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    GE 13003 Search Results

    GE 13003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10061913-003CLF Amphenol Communications Solutions PCI Express® GEN 3 Card Edge, Storage and Server Connector, Vertical, Surface Mount, x16, 164 Positions, 1.00mm (0.039in) Pitch Visit Amphenol Communications Solutions
    75188-130-03LF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Vertical header, Through Hole, Single Row, 3 Positions, 5.08mm (0.200in) Pitch. Visit Amphenol Communications Solutions
    10077213-003LF Amphenol Communications Solutions HCI® Connector System, Power Supply Connectors, 4DC+24S+4DC Right Angle Header. Visit Amphenol Communications Solutions
    10082378-13003TLF Amphenol Communications Solutions PCI Express® GEN 3 Card Edge, Storage and Server Connector, Vertical, Press-Fit, x16, 164 Positions, 1.00mm (0.039in) Pitch Visit Amphenol Communications Solutions
    PSAS5F3130031TR Amphenol Communications Solutions SAS PCIe,Storage connectors, PSAS 5.0, 68pin, Vertical, Receptacle, blade hold down Visit Amphenol Communications Solutions

    GE 13003 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GE13003 GTM NPN SILICON POWER TRANSISTOR Original PDF

    GE 13003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NFC 63-140

    Abstract: 114FCT03T IUGU-B411 13007-2 e 13007-2 IMGL-B411 IUGU-B211 limit SWITCHES ge 114fct IEC 60947-5-1 limit switch ex d IMGP-B311
    Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical


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    PDF 114FCT H-1340 B-9000 C/4601/E/EX NFC 63-140 114FCT03T IUGU-B411 13007-2 e 13007-2 IMGL-B411 IUGU-B211 limit SWITCHES ge 114fct IEC 60947-5-1 limit switch ex d IMGP-B311

    18l0015wh

    Abstract: 18L0012WH 9L11XPB015S Heavy Duty Distribution Arresters 9L20 18L0065WH relay 04501 9L15ECC001 0-650 VAC 3 Pole 18L0009WH 54L514 GED-7060A
    Text: Capacitors, Arresters and Harmonic Filters Line/Load Reactors—up to Line/Load Reactors—Three-phase Reactors .20-4 Matrix Series D Harmonic Filters .20-6


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    13003 charger

    Abstract: No abstract text available
    Text: LR5810 LR5810 Description The LR5810 series switc her ICs cost effectively rep lace all power supplies up to 5W output power based on unregulated is olated linear transformer 50/ 60HZ . Unlike conventional PWM (pulse width modulation) controllers, they regulate the output voltage in a ne w method of off-time modulation control. The co ntroller


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    PDF LR5810 LR5810 LR5810-AL LR5810-BL OT-26 OT-26 13003 charger

    me 13003

    Abstract: ar 13003 HN62412P TU F 13003
    Text: H I T A C H I / L O G I C / A R R A Y S / M E M DM DËJ 0013003 0 04E 13003 4496203 HITACHI/ L OG IC / A R R A Y S/ M E M HN62412P- -P V Ó -/ J -/ 3 " 131072-word x 16-bit/262144-word x 8-bit CM O S Mask Programmable Read Only Memory The HN62412P is a 2-Mbit CMOS mask-programmable ROM


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    PDF HN6241 HN62412P HN62412P, 200ns 100mW D15/A-1 me 13003 ar 13003 TU F 13003

    2N5576

    Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
    Text: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12


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    PDF diff15 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2N5576 MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A

    MHT1810

    Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MHT1810 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534

    MP2143

    Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2143 MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235

    transistor TF78

    Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 transistor TF78 AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202

    RT3062

    Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 RT3062 BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685

    A400M

    Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 A400M ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    TI3028

    Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 TI3028 TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A

    AD166

    Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT


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    KL8503

    Abstract: CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 KL8503 CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package

    2SC102 transistor

    Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2SC102 transistor 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558

    B170008

    Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 B170008 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005

    2N2128

    Abstract: T4 0660 2N5577 2N5579 MD38
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2N2128 T4 0660 2N5577 2N5579 MD38

    ZT2015

    Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 ZT2015 SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    radiall mecha

    Abstract: No abstract text available
    Text: ! HI r a d i a l i n#y Fibre Optic Components T it le TECHNICAL DATA SHEET F 715 091 000 DUPLEX PLUG Series EC Dimensions : mm Issue : 06 19 97 Page 1/1 25.2 MAXI < (* Dimension indicated for a plug equiped with it s fe rru le -t) CO ti fl fì fl R -


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    PDF 12345Plug F70O531OOO radiall mecha

    F7805

    Abstract: No abstract text available
    Text: l " i $ ra d ia li l ! Title F 715 090 000 TECHNICAL DATA SHEET Fibre Optic Components DUPLEX PLUG Dimensions Series EC lb MAXI : mm Issue : 06 19 97 Page 1/1 56 MAXI* -X * Dimension indicated for a plug equiped with its ferrule Trcrtrtnr <c CD -O J CONTENTS


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    PDF 12345Plug F96068 F780531000 F7805

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    MP2143A

    Abstract: MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. 1532t MP1532At MP1533t MP1534At MP2143A MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300

    Untitled

    Abstract: No abstract text available
    Text: DIAMOND Fiber Optic Components Specifications: S in g le mode In s e rtio n loss IL ty p 0 .2 m a x 0.4 dB IEC 1300-3-4; A,= 13Q0/1550nm m in 40 m in 7 0 * dB IEC 1300-3-6; X = 1300/1550nm m a x ±0.1 m a x ±0.1 m a x ±0.1 dB O ver s e rv ic e life S e rvice life


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    PDF 13Q0/1550nm 1300/1550nm 22/YX