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    GB10SLT12-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB10SLT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB10SLT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 20-SEP-2013 $ * *


    Original     		GB10SLT12-CAL GB10SLT12-CAL. 20-SEP-2013 GB10SLT12 55E-15 71739E-05 40E-10 GB10SLT12-CAL SPICE high-temperature-sic-bare-die PDF

    GB10SLT12-CAL

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB10SLT12-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 25 A 31 nC Features •       1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		GB10SLT12-CAL GB10SLT12 55E-15 71739E-05 40E-10 00E-10 00E-03 GB10SLT12-CAL high-temperature-sic-bare-die PDF

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB10SLT12-CAL Silicon Carbide Power Schottky Diode VRRM VF IF QC = = = = 1200 V 1.55 V 10 A 52 nC Features •     1200 V Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Fast switching speeds


    Original     		GB10SLT12-CAL 0SLT12-CAL GB10SLT12 55E-15 71739E-05 40E-10 00E-10 PDF