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GeneSic Semiconductor Inc GB10SLT12-220 DIODE SIL CARB 1.2KV 10A TO220-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GB10SLT12-220	Tube			600	1 - 10 - 100 - 1000 $8.125 10000 $8.125	Buy Now
NAC	GB10SLT12-220				600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
GeneSic Semiconductor Inc GB10SLT12-252 DIODE SIL CARB 1.2KV 10A TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GB10SLT12-252	Tube			2,500	1 - 10 - 100 - 1000 - 10000 $5.15625	Buy Now
NAC	GB10SLT12-252				2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
GeneSic Semiconductor Inc GB10SLT12-247D DIODE ARRAY SIC 1200V 12A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GB10SLT12-247D	Tube			360	1 - 10 - 100 - 1000 $4.125 10000 $4.125	Buy Now
NAC	GB10SLT12-247D				360	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Navitas Semiconductor GB10SLT12-247 SiC Schottky Diodes 1200V 10A SiC Schottky Rectifier
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GB10SLT12-247					1 - 10 - 100 - 1000 $11.89 10000 $11.89	Get Quote

GB10SLT12 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GB10SLT12-220		GeneSiC Semiconductor	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1200V 10A TO220AC		Original	PDF
GB10SLT12-247D		GeneSiC Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 1.2KV 12A TO247D		Original	PDF
GB10SLT12-252		GeneSiC Semiconductor	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 10A TO252		Original	PDF

GB10SLT12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: GB10SLT12-252 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB10SLT12-252 0SLT12-252 GB10SLT12 55E-15 71739E-05 40E-10 00E-10	PDF
Untitled Abstract: No abstract text available Text: GB10SLT12-220 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB10SLT12-220 220AC withou0SLT12-220 GB10SLT12 55E-15 71739E-05 40E-10	PDF
Untitled Abstract: No abstract text available Text: GB10SLT12-252 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior	Original	GB10SLT12-252 sw2-252 GB10SLT12 55E-15 71739E-05 40E-10 00E-10	PDF
Untitled Abstract: No abstract text available Text: GB10SLT12-220 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior	Original	GB10SLT12-220 220AC GB10SLT12 55E-15 71739E-05 40E-10 00E-10	PDF
Untitled Abstract: No abstract text available Text: GB10SLT12-220 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB10SLT12-220. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 20-SEP-2013 $ * * GeneSiC Semiconductor Inc.	Original	GB10SLT12-220 GB10SLT12-220. 20-SEP-2013 GB10SLT12-220 SPICE2-220 GB10SLT12 55E-15	PDF
Untitled Abstract: No abstract text available Text: Electrical Datasheet* GB10SLT12-CAL Silicon Carbide Power Schottky Diode VRRM VF IF QC = = = = 1200 V 1.55 V 10 A 52 nC Features •     1200 V Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Fast switching speeds	Original	GB10SLT12-CAL 0SLT12-CAL GB10SLT12 55E-15 71739E-05 40E-10 00E-10	PDF
GB10SLT12-CAL Abstract: high-temperature-sic-bare-die Text: Die Datasheet GB10SLT12-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 25 A 31 nC Features •       1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB10SLT12-CAL GB10SLT12 55E-15 71739E-05 40E-10 00E-10 00E-03 GB10SLT12-CAL high-temperature-sic-bare-die	PDF
Untitled Abstract: No abstract text available Text: GB10SLT12-220 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB10SLT12-220 220AC withoB10SLT12-220 GB10SLT12 55E-15 71739E-05 40E-10	PDF
LTspice Abstract: No abstract text available Text: GB10SLT12-252 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB10SLT12-252. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * * GeneSiC Semiconductor Inc.	Original	GB10SLT12-252 GB10SLT12-252. 04-SEP-2013 GB10SLT12-252 SPICE2-252 GB10SLT12 55E-15 LTspice	PDF
GB10SLT12-CAL SPICE Abstract: high-temperature-sic-bare-die Text: Die Datasheet GB10SLT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB10SLT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 20-SEP-2013 $ * *	Original	GB10SLT12-CAL GB10SLT12-CAL. 20-SEP-2013 GB10SLT12 55E-15 71739E-05 40E-10 GB10SLT12-CAL SPICE high-temperature-sic-bare-die	PDF
Untitled Abstract: No abstract text available Text: GB10SLT12-252 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB10SLT12-252 withoutB10SLT12-252 GB10SLT12 55E-15 71739E-05 40E-10 00E-10	PDF
Untitled Abstract: No abstract text available Text: GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA05JT12-263 O-263 GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3	PDF
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l	PDF
hcpl 322j Abstract: hcpl-322j HCPL316 Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 hcpl 322j hcpl-322j HCPL316	PDF

Untitled Abstract: No abstract text available Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA10SICP12-247 O-247AB GA10SIPC12 00E-47 26E-28 5E-10 11E-09 00E-03	PDF
Untitled Abstract: No abstract text available Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA05JT12-247 O-247AB GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3	PDF