Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GB50SLT06 Search Results

    GB50SLT06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GB50SLT06-CAL

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB50SLT06-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 100 A 158 nC Features •       650 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		GB50SLT06-CAL GB50SLT06 99E-16 86E-09 00E-10 00E-03 GB50SLT06-CAL high-temperature-sic-bare-die PDF

    GB50SLT06-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB50SLT06-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50SLT06-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * $Revision: 1.0 $Date: 20-SEP-2013 *


    Original     		GB50SLT06-CAL GA50SLT06-CAL. 20-SEP-2013 GB50SLT06 99E-16 86E-09 00E-10 GB50SLT06-CAL SPICE high-temperature-sic-bare-die PDF