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    GATE-DRAIN ZENER Search Results

    GATE-DRAIN ZENER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GATE-DRAIN ZENER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		PDF 3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features General Description ►► High voltage Vertical DMOS technology ►► Integrated drain output high voltage diodes ►► Integrated gate-to-source resistor


    Original     		PDF TC7920 TC7920 12-Lead DSFP-TC7920 B080613

    A121010

    Abstract: N mosfet 100v 500A
    Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor


    Original     		PDF TC7920 TC7920 12-Lead DSFP-TC7920 A121010 A121010 N mosfet 100v 500A

    P-MOSFET

    Abstract: TC7920 ir 222 125OC MD1822 C7920
    Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor


    Original     		PDF TC7920 TC7920 12-Lead DSFP-TC7920 A121010 P-MOSFET ir 222 125OC MD1822 C7920

    XM116

    Abstract: M116 M116 CALOGIC
    Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC M116 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V


    Original     		PDF -65oC 200oC -55oC 125oC 10sec) DS051 XM116 M116 M116 CALOGIC

    M116

    Abstract: XM116 M116 CALOGIC
    Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION M116 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V


    Original     		PDF -65oC 200oC -55oC 125oC 10sec) M116 XM116 M116 CALOGIC

    RF800

    Abstract: MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A
    Text: ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted. Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS


    Original     		PDF P-244 RF800 MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


    Original     		PDF LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel

    AOT502

    Abstract: gate-drain zener 50E05 102-AX
    Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT502 AOT502 gate-drain zener 50E05 102-AX

    gate to drain clamp

    Abstract: 30A 44 zener diode gate-drain zener AOT500 8017M
    Text: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT500 AOT500 50E-06 00E-06 00E-05 300mW Fig16: gate to drain clamp 30A 44 zener diode gate-drain zener 8017M

    AOT500

    Abstract: gate to drain clamp
    Text: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT500 AOT500 gate to drain clamp

    AOT500

    Abstract: gate to drain clamp
    Text: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT500L AOT500 AOT500 gate to drain clamp

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type Mesh Overlay Power MOSFET KTS1C1S250 Features Typical RDS on (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0)


    Original     		PDF KTS1C1S250

    2Z30

    Abstract: smny2z30
    Text: SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDDS=300V Min.  Low gate charge: Qg=2.9nC (Typ.)  Low drain-source On resistance: RDS(on)=8Ω (Max.)  Built-in protection zener diode  RoHS compliant device


    Original     		PDF SMNY2Z30 08-JUN-11 KSD-T0A075-000 2Z30 smny2z30

    Untitled

    Abstract: No abstract text available
    Text: A3944 Automotive, Low-Side FET Pre-Driver Description Features and Benefits • 6 channels • Drives logic-level N-channel MOSFETs • 50 mA gate drive current • Short and open detection • High voltage 50 V drain feedback inputs • Programmable fault timers and thresholds per channel


    Original     		PDF A3944 28-pin A3944

    A3944

    Abstract: GAT4 a3944k 3SB20 DRN2
    Text: A3944 Automotive, Low-Side FET Pre-Driver Description Features and Benefits • 6 channels • Drives logic-level N-channel MOSFETs • 50 mA gate drive current • Short and open detection • High voltage 50 V drain feedback inputs • Programmable fault timers and thresholds per channel


    Original     		PDF A3944 GAT4 a3944k 3SB20 DRN2

    a3944

    Abstract: a3944k IPC7351 JESD51-5 c3sb Peak and Hold PWM MOSFET Predriver si24
    Text: A3944 Automotive, Low-Side FET Pre-Driver Description Features and Benefits • 6 channels • Drives logic-level N-channel MOSFETs • 50 mA gate drive current • Short and open detection • High voltage 50 V drain feedback inputs • Programmable fault timers and thresholds per channel


    Original     		PDF A3944 28-pin A3944 a3944k IPC7351 JESD51-5 c3sb Peak and Hold PWM MOSFET Predriver si24

    mtp3n6

    Abstract: No abstract text available
    Text: MTP3N60E Designer’s Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast


    Original     		PDF MTP3N60E MTP3N60E/D mtp3n6

    TC9184AP

    Abstract: No abstract text available
    Text: TC74VHC03F/FN/FS TENTATIVE DATA QUAD 2 • INPUT NAND GATE OPEN DRAIN The TC74VHC03 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while m aintaining the CMOS low


    OCR Scan     		PDF TC74VHC03F/FN/FS TC74VHC03 TC74VHCOO. TC9184AP TA75558P, TC9184AP

    injector MOSFET driver

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET MLP1N06CL Motorola Preferred Device These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate-to-source clamp for ESD protection and gate-to-drain


    OCR Scan     		PDF MLP1N06CL MLP1N06CL injector MOSFET driver

    MOSFET IGSS 100nA VDS 20V

    Abstract: M116 XM116 low igss
    Text: calocfic _ Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION \J M116 ’ FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Low I g s s * Integrated Zener Clamp for Gate Protection Drain to Source V o lta g e . 30V


    OCR Scan     		PDF 10sec) 225mW MOSFET IGSS 100nA VDS 20V M116 XM116 low igss

    M116

    Abstract: gate-drain zener zener wafer
    Text: M116 Diode Protected N-Channell Enhancement Mode MOS FET GENERAL DESCRIPTION • DEVICE SCHEMATIC PIN CONFIGURATION Lo w l GSS \ • L TO-72 Integrated Zener Clamp Protects the Gate Ï ABSOLUTE M AXIMUM RATINGS 25°C Drain-to-Source Voltage 30 V G ate-to-D rain Voltage.


    OCR Scan     		PDF 1003-Z M116/W M116/D 100/aA, 10i/A, M116 gate-drain zener zener wafer

    Untitled

    Abstract: No abstract text available
    Text: TC74VHC05F/FN/FS TENTATIVE DATA HEX INVERTER OPEN DRAIN The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent Bipolar Schottky TTL while m aintaining the CMOS low


    OCR Scan     		PDF TC74VHC05F/FN/FS TC74VHC05 TC74VHC04, TC9184AP TA75558P, TA75559P

    transistor vn2222l

    Abstract: No abstract text available
    Text: VN2222L N-Channel Enhancement-Mode MOS Transistor TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY V (BR)DSS "W Id (A) 60 7.5 0.23 Performance Curves: 1 SOURCE 2 GATE 3 DRAIN 1— 2 H —1 1 VNDP06 °1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF VN2222L O-226AA) VNDP06 1250C transistor vn2222l