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    GB50SLT12-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB50SLT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50SLT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * $Revision: 1.0 $Date: 20-SEP-2013 *


    Original     		GB50SLT12-CAL GA50SLT12-CAL. 20-SEP-2013 curB50SLT12 GB50SLT12 99E-16 86E-09 00E-10 GB50SLT12-CAL SPICE high-temperature-sic-bare-die PDF

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GB50SLT12-CAL Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 1200 V 1.5 V 50 A 247 nC Features •      1200 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate


    Original     		GB50SLT12-CAL GB50SLT12-CAL GB50SLT12 TEMP-24) 39E-05) 99E-16 86E-09 00E-10 PDF

    GB50SLT12-CAL

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB50SLT12-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 100 A 158 nC Features •       1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		GB50SLT12-CAL GB50SLT12 99E-16 86E-09 00E-10 00E-03 GB50SLT12-CAL high-temperature-sic-bare-die PDF