gc864
Abstract: GC864-PY GC864-QUAD sim 300 gsm module sim 300 gsm gsm 07.05 of GSM sim 300 DTMF and emergency sms SIM holder M2M SIM
Text: wireless solutions GSM | GPRS wireless solutions GC 864-QUAD Compact GC 864-PY Compact QUALITY INVESTMENT PROTECTION The new GC864 product family is one of the smallest GSM/GPRS quad-band modules with industrial connectors in the market. BUSINESS SCALABLE
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864-QUAD
864-PY
GC864
GC864-QUAD
GC864-PY
sim 300 gsm module
sim 300 gsm
gsm 07.05
of GSM sim 300
DTMF and emergency sms
SIM holder
M2M SIM
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vistanet
Abstract: PGC1000 ABB pressure regulator gas chromatograph abb PGC 2000 BUASC2-1-0607 ppm dew point solenoid valve pgc 2000 abb metal detector service manual gas solenoid valve
Text: Data Sheet Process Gas Chromatograph PGC1000 Analyzer Products Field Mounted GC DESCRIPTION STANDARD FEATURES The PGC1000 is a field mounted GC using two analytical trains per analyzer that enable measurements of C1 thru C9+, inerts and H2S in various Hydrocarbon Processing Industry HPI streams.
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PGC1000
PGC1000
BUASC2-1-0607
vistanet
ABB pressure regulator
gas chromatograph
abb PGC 2000
BUASC2-1-0607
ppm dew point
solenoid valve pgc 2000 abb
metal detector service manual
gas solenoid valve
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Untitled
Abstract: No abstract text available
Text: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure
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CXG1081TN
CXG1081TN
15dBm
10-pin
800MHz
10PIN
TSSOP-10P-L01
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10PIN
Abstract: CXG1081TN
Text: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure
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CXG1081TN
CXG1081TN
15dBm
10-pin
800MHz
10PIN
TSSOP-10P-L01
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burndy Y35 Hypress owner manual
Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
Text: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec
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GC-08
YGIBW28-613-2N
YGIBW28-675-2N
YGIBW34-338-2N
YGIBW34-400-2N
YGIBW34-462-2N
YGIBW34-550-2N
YGIBW34-613-2N
YGIBW34-675-2N
YGL29C2
burndy Y35 Hypress owner manual
burndy Y39 Hypress owner manual
Burndy Y35 hypress
burndy Y35
burndy Y750
UL-467
Penetrox A Electric Joint Compound
Y750 REVOLVER HYPRESS
GBM STEP MOTOR
burndy Y750HS user manual
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10PIN
Abstract: CXG1081TN
Text: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure
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CXG1081TN
CXG1081TN
15dBm
10-pin
800MHz
TSSOP-10P-L01
10PIN
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10PIN
Abstract: CXG1111EN GC712 L-367
Text: CXG1111EN 800MHz Band Receive Mixer Description The CXG1111EN is a mixer MMIC for the Japan CDMA cellular. This IC is designed using the Sony’s GaAs J-FET process. Features • High conversion gain: Gc = 13.0dB Typ. • Low noise figure: NF = 4.5dB (Typ.)
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CXG1111EN
800MHz
CXG1111EN
10-pin
10PIN
VSON-10P-01
GC712
L-367
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sony
Abstract: 10PIN CXG1111EN vson-10p-01
Text: CXG1111EN 800MHz Band Receive Mixer Description The CXG1111EN is a mixer MMIC for the Japan CDMA cellular. This IC is designed using the Sony’s GaAs J-FET process. Features • High conversion gain: Gc = 13.0dB Typ. • Low noise figure: NF = 4.5dB (Typ.)
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CXG1111EN
800MHz
CXG1111EN
10-pin
VSON-10P-01
sony
10PIN
vson-10p-01
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Untitled
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
K4J55323QF-GC12
K4J55323QF-Max
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16PIN
Abstract: CXG1050TN L7107
Text: CXG1050TN Receiving Dual-Band Mixer Description The CXG1050TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5dB (Typ.) • Low noise figure NF = 4.9 to 5.2dB (Typ.)
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CXG1050TN
CXG1050TN
15dBm
16-pin
800MHz
16PIN
TSSOP-16P-L01
L7107
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K4D26323RA-GC33
Abstract: GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC36
Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice.
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K4D26323RA-GC
128Mbit
32Bit
144-Ball
K4D26323RA-GC2A
20tCK
15tCK
22tCK
K4D26323RA-GC33
GC33
K4D26323AA-GL
K4D26323RA-GC
K4D26323RA-GC36
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Untitled
Abstract: No abstract text available
Text: K4D26323RA-GC * VDD / VDDQ=2.8V * 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.8 July 2002 Samsung Electronics reserves the right to change products or specification without notice.
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K4D26323RA-GC
128Mbit
32Bit
144-Ball
K4D26323RA-GC33/36
K4D26323RA-GC2A
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Untitled
Abstract: No abstract text available
Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.9 August 2002 Samsung Electronics reserves the right to change products or specification without notice.
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K4D26323RA-GC
128Mbit
32Bit
144-Ball
K4D26323RA-GC2A
20tCK
15tCK
22tCK
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K4D26323RA-GC36
Abstract: GC33 K4D263238A-GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC33
Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.5 December 2001 Samsung Electronics reserves the right to change products or specification without notice.
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K4D26323RA-GC
128Mbit
32Bit
144-Ball
K4D263238A-GC33/40/45/50/55/60
K4D26323RA-GC36
K4D263238A-GC2A
K4D26323RA-GC2A
GC33
K4D263238A-GC33
K4D26323AA-GL
K4D26323RA-GC
K4D26323RA-GC2A
K4D26323RA-GC33
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16PIN
Abstract: CXG1050TN
Text: CXG1050TN Receiving Dual-Band Mixer For the availability of this product, please contact the sales office. Description The CXG1050TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features
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CXG1050TN
CXG1050TN
15dBm
16-pin
16PIN
TSSOP-16P-L01
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L9150
Abstract: 16PIN CXG1109EN
Text: CXG1109EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1109EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)
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CXG1109EN
CXG1109EN
16-pin
16PIN
VSON-16P-01
L9150
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GP318
Abstract: No abstract text available
Text: CXG1082EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 17dB (LNA Typ.)
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CXG1082EN
CXG1082EN
15dBm
16-pin
800MHz
16PIN
VSON-16P-01
GP318
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16PIN
Abstract: CXG1082EN GC1210 sony 330
Text: CXG1082EN Receive Dual Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process.
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CXG1082EN
CXG1082EN
15dBm
16-pin
16PIN
VSON-16P-01
GC1210
sony 330
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E-9843
Abstract: IRF 740 N
Text: SONY CXG 1050TN Receiving Dual-Band Mixer Description The CXG1050TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. Features • High conversion gain Gc = 9.5dB Typ. • Low noise figure NF = 4.9 to 5.2dB (Typ.)
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CXG1050TN
1050TN
16-pin
800MHz
CXG1050TN
16PIN
TSSOP-16P-L01
E-9843
IRF 740 N
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BF772W
Abstract: sot-23 CODE BF 550 SOT143 BF799W HF-transistoren
Text: Transistoren Transistors Hochlinearer Abwärtsm ischer Ultralinear Down Converter Type CMY 200 Maximum Ratings Package Characteristics TA = 25 °C; VD - 5 V / rF = 1224 MH z , / lo = 1185 MHz.yip = 39 MHz, PLQ = 5 dBm Vä V Pm dBm /d Gc ^P3in mA dB dB 6
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OT-323
OT-143
BF772W
OT-343
OT-23
BF799W
sot-23 CODE BF
550 SOT143
HF-transistoren
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SOT323-6
Abstract: BF772W
Text: Transistoren Transistors Hochlinearer Abwärtsmischer Ultralinear Down Converter Maximum Ratings Type Package Characteristics 7"A = 25 °C; VD * 5 V 1224 M H z , / Lo = 1185 MHz ,fF= 39 MHz, PLQ = 5 dBm / RF = T CMY 200 Và V P<„ dBm I<j Gc Ip3in mA dB
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BF772W
BF775A
OT-23
OT-23
OT-323
OT-323
OT-143
SOT323-6
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m073
Abstract: r 3589 C6403
Text: 07/17/9S AMP FftX-> 07 :HI :58 mu ampia n i ZSl EE ü P»ac 00-4 07/ 17/9S 07 :-*2 :-46 AH I> Fftx > —• »>mb w HanciTiaw CM 54 W IWV PCT gC 0 7 3 0 -4 3 4 y g * -«1 f#-.073*.0»C POST TO WITHSTAND 13 NEWTONS 3183.; MIN. A X IA L PORCE in both directions shown without dislomins.
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87/17X35
lllf-22(
t-640399-9
I-640399-6
S40389-9
S40389-8
HTA-156
C-640389
m073
r 3589
C6403
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Untitled
Abstract: No abstract text available
Text: CD 263 BK Series 2000h a t 105°C CD 269 PH CD 11G GW S ta n d a rd 105*0 125*C longer life CD 110 PT CD 287 GC CD 261 LK 1 105”C lo w e r ESR Items C haracteristics O p e ra tin g Tem perature Range *C -40 - +105 -2 5 -+ 1 0 5 V o lta g e Range (V) 6.3 - 250
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2000h
120Hz)
100kHz.
120Hz.
120Hz,
120Hz
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CD 8403
Abstract: ML840 Raytheon Company ML-8403
Text: ML-8403 PAGE I IS S U E D 1 1-63 gÂCHLËg ML-8403 D ESCRIPTIO N AND RATINGS DESCRIPTION T h e M L - 8 4 0 3 is a r u g g e d iz e d , h ig h -m u p la n a r trio d e o f c ap a c ita n ce , h igh tran sco n d u ctan ce an d h igh m u, this tube ce ra m ic -a n d -m etal c o n stru ctio n , d e sig n e d fo r u se as a g rid -
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ML-8403
ML-8403
CD 8403
ML840
Raytheon Company
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