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    GB05SHT12 Search Results

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    GB05SHT12 Price and Stock

    GeneSic Semiconductor Inc GB05SHT12-CAL

    SiC Schottky Diodes SiC 1200V 5A 225DegC AI Top and Au Bottom
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GB05SHT12-CAL
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    • 100 $132.26
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    GeneSic Semiconductor Inc GB05SHT12-CAU

    SiC Schottky Diodes SiC 1200V 5A 225DegC Au Top and Au Bottom
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GB05SHT12-CAU
    • 1 -
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    • 100 $183.54
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    Navitas Semiconductor GB05SHT12-CAU

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    Onlinecomponents.com GB05SHT12-CAU
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    • 100 $174.39
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    Navitas Semiconductor GB05SHT12-CAL

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    Onlinecomponents.com GB05SHT12-CAL
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    • 100 $120.05
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    GB05SHT12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB05SHT12-CAU VRRM o IF @ 25 C QC = = = 1200 V 8A 17 nC Features •        1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB05SHT12-CAU Mil-PRF-19500 GB05SHT12 45E-15 00E-10 00E-03

    GB05SHT12-CAU SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB05SHT12-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT12-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *


    Original     		PDF GB05SHT12-CAU GB05SHT12-CAU. 05-SEP-2013 GB05Smperature GB05SHT12 45E-15 00E-10 GB05SHT12-CAU SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB05SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB05SHT12-CAL TEMP-24) GB05SHT12 45E-15 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB05SHT12-CAL VRRM o IF @ 25 C QC = = = 1200 V 8A 17 nC Features •        1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB05SHT12-CAL Mil-PRF-19500 GB05SHT12 45E-15 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB05SHT12-CAU Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB05SHT12-CAU TEMP-24) GB05SHT12 45E-15 00E-10 00E-03

    GB05SHT12-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB05SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *


    Original     		PDF GB05SHT12-CAL GB05SHT12-CAL. 05-SEP-2013 GB05Smperature GB05SHT12 45E-15 00E-10 GB05SHT12-CAL SPICE high-temperature-sic-bare-die