Contextual Info: GC1513T-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: GC1513D-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1513EE-+2 Diodes Dual Varactor Diode with Common Anode Ct{Cj} Nom. F Junction Cap.5pì C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.2.0k P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-T Mounting StyleS

Contextual Info: GC1513H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew

GC1500

Abstract: GC1500A GC1500B GC1501 GC1502 GC1503 GC1504 GC1505 GC1513
Contextual Info: GC1500A – GC1513 TM CONTROL DEVICES 30 Volt Abrupt Junction Tuning Varactors RoHS Compliant The GC1500 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 30 Volt silicon varactor.

Contextual Info: GC1500A – GC1513 TM CONTROL DEVICES 30 Volt Abrupt Junction Tuning Varactors RoHS Compliant The GC1500 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 30 Volt silicon varactor.

Contextual Info: GC1513F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: GC1513B-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1513A-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1513E-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10pì C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

"Tuning Varactors"

Abstract: GC1500 GC1504 GC1507 GC1509 GC1512 GC1613 Scans-0012607
Contextual Info: LORAL/FREÛUENCY/SENICOND Tb J> m 557^21 00007T3 T 7 " — o ? - /? 3Ü-VULT SILICON TUNING VARACTORS 100 DESCRIPTION T h e G C 1 5 0 0 series tuning varactors are silicon abrupt ¡unc­ tio n devices. T hey o ffer th e highest Q and lowest resistance available in 3 0 vo lt tuning diodes.

C1914

Contextual Info: GflSD electron ics m e G C S e r ie s ELECTRICAL CHARACTERISTICS (TA= 2 5 °C R i w m Breakdown Voltage ( min) Vr Reverse Voltage Leakage Current (max) Capacitance Temperature C oefficien t (typl unless otherwise noted) 30 V dc 9 I r = 1 0 u A d c T CC

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

GC1500

Abstract: GC1500A GC1500B GC1501 GC1502 GC1503 GC1504 GC1505 GC1506 GC1507
Contextual Info: L ORAL niCROUAVE-FSI 51E D • 5560130 0000*430 5 7 e! ■ T ~ ¿> 9 30-VOLT SILICON TUNING VARACTORS ELECTRICAL SPECIFICATIONS Ta = 25°C TOTAL CAPACITANCE1 AT -4V, 1 MHz C t-4 (pF) M ODEL NU M BER Q U ALITY FACTOR2 (AT -4V, 50 MHz) Q-4 (MIN) CAPACITANCE RATIO 1

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

"Tuning Varactors"

Abstract: "Varactor Diodes" varactors GC1500B GC1501 GC1502 GC1503 GC1504 GC1505 GC1506
Contextual Info: TOC Tuning Varactors 30 VOLT ABRUPT JUNCTION VARACTOR DIODES DESCRIPTION RATINGS The GC1500 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 30 Volt silicon varactor. Minimum Voltage Breakdown: 30 V at 10µA

gunther reed relay

Abstract: Gunther relay Gunther - Reed Relays Reed Switch gunther GC2722 GC3823 GC3436 GC1525 GC3525 ORD228VL
Contextual Info: Actuation of Reed Switches with a Permanent Magnet Examples of switching with the use of a moving magnet. The Comus International group of companies consists of: Rotation: Examples of switching through rotational movement. Direct Actuation: N N S Closed