GC1503 Search Results

Contextual Info: GC1503T-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5pì C1/C2 Min. Capacitance Ratio3.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.4k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: GC1503B-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5pì C1/C2 Min. Capacitance Ratio3.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.4k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1503D-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5pì C1/C2 Min. Capacitance Ratio3.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.4k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1503H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5pì C1/C2 Min. Capacitance Ratio3.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.4k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: GC1503A-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5pì C1/C2 Min. Capacitance Ratio3.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.4k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1503E-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5pì C1/C2 Min. Capacitance Ratio3.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.4k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1503EE-+2 Diodes Dual Varactor Diode with Common Anode Ct{Cj} Nom. F Junction Cap.750fì C1/C2 Min. Capacitance Ratio3.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.4k P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-T Mounting StyleS

Contextual Info: GC1503H-+5 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5pì C1/C2 Min. Capacitance Ratio3.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.4k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: GC1503F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5pì C1/C2 Min. Capacitance Ratio3.5 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.4k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

"Tuning Varactors"

Abstract: GC1500 GC1504 GC1507 GC1509 GC1512 GC1613 Scans-0012607
Contextual Info: LORAL/FREÛUENCY/SENICOND Tb J> m 557^21 00007T3 T 7 " — o ? - /? 3Ü-VULT SILICON TUNING VARACTORS 100 DESCRIPTION T h e G C 1 5 0 0 series tuning varactors are silicon abrupt ¡unc­ tio n devices. T hey o ffer th e highest Q and lowest resistance available in 3 0 vo lt tuning diodes.

construction of varactor diode

Abstract: SURFACE MOUNT DIODES MIL GRADE KV2153 GC1310 KV1900 KV1913A KV1923A KV1933A KV1943A KV1953A
Contextual Info: KV1913A – GC1310 ENHANCED PERFORMANCE SURFACE MOUNT EPSM Hyperabrupt Varactor Diodes TM RoHS Compliant DESCRIPTION KEY FEATURES Values • For Frequencies from VHF to 6 GHz • Lower Parasitics  Superior Consistency/Repeatability  Footprints Available for SOT23/

GC1500

Abstract: GC1500A GC1500B GC1501 GC1502 GC1503 GC1504 GC1505 GC1513
Contextual Info: GC1500A – GC1513 TM CONTROL DEVICES 30 Volt Abrupt Junction Tuning Varactors RoHS Compliant The GC1500 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 30 Volt silicon varactor.

Contextual Info: GC1500A – GC1513 TM CONTROL DEVICES 30 Volt Abrupt Junction Tuning Varactors RoHS Compliant The GC1500 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 30 Volt silicon varactor.

KV2123

Contextual Info: KV1913A – GC1310 ENHANCED PERFORMANCE SURFACE MOUNT EPSM Hyperabrupt Varactor Diodes TM RoHS Compliant DESCRIPTION KEY FEATURES Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent

TC2004

Abstract: TC106 GC106 GC2005 GC107 TC307 TC2003 TC2005 MMBD1702 TC2006
Contextual Info: Surface Mount Switching Diodes Part No. TMPD6050 BAV70 BAV99 BAW56 BAV74 TMPD2835 MMBD1701 MMBD1702 MMBD1703 MMBD1704 MMBD1705 MMBD1701A MMBD1703A MMBD1704A MMBD1705A BB804 BB814 BB824 CrossReference Marking Code Max. Cont. Reverse Current Maximum Diode Capacitance

GC1500

Abstract: GC1500A GC1500B GC1501 GC1502 GC1503 GC1504 GC1505 GC1506 GC1507
Contextual Info: L ORAL niCROUAVE-FSI 51E D • 5560130 0000*430 5 7 e! ■ T ~ ¿> 9 30-VOLT SILICON TUNING VARACTORS ELECTRICAL SPECIFICATIONS Ta = 25°C TOTAL CAPACITANCE1 AT -4V, 1 MHz C t-4 (pF) M ODEL NU M BER Q U ALITY FACTOR2 (AT -4V, 50 MHz) Q-4 (MIN) CAPACITANCE RATIO 1

KV38S2

Abstract: KV3201 gc4700 UM7108 UM6606 GC4430 GC1210 GC4213 gc4213 transistor GC4731
Contextual Info: RF/MICROWAVE discretes & modules Microsemi R TM more than solutions - enabling possibilities Solutions l l l l l l l l Microwave Links Base stations Military/avionics Medical/MRI Radar/phase shifters Space / satellite applications V Sat terminals Land mobile radios

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

"Tuning Varactors"

Abstract: "Varactor Diodes" varactors GC1500B GC1501 GC1502 GC1503 GC1504 GC1505 GC1506
Contextual Info: TOC Tuning Varactors 30 VOLT ABRUPT JUNCTION VARACTOR DIODES DESCRIPTION RATINGS The GC1500 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 30 Volt silicon varactor. Minimum Voltage Breakdown: 30 V at 10µA