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    design an 8 Bit ALU using VHDL software tools -FP

    Abstract: AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K
    Text: Cell-Based IC Features • • • • • • • Integration of all the elements of a complex electronic system on a single IC. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMITM ARM Thumb , 8051TM ,


    Original     		PDF 8051TM 10Kx16-bit design an 8 Bit ALU using VHDL software tools -FP AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K

    full subtractor using NOR gate for circuit diagram

    Abstract: full subtractor circuit using nor gates AX277 2 bit full adder SIGNAL PATH DESIGNER full subtractor circuit using nand gate
    Text: VITESSE SEMICONDUCT OR 30E D H '1502331 GODDeTb 5 * V T S T -M -H ! Features • VLSI Complexity: > 35,000 Gates •Very Low Power Disspation • Superior Performance: 300M Hz to 3 GHz ■High Yielding, 4 Layer Metal, VLSI Process • Choice of Operating Temperature Ranges:


    OCR Scan     		PDF VCB50K Mil-Std-883C, full subtractor using NOR gate for circuit diagram full subtractor circuit using nor gates AX277 2 bit full adder SIGNAL PATH DESIGNER full subtractor circuit using nand gate

    PC6015

    Abstract: No abstract text available
    Text: SI ERRA SEMI CONDUCTOR '»r SIERRA SEMICONDUCTOR ÇORP 47E ì> 0242010 0001724 T «SSC Semicustom Capability Analog, Digital and EEPROM combined on the same chip. Sierra is a leading supplier of m ixed-signal standard cell ASICs. The Com pany's unique Triple Technology process perm its the


    OCR Scan     		PDF

    PT6005

    Abstract: VSC300
    Text: V L S I TECHNOLOGY INC IflE D T3ÔÔ347 üüü32bfl 4 VLSI T ech n o lo gy, inc. VSC300 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL FEATURES • A dvanced 1-m icron draw n gate length , silicon gate C M O S , 2 -la ye r m etal technology • Fast design tu rn-around tim e w ith


    OCR Scan     		PDF 32bfl VSC300 PT6005

    VGT300039

    Abstract: PT6045 VGT300022 PT6005
    Text: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


    OCR Scan     		PDF T3flfl34? VGT350/VGT353 85-micron VGT350/353 VGT300039 PT6045 VGT300022 PT6005

    HP83000

    Abstract: Electro SEX X81D1 HP8300 X41D ECL IC NAND
    Text: • 7 Ô1 1 D 7 3 O G lb a ^ O Tas B R K Iil Cyclone Series Cyclone Series GaAs Gate Arrays Rockwell Introduction The sub-micron Cyclone Series™ of GaAs gate arrays from Rockwell represent the culmination of over ten years of research and development.


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    T6004

    Abstract: PT6005
    Text: S7E D HARRIS S E M I C O N D SE CT OR Bl 4302671 DDlböDS b 1 HAS CGA200 Seríes Advance Information Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate Array Series Features: • C ontin uou s Gate architectu re offers m axim um layou t e fficie ncy w ith 30% gate u tilizatio n fo r random logic


    OCR Scan     		PDF CGA200 21-pF T6004 PT6005

    R/CHN 041 diode

    Abstract: No abstract text available
    Text: V L S I Te c h n o l o g y in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES ^ s • Advanced f.O microij/idrawn silicon gate'technutbgy • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency


    OCR Scan     		PDF VGT300 R/CHN 041 diode

    Untitled

    Abstract: No abstract text available
    Text: High-Reliability ASICs CGA100 Series These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration. Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate-Array Series


    OCR Scan     		PDF CGA100 TheGE/RCACGA100Series PC7T11-3 PC7C01-3 PC7C11-3 PC7S01-3 PC7S11-3

    VLSI Technology

    Abstract: kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification VGT300 "VLSI Technology Inc." PT6055 GAH 521 fabrimex
    Text: V L S I T ec h n o lo g y , in c . VGT300 SERIES 1.0-MICRON GATE ARRAY SERIES FEATURES s • Advanced f.O microp/fdrawn silicon gate'techrrology • Seven array sizes from 30,300 to 246,500 available gates • Continuous Gate architecture for maximum layout efficiency


    OCR Scan     		PDF VGT300 VLSI Technology kt 714 schematic transistor modul trigger pt6005 vlsi design physical verification "VLSI Technology Inc." PT6055 GAH 521 fabrimex

    CGA10-016

    Abstract: No abstract text available
    Text: . H Ig h -R riia b illty A S IC s CGA10 Series These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration. Continuous Gate* Technology 2-Micron CMOS Gate-Array Series


    OCR Scan     		PDF CGA10 CGA10-016

    RS flip flop cmos

    Abstract: full subtractor circuit using nor gates PC7001 subtractor using TTL CMOS full subtractor circuit using and gates RCA 528 CGA100-121 PC7003 AD01D1 CGA100
    Text: High-Retiability ASICs CGA100 Series These data sheets are provided fo r technical guidance only. The "final device perform ance may vary depending upon the final device design and configuration. Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate-Array Series


    OCR Scan     		PDF CGA100 PC7C01-3 PC7C11-3 PC7S01-3 PC7S11-3 RS flip flop cmos full subtractor circuit using nor gates PC7001 subtractor using TTL CMOS full subtractor circuit using and gates RCA 528 CGA100-121 PC7003 AD01D1

    full subtractor circuit using decoder and nand ga

    Abstract: full subtractor circuit using nand gates PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912 PC6D10 PT6005
    Text: VLSI T e c h n o l o g y , in c . VGT200 SERIES CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • A vaila b le in th irte e n sizes from 960 to 54,000 usable gates The V G T 200 Series is an advanced, high performance C M O S gate array


    OCR Scan     		PDF VGT200 400-018-A-028 full subtractor circuit using decoder and nand ga full subtractor circuit using nand gates PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912 PC6D10 PT6005

    PC5004

    Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
    Text: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz


    OCR Scan     		PDF 55-micron PC5004 VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding

    Kt 0912

    Abstract: full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968
    Text: V L SI Technology, inc . PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES 7 FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates (12,149 to 66,550 available gates The VGT100 Series is an advanced,


    OCR Scan     		PDF VGT100 100-063-A-23-096 Kt 0912 full subtractor circuit using decoder and nand ga schematic transistor modul trigger full subtractor circuit using nand gates DR 4180 vlsi design physical verification VGT100160 Remington 700 full subtractor circuit using nor gates sis 968

    PT6045

    Abstract: VSC370 PT6005
    Text: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


    OCR Scan     		PDF VSC370 85-micron 000fiö T-42-41 PT6045 PT6005

    ST CHN 021

    Abstract: 13003 PT6005 PT6001
    Text: V L S I TECHNOLOGY INC IflE D VLSI T ech n o lo g y T36Ô347 DGD3E7ti 3 in c . VSC320 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL FEATURES • A dvanced 1-m icron drawn gate length , silicon gate C M O S , 2-layer metal technology • Fast design tu rn-around tim e w ith


    OCR Scan     		PDF VSC320 ST CHN 021 13003 PT6005 PT6001

    full subtractor circuit using decoder and nand ga

    Abstract: full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram
    Text: V L S I Technology , in c PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates 12,149 to 66,550 available gates The VGT100 Series is an advanced,


    OCR Scan     		PDF VGT100 100-063-A-23-096 full subtractor circuit using decoder and nand ga full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram

    130 nm CMOS standard cell library

    Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453
    Text: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS


    OCR Scan     		PDF VGC450/VGC453 VGC453 VGC450 130 nm CMOS standard cell library 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1

    ND02D1

    Abstract: pc7004 PC7001
    Text: HARRIS SEMICOND SECTOR 37E D 4305271 G024S75 S • HAS 'TA'L- H-OR Application Specific iCs C G A 1 00 Series Advance Information Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate-Array Series Features: ■ Continuous Gate architecture offers maximum layout


    OCR Scan     		PDF G024S75 CGA100 B--03 ND02D1 pc7004 PC7001

    Transistor ge 718

    Abstract: IN01D3 CGA10-016
    Text: HA RR IS SEflICOND S E C T O R ^ 3 ? E D 4 3 0 5 27 1 O G S M S b S Application Specific /Cs ö «HAS CGA10 Series Advance Information Continuous Gate* Technology 2-Micron CMOS Gate-Array Series Features: • Continuous Gate architecture offers maximum layout


    OCR Scan     		PDF CGA10 Transistor ge 718 IN01D3 CGA10-016

    nd02d2

    Abstract: No abstract text available
    Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design


    OCR Scan     		PDF VGC450/VGC453 VGC450/453 nd02d2

    Arm processor vlsi technology

    Abstract: PC302 QFP 128 bonding
    Text: VLSI T e ch n o lo g y o.5-m ic r o n in c. _ PRELIMINARY ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.5-micron 0.45-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec


    OCR Scan     		PDF 45-micron Arm processor vlsi technology PC302 QFP 128 bonding

    PT6042

    Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
    Text: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS


    OCR Scan     		PDF VGC450/VGC453 VGC453 VGC450 PT6042 model values for 0.18 micron technology cmos nd02d2