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GeneSic Semiconductor Inc GB50SLT12-247 DIODE SIL CARB 1.2KV 50A TO247-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GB50SLT12-247	Tube			90	1 - 10 - 100 $27.42656 1000 $27.42656 10000 $27.42656	Buy Now
Newark	GB50SLT12-247	Bulk			300	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NAC	GB50SLT12-247	Tube			30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Navitas Semiconductor GB50SLT12-247 SiC Schottky Diode - 1200V - 50A - TO-247-2 - Single/Through Hole - Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	GB50SLT12-247		10			1 $38.49 10 $33.81 100 $27.53 1000 $25.64 10000 $25.64	Buy Now
Master Electronics	GB50SLT12-247		10			1 $38.493 10 $33.81 100 $27.529 1000 $25.638 10000 $25.638	Buy Now

GB50SLT12 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GB50SLT12-247		GeneSiC Semiconductor	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 50A TO247		Original	PDF

GB50SLT12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GB50SLT12-247 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	PDF	GB50SLT12-247Â 247AC GB50SLT12 99E-16 3E-05 86E-09 00E-10
Untitled Abstract: No abstract text available Text: GB50SLT12-247 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50SLT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * $Revision: 1.0 $Date: 20-SEP-2013 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.	Original	PDF	GB50SLT12-247Â GA50SLT12-247. 20-SEP-2013 GB50SLT12 99E-16 86E-09 00E-10
GB50SLT12-CAL Abstract: high-temperature-sic-bare-die Text: Die Datasheet GB50SLT12-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 100 A 158 nC Features •       1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	PDF	GB50SLT12-CAL GB50SLT12 99E-16 86E-09 00E-10 00E-03 GB50SLT12-CAL high-temperature-sic-bare-die
Untitled Abstract: No abstract text available Text: GB50SLT12-247 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	PDF	GB50SLT12-247Â 247AC th-247 GB50SLT12 99E-16 3E-05 86E-09
Untitled Abstract: No abstract text available Text: GB50SLT12-247 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 135°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior	Original	PDF	GB50SLT12-247 247AC GB50SLT12 99E-16 86E-09 00E-10 00E-03
GB50SLT12-CAL SPICE Abstract: high-temperature-sic-bare-die Text: Die Datasheet GB50SLT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50SLT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * $Revision: 1.0 $Date: 20-SEP-2013 *	Original	PDF	GB50SLT12-CAL GA50SLT12-CAL. 20-SEP-2013 curB50SLT12 GB50SLT12 99E-16 86E-09 00E-10 GB50SLT12-CAL SPICE high-temperature-sic-bare-die
Untitled Abstract: No abstract text available Text: Electrical Datasheet* GB50SLT12-CAL Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 1200 V 1.5 V 50 A 247 nC Features •      1200 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate	Original	PDF	GB50SLT12-CAL GB50SLT12-CAL GB50SLT12 TEMP-24) 39E-05) 99E-16 86E-09 00E-10
Untitled Abstract: No abstract text available Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	PDF	GA50SICP12-227 OT-227 Redu50SIPC12 GA50SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03
hcpl-322j Abstract: hcpl 322j Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	PDF	GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 hcpl-322j hcpl 322j
Untitled Abstract: No abstract text available Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	PDF	GA50SICP12-227 OT-227 ReducedGA50SIPC12 GA50SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03
Untitled Abstract: No abstract text available Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	PDF	GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3