GATE ARRAY Search Results

GATE ARRAY Result Highlights (5)

Part	Manufacturer	Description
TE512S32-25LC	Rochester Electronics LLC	TE512S32 - Field Programmable Gate Array, CMOS, PQFP128
TE505S16-40QC-G	Rochester Electronics LLC	TE505S16 - Field Programmable Gate Array, CMOS, PQFP208
TE505S16-40QI	Rochester Electronics LLC	TE505S16 - Field Programmable Gate Array, CMOS, PQFP208
TE505S16-25QC-G	Rochester Electronics LLC	TE512S32 - Field Programmable Gate Array, CMOS
TE512S32-40LC	Rochester Electronics LLC	TE512S32 - Field Programmable Gate Array, CMOS, PQFP128

GATE ARRAY Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
Gate Array	Altera	Using Programmable Logic for Gate Array Designs Application Note 51	Original	PDF
Gate Arrays-Embedded Arrays - Application Notes	Atmel	ASIC Design Guidelinges , This document constitutes a general set of recommendations intended for use by designers when preparing circuits for fabrication by Atmel. The guidelines are independent of any particular CAD tool or silicon process. They are a	Original	PDF
Gate Arrays-Embedded Arrays - Application Notes	Atmel	Converting FPGAs and PLDs to Atmel Gate Arrays , This Application Note discusses some factors to consider when deciding to convert, describes the conversion process, and details the required information for selected FPGA and PLD products.	Original	PDF
Gate Arrays-Embedded Arrays - Support Tools	Atmel	Design Tools , Table of Gate Array Tools	Original	PDF

GATE ARRAY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor Bc 540 Abstract: BC 241 BC 511 description of transistor bc 148 pf958 SLA6028 bc 148 transistor 107ps BC 247 transistor bc 548 Text: PF958-02 SLA60000 Series High Density Gate Array ● 0.25µm CMOS Gate Array ● Low power consumption ● Covered from 99k to 2,519k raw gates • DESCRIPTION The SLA60000 Series are CMOS Gate Arrays which are adopting on 0.25µm silicon gate process with 3	Original	PDF	PF958-02 SLA60000 107ps 107ps 270ps 1600ps transistor Bc 540 BC 241 BC 511 description of transistor bc 148 pf958 SLA6028 bc 148 transistor BC 247 transistor bc 548
LZ95300 Abstract: SHARP LZ93 LZ95 Text: CMOS Gate Array CMOS Gate Array Gate Array Series High Speed Low Power Supply High Speed BiCMOS LZ93 Series LZ95 Series LZ96 Series LZ97 Series ' F.O. = 3 , Al = 2mm 300 to 5000 gates, 1.7ns/gate* 300 to 10000 gates, 1.2ns/gate* 300 to 4000 gates, 9.5ns/gate*	OCR Scan	PDF	LZ93300 LZ95300 LZ96300 LZ97600 LZ93600 LZ95650 LZ96650 LZ931000 LZ931100 LZ951170 SHARP LZ93 LZ95
acumos Abstract: list of n channel fet A300 MF10 nmos pmos array n channel fet array Text: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double poly p-well process. The minimum gate channel	OCR Scan	PDF
nmos pmos array Abstract: mf10 A300 list of n channel fet Acumos n channel fet array Text: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double poly p-well process. The minimum gate channel	OCR Scan	PDF
LSI CMOS GATE ARRAY Abstract: No abstract text available Text: A 1c • CMOS Gate Arrays # MN5COOO Series Sea-of-Gate (Some products under development) Internal gate delay time 0.110ns 3.3V, F.O. = 2, Standard wiring length Gate density Max. 150 gate (number of laid-down gates) Gate use ratio: 35 - 45% (2-layer wiring), 65 - 85% (three-layer wiring)	OCR Scan	PDF	110ns MNT7C000 MN5AA000 MN5AA003 MN5AA005 MN5AA010 MN5AA017 LSI CMOS GATE ARRAY
Untitled Abstract: No abstract text available Text: > Gate Arrays and Cell-based ICs Gate Arrays Thanks to a short turnaround time and ease of design, gate arrays are being employed in a wide variety of applications. Sharp offers a broad range of gate array series, including channel-free "Seaof-Gate" type gate arrays and low voltage CMOS	OCR Scan	PDF
MN53010 Abstract: MN53007 MN53003 MN53015 MN53020 MN-53020 mn53005 MN-53 Text: ASIC • CMOS Gate Arrays # Series Lineup Series Delay Time MN53ÛC0 Features 1.4ns VDD =5V Low gate, Few pin package MN56000 Standard channel type gate array, Actel pin compatible gate array support MN56A00 Sea-of-gate, Optional bit, Word RAM/ROM possible	OCR Scan	PDF	MN56000 MN56A00 MN56E00 MN59000 160-pin MN5AA000 64Kbit 256Kbit MN53010 MN53007 MN53003 MN53015 MN53020 MN-53020 mn53005 MN-53
LZ95300 Abstract: NT315 LZ96650 LZ9G5100 Text: GATE ARRAY GATE ARRAYS ★ Under development SFASIC ♦ Features • A variety of feature-intensive devices are available, including the “sea of gate” gate arrays featuring a wide range of functional blocks and high speeds, and CMOS gate arrays with low operating voltage.	OCR Scan	PDF	LZ9J10000 LZ9J12500 LZ9J15000 LZ9J20000 LZ9J25000 LZ9J30000 J38000 LZ9J50000 LZ9J60000 LZ9J67000 LZ95300 NT315 LZ96650 LZ9G5100
Field-Programmable Gate Arrays Abstract: No abstract text available Text: TPC14 SERIES CMOS FIELD-PROGRAMMABLE GATE ARRAYS ^ JA N U A RY 1993 • • • • • • Gate Capacities from < 1,000 to > 10,000 Gate Array Gates Gate Capacities from < 2,500 to > 25,000	OCR Scan	PDF	TPC14 16-Bit TPC10 TPC12 Field-Programmable Gate Arrays
clcc 68 Abstract: CLCC 44 Fairchild 100K series ECL CPGA routing CLCC 24 layout CERAMIC LEADLESS CHIP CARRIER LCC 44 CERAMIC leaded CHIP CARRIER CLCC 68 CPGA132 CPGA CLCC 84 Text: Gate Array Products FAIRCHILD A Schlum berger Com pany First/Second Q uarter 1986 Gate Array Division Fairchild Gate Array Division offers com plete in-house design and production capabilities for high perform ance ECL and CMOS gate arrays. Featured with all Fairchild ECL gate arrays are speed/power	OCR Scan	PDF
LZ95300 Abstract: lz95 000GATES Text: GATEARRAYS AND CELL-BASED fCs Lineup of Gate Arrays Available Gate Count Channel Type Gate count LZ95 series « Internal gate 1.2 ns/gate Vcc = 5 V, F.O. = 3, 4 = 2 mm n? Input butter 2.4 ns (Vcc = 5 V, F.O. = 3 , i = 2mm) CD a Output butter Supply voltage	OCR Scan	PDF	LZ95300 LZ95650 LZ951170 LZ951600 LZ952000 LZ953000 LZ954000 LZ955000 LZ956000 LZ958000 lz95 000GATES
Untitled Abstract: No abstract text available Text: GATEARRAYS AND CELL-BASED ICs Channel Type Low-voftage Type Sea-of-Gate Type High-density Sea-of-Gate Type Thanks to a short turnaround time and ease of desigh, gate arrays are being employed in a wide variety of applications. Sharp offers a broard range of gate array series, including channel-free “ Seaof-Gate” type gate arrays and low voltage CMOS	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: m i Enhanced I/O Airays SEMICONDUCTORS 1.0 micron Gate Arrays October 1992 AMI’s ASIC product line has been expanded to include gate arrays targeted toward high pin count, low gate count applications. FPGA conversions to gate array, disk drive, computer, and telecom applications with high I/O, low gate count ratios are perfect	OCR Scan	PDF
sla6050 Abstract: SLA6270 SLA6080 SLA6430 SLA6620 SLA6000 AA132 SLA6270* plcc F44-6 SLA6140 Text: SLA6000 / - y .2 ' CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Compatible Gate Densities from 513 to 6,206 Gates • DESCRIPTION The SLA6000 series consists of a group of 8 CMOS gate arrays with gate counts from 513 to 6,206 gates. The	OCR Scan	PDF	SLA6000 SLA6000 F44-6 F52-6 F60-6 F60-5 F80-5 F100-5 M24-2 M28-2 sla6050 SLA6270 SLA6080 SLA6430 SLA6620 AA132 SLA6270* plcc F44-6 SLA6140

BU16503 Abstract: BU16307 BU16515 bu16531 Text: CMOS Gate Arrays 0.6 /¿m CMOS Gate Array BU16K Family The ROHM BU16K family of CMOS gate array ICs are fabricated using ROHM’s unique 0.6 /¿m submicron process. These gate array are compatible with ROHM’s new ISM model and have reduced noise. Series line-up	OCR Scan	PDF	BU16K BU16300 BU16500 BU16303 BU16309 BU16310 BU16311 BU16503 BU16508 BU16307 BU16515 bu16531
LZ9G5100 Abstract: No abstract text available Text: GATE ARRAYS AND CELL-BASED ICs High-Density Sea-of-Gate type Gate c o u n t i LZ9G series Internal gate 0.9 ns/gate Vcc = 5 V, F.O. = 2, l = 2 mm Input buffer 2.7 ns (Vcc = 5 V, F.O. =2, I = 2 mm) Output buffer j 5.0 ns (Vcc = 5 V, C l 750 gates 2.0 to 5.5 V	OCR Scan	PDF	LZ9G750 LZ9G1900 LZ9G3400 LZ9G5100 LZ9G7000 LZ9G9800 LZ9G11000 LZ9000 LZ9F87000 LZ9F106000
CTR34 Abstract: FGE2000 BL33B DFI01 Fairchild ZN 1010 L1332 JKI02 ctr-34 SHR04 OAI43 Text: NATL SEMICOND -CMEnORY> □2E D \| ts D iia b □□bi3n ? I FGE Series ECL Gate Arrays FAIRCHILD A Schlumberger Company Description FGE Series Features The FGE Series of ECL gate arrays are the fastest silicon gate arrays commercially available. These advanced ECL gate ar	OCR Scan	PDF	F100K 225-picosecond andRS003 TTRS103 Controller/16-out CTR34 FGE2000 BL33B DFI01 Fairchild ZN 1010 L1332 JKI02 ctr-34 SHR04 OAI43
4009S Abstract: LZ95300 lz93 LZ95 Text: CM O S Gate Array LZ93 Series LZ93 Series • CMOS Gate Array Description ■ The LZ93 series CMOS gate array provides 300 to 5000 gates of line up with high speed and low power consumption. It is fabricated using 1.6 ,«m CMOS silicon gate/ double metal technology.	OCR Scan	PDF	LZ93600 LZ93300 LZ931100 LZ931600. 4009S LZ95300 lz93 LZ95
1N3064 Abstract: 1N916 TE1000 TE3000 Text: DATA SHEET Bipolar Gate Arrays TE1000 Series Gate Array DESCRIPTION The TE1000 high-speed gate array is a member o f the Customized TTL-ECL Gate Array family, designed using advanced oxil-isolated OXIL bipolar technology. It features 1000 internal gates and has a total of 96 inputs,	OCR Scan	PDF	TE1000 50-ohm 68-lead 1N916 1N3064. 68-Pin 1N3064 TE3000
SHARP LZ93 Abstract: 74ls series gate Text: CM OS Gate Array LZ96 Series LZ96 Series • CMOS Gate Array ■ Description 1. CMOS process 2. Number of gates : 300, 650, 1170. 2000, and 4000 3. Internal gate delay 9.5ns/gate 1.5V operating voltage 4. Macro cell : 95cells 74LS cell : 126cells 5. I/O level : CMOS level	OCR Scan	PDF	LZ93/LZ95 95cells 126cells LZ96300 LZ964000 85VCC SHARP LZ93 74ls series gate
Untitled Abstract: No abstract text available Text: ACT 3 Field Programmable Gate Arrays Features • Gate Capacities from Less than 1,000 to G reater than 10,000 Gate A rray Gates • Gate Capacities from Less than 2,500 to G reater than 25,000 PLD/LCA ™ Equivalent Gates • Replace from 30 to 340 T T L Packages	OCR Scan	PDF	16-bit
Untitled Abstract: No abstract text available Text: DATA SHEET Bipolar Gate Arrays LS2000 Series Gate Array DESCRIPTION CAD FEATURES The LS2000 high-speed gate array is designed using advanced oxil-isolated OXIL bipolar technology. It is compatible with the TTL-ECL series o f customized gate arrays. It features 2000 internal gates and has a total of	OCR Scan	PDF	LS2000 LS240 68-lead, 70-lead 104-lead 50AL203140, c86-211DBIP
Fairchild ZN 1010 Abstract: GENERAL INSTRUMENT west 2500 ic ZN 415 FGE2000 Text: FGE Series ECL Gate Arrays PAIRCHIL.D A Schlum berc T'HO Qr>y 005596 January 1986 Description U/v\A m b The FGE Series of ECL gate arrays are the fastest silicon gate arrays com m ercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer	OCR Scan	PDF	F100K, FGE2500) 28ngton Fairchild ZN 1010 GENERAL INSTRUMENT west 2500 ic ZN 415 FGE2000
tc140g Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18 Text: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.	OCR Scan	PDF	TC140G 167th MAS-0097/3-92 TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18

GATE ARRAY Search Results

GATE ARRAY Result Highlights (5)

GATE ARRAY Datasheets (4)

GATE ARRAY Datasheets Context Search

transistor Bc 540

LZ95300

acumos

nmos pmos array

LSI CMOS GATE ARRAY

Untitled

MN53010

LZ95300

Field-Programmable Gate Arrays

clcc 68

LZ95300

Untitled

Untitled

sla6050

BU16503

LZ9G5100

CTR34

4009S

1N3064

SHARP LZ93

Untitled

Untitled

Fairchild ZN 1010

tc140g