No abstract text available
    Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2735075F CMPA2735075F CMPA27 35075F 78001e PDF

    CMPA2560025F

    Abstract: 920pF
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2560025F CMPA2560025F CMPA25 60025F 920pF PDF

    CMPA2060025D

    Abstract: No abstract text available
    Text: CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2060025D CMP2060025D CMPA20 CMPA2060025D PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2560025D CMP2560025D CMPA25 CMPA2560025D PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2735075F CMPA2735075F CMPA27 35075F PDF

    GaN TRANSISTOR

    Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt
    Text: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor


    Original     		RF393x simple40 GaN TRANSISTOR RF3932 rf3931 RF3934 RF3933 transistor hemt PDF

    CMPA2560025F

    Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA2560025D CMP2560025D CMPA25 CMPA2560025D PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF