GBS TRANSISTOR Search Results

GBS TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

GBS TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Leaded Fixed Wirewound Resistors Abstract: BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed wirewound resistors vishay vse-db0008-0806 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents	Original	vse-db0008-0806 Leaded Fixed Wirewound Resistors BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic	PDF
LTTS e3 Abstract: gbs transistors Text: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,	Original	3A001 3A002, LTTS e3 gbs transistors	PDF
EHT COIL Abstract: C105 R105 R117 TDA8350 TDA9150B internal eht pin diagram horizontal output circuit with EHT TDA8350 equivalent Text: INTEGRATED CIRCUITS DATA SHEET TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors July 1994 Philips Semiconductors Preliminary specification Programmable deflection controller TDA9150B	Original	TDA9150B EHT COIL C105 R105 R117 TDA8350 TDA9150B internal eht pin diagram horizontal output circuit with EHT TDA8350 equivalent	PDF
EHT COIL Abstract: C105 R105 R117 TDA8350 TDA9151B Text: INTEGRATED CIRCUITS DATA SHEET TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 Philips Semiconductors July 1994 Philips Semiconductors Preliminary specification Programmable deflection controller	Original	TDA9151B EHT COIL C105 R105 R117 TDA8350 TDA9151B	PDF
EHT COIL Abstract: monitor EHT BUS CONTROLLED VERTICAL DEFLECTION SYSTEM function of tv deflection section C105 R105 R117 TDA8350 TDA9150B TDA8350 equivalent Text: INTEGRATED CIRCUITS DATA SHEET TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors July 1994 Philips Semiconductors Preliminary specification Programmable deflection controller TDA9150B	Original	TDA9150B SCD33 533061/1500/01/pp36 EHT COIL monitor EHT BUS CONTROLLED VERTICAL DEFLECTION SYSTEM function of tv deflection section C105 R105 R117 TDA8350 TDA9150B TDA8350 equivalent	PDF
TDA9151B Abstract: EHT COIL TV horizontal Deflection Systems TDA8350 BUS CONTROLLED VERTICAL DEFLECTION SYSTEM C105 R105 R117 Text: INTEGRATED CIRCUITS DATA SHEET TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 Philips Semiconductors July 1994 Philips Semiconductors Preliminary specification Programmable deflection controller	Original	TDA9151B SCD33 533061/1500/02/pp36 TDA9151B EHT COIL TV horizontal Deflection Systems TDA8350 BUS CONTROLLED VERTICAL DEFLECTION SYSTEM C105 R105 R117	PDF
Untitled Abstract: No abstract text available Text: 3EE D Bi A23b3S0 DGl?GbS 1 H S I P PNP Silicon RF Transistor BFT 92 SIEMENS/ SPCLi SEMICONDS _ • For broadband amplifiers up to 2 G Hz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	A23b3S0 OT-23 aS3b32Q Q0170bÃ BFT92	PDF
Untitled Abstract: No abstract text available Text: h ~7 > v / 2SD1768S $ /Transistors 2SD 1768S NPN y V 3 > V y ' s v W ^ s tlfr ^ llffl/M e c liu m Power Amp. Epitaxial Planar NPN Silicon Transistor • W K -tf;£@ /D im ension s U n it: mm • 1) VCeo »' ^ (8 0 V ) o 2) U AD C)0 3 ) hFE<7) o 4 ) V c e ( sat	OCR Scan	2SD1768S 1768S	PDF
Untitled Abstract: No abstract text available Text: h7 > V 2SC4939 $ / I ransistors 2SC 4939 H * y U = l> h -7 Epitaxial Planar NPN Silicon Transistor *y f-> ? ffl/H ig h Speed Switching • fl-J f^ ä ^ /D im e n s io n s (Unit : mm) 1) tf^ 0 .3 n s , (!c = 6 A ) 2) V c e (sat)— 0.3 V (lc /lB = 6 A /0 .3 A )	OCR Scan	2SC4939 50/iS	PDF
Untitled Abstract: No abstract text available Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD22 OT-143	PDF
Untitled Abstract: No abstract text available Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 7Z90791	PDF
transistor BD 430 Abstract: Depletion Text: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.	OCR Scan	bbS3T31 BSD20 BSD22 OT-143 transistor BD 430 Depletion	PDF
BSD10 Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	G1724-S BSD10 BSD12 BSD10 T-35-25 7Z90790 -r90X depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V	PDF
BSD12 Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor	PDF

MM4518 Abstract: MM452 csb 455 c CSB 455 psri mm4529 mm450 MM555 Text: Intersil High-Rellability Products_ M M 4 5 0 /4 5 1 /4 5 2 /4 5 5 High Reliability High Voltage Analog Switch GENERAL DESCRIPTION FEATURES The MM450, and MM550 series each contain p channel MOS enhancement mode transistors. These devices are useful in airborne and ground support systems requiring	OCR Scan	MM450/451/452/455 MM450, MM550 MM450 MM451 MM452 MM455 MM450/451 /452/45S MM4518 MM452 csb 455 c CSB 455 psri mm4529 mm450 MM555	PDF
2SC3839K Abstract: 2SC4084 Text: h ~7 > v 7. $ / T ransistors 2 C S 3 8 3 9 2SC3839K/2SC4084 K x t f ^ v ^ i / y ^ - ^ N P N v u = ] > h - 7 > v * £ Epitaxial Planar NPN Silicon Transistors 2SC4084 raJS'/SiH aE/R F Amplifier Dimensions U n it: mm 1) f r fT = 2 G H z (Typ.) 2SC 3839K 2SC 4084	OCR Scan	2SC3839K/2SC4084 2SC3839K 2SC4084 2SC3839K SC-59 0G11DDT IS12I 2SC4084	PDF
BSD20 Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.	OCR Scan	bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion	PDF
ha 431 transistor Abstract: TV horizontal Deflection Systems TDA9150 IEC134 of ic 555 philips 432 T control 00372bS pj 88 diode Text: Objective specification Philips Semiconductors Programmable deflection controller PHILIPS INTERNATIONAL FEATURES SbE » T - I 711002b 00372L3 TTD Current source output for high EMC immunity General • <p2 loop with low jitter • Synchronous logic • Dual slicer horizontal flyback input	OCR Scan	16-bit TDA9150 711005b T-77-07-11 ha 431 transistor TV horizontal Deflection Systems TDA9150 IEC134 of ic 555 philips 432 T control 00372bS pj 88 diode	PDF
transistor BD 339 Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341 Text: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.	OCR Scan	00E374S BSD212 BSD215 BSD213 BSD215 BSD214 bb53031 transistor BD 339 transistor BD 341 BB530 -20/transistor BD 341	PDF
depletion MOSFET Abstract: BSD22 n mosfet depletion transistor MARKING CODE RJ Text: bb53^31 □QSSMM'Î ^05 HIAPX • N AUER PHILIPS/DISCRETE BSD22 b?E D J MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR S ym m etrical insulated-gate silicon MOS fre ld -e ffe ct tran sisto r o f the n-channel d e p le tio n m ode type. The tran sisto r is sealed in a SO T-143 envelope and features a lo w ON-resistance and lo w capacitances.	OCR Scan	BSD22 OT-143 7Z90790 depletion MOSFET BSD22 n mosfet depletion transistor MARKING CODE RJ	PDF
STV60N06 Abstract: No abstract text available Text: r z 7 SGS-THOMSON Ä 7 # R!tlD S[ri ilLICTi iD©l STV60N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RDS(on Id STV60N06 60 V < 0.02 Û 60 A • TYPICAL R d s (o ii) = 0.017 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	STV60N06 GD73110 STV60N06	PDF
xl 3358 Abstract: function of tv deflection section KA025 tda9151 ic 2n35 data ttl D372 UKA039 gbs transistor RFT Semiconductors Text: Philips S em iconductors O bjective specification Programmable deflection controller TDA9151 T - 7 7 - o r - u PH IL IP S INTERNATIONAL FEATURES 711Qfl2b 00 37 2 0 5 S b l 5bE D General • Current source output for high EMC immunity • 6.75,13.5 and 27 MHz clock	OCR Scan	TDA9151 T-77-or-w 16-bit 711002b T-77-Ã TDA9151 711005b 003730b xl 3358 function of tv deflection section KA025 ic 2n35 data ttl D372 UKA039 gbs transistor RFT Semiconductors	PDF
UKA720 Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555 Text: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller	OCR Scan	TDA9150B 711002b 16-bit 7110fl2b UKA720 TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555	PDF
TDK Power Supply MRW Abstract: K-Line L line tda9151 TDA9151B Text: INTEGRATED CIRCUITS TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS I • 711DA2L, 0 0 7 0 1 0 7 T43 ■ PHILIPS Preliminary specification	OCR Scan	TDA9151B 16-bit 7110flEb G7fi21ci TDK Power Supply MRW K-Line L line tda9151 TDA9151B	PDF

GBS TRANSISTOR Search Results

GBS TRANSISTOR Result Highlights (5)

GBS TRANSISTOR Datasheets Context Search

Leaded Fixed Wirewound Resistors

LTTS e3

EHT COIL

EHT COIL

EHT COIL

TDA9151B

Untitled

Untitled

Untitled

Untitled

Untitled

transistor BD 430

BSD10

BSD12

MM4518

2SC3839K

BSD20

ha 431 transistor

transistor BD 339

depletion MOSFET

STV60N06

xl 3358

UKA720

TDK Power Supply MRW