A1933
Abstract: No abstract text available
Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB
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RF3932D
96mmx1
92mmx0
RF3932D
DS110224
A1933
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Untitled
Abstract: No abstract text available
Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB
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RF3932D
96mmx1
92mmx0
RF3932D
DS110520
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Untitled
Abstract: No abstract text available
Text: RF3932D RF3932D 60W GaN on SiC Power Amplifier Die Package: Die The RF3932D is a 48V, 60W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general
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RF3932D
RF3932D
49dBm
DS130906
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Untitled
Abstract: No abstract text available
Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB
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RF3932D
96mmx1
92mmx0
DS110520
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ATC100B680J
Abstract: No abstract text available
Text: RF3932 60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical
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RF3932
RF3932
DS120306
ATC100B680J
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RF3932
Abstract: GaN ADS EAR99
Text: RF3932 60W GaN WIDE-BAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=14dB at 2GHz 48 V Operation Typical Performance
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RF3932
EAR99
RF3932
75-j2
73-j2
220mA
DS101003
GaN ADS
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C12R1
Abstract: TRANSISTOR J427
Text: RF3932 60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical
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RF3932
RF3932
DS121207
C12R1
TRANSISTOR J427
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Untitled
Abstract: No abstract text available
Text: RF3932 60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical
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RF3932
RF3932
DS120406
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Untitled
Abstract: No abstract text available
Text: RF3932 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=14dB at 2GHz 48 V Operation Typical Performance
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RF3932
EAR99
RF3932
DS120202
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Untitled
Abstract: No abstract text available
Text: RF3932 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Flanged Ceramic Features Peak Power=60W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation RF IN
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RF3932
RF3932
DSB070829
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Untitled
Abstract: No abstract text available
Text: RF3932 RF3932 60W GaN Wideband Power Amplifier The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific /medical, and general purpose broadband amplifier
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RF3932
RF3932
DS130905
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Untitled
Abstract: No abstract text available
Text: RF3932 60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical
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RF3932
DS120406
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GaN TRANSISTOR
Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt
Text: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor
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RF393x
simple40
GaN TRANSISTOR
RF3932
rf3931
RF3934
RF3933
transistor hemt
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Gan hemt transistor RFMD
Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
Text: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron
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RF393x
RF3933
RF3934
Gan hemt transistor RFMD
RF3932
HIGH POWER TRANSISTOR
Gan transistor
rf3931
RF3930
GaN amplifier
RF3933
RF3934
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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Gan hemt transistor RFMD
Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933
Text: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz
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GaN ADS
Abstract: GaN amplifier 120W transistor hemt RF393x
Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,
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RF393x
900MHz
220mA)
220mA,
RF3934
440mA)
900MHz)
GaN ADS
GaN amplifier 120W
transistor hemt
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VCO-102
Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high
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BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
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PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
BA 7891 NG
bts 2140 1b
TFF1014
BLF4G08LS-160A
bf1107 spice model
BF862 spice model
RF transceiver 802.11AC
Multiple output LNB
802.11AC
BGU6104
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Integrated Synthesizers with Mixers
Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services
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11F-B,
Integrated Synthesizers with Mixers
Digital Step Attenuators
3G/4G Power Amplifiers
CATV Amplifiers
CATV Hybrid Amplifier Modules
Gain Blocks
Linear Amplifiers
Low Noise Amplifiers
Variable Gain Amplifiers
WiFi Power Amplifiers
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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Abstract: No abstract text available
Text: PRELIMINARY RFHA1021L RFHA1021L 60W GaN Wide-Band Pulsed Power Amplifier The RFHA1021L is a 50V 60W high power amplifier designed for SBand pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high
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DS131203
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rf3826
Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931
Text: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.
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6 pin TRANSISTOR SMD CODE CAA
Abstract: TEA6721 BF991 spice model
Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、
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