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    GE 953 Search Results

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    GE 953 Price and Stock

    Texas Instruments TCA9535MRGER

    Interface - I/O Expanders 16-bit 1.65- to 5.5-V I2C/SMBus I/O expander with interrupt & config registers 24-VQFN -40 to 85
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TCA9535MRGER 7,804
    • 1 $1.12
    • 10 $0.858
    • 100 $0.791
    • 1000 $0.698
    • 10000 $0.638
    Buy Now

    Texas Instruments PCA9535RGER

    Interface - I/O Expanders 16-Bit I2C & SMBus Lo-Pwr I/O Expander
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PCA9535RGER 3,897
    • 1 $1.72
    • 10 $1.09
    • 100 $0.952
    • 1000 $0.812
    • 10000 $0.706
    Buy Now

    Macronix International Co Ltd MX35LF2GE4AD-Z4I-TR

    NAND Flash Serial NAND 3V 2Gbit x4 WSON ECC-Free
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MX35LF2GE4AD-Z4I-TR 3,083
    • 1 $3.64
    • 10 $2.97
    • 100 $2.81
    • 1000 $2.66
    • 10000 $2.39
    Buy Now

    Texas Instruments TCA9539RGER

    Interface - I/O Expanders Remote 16bit I2C and SMBux
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TCA9539RGER 2,828
    • 1 $1.89
    • 10 $1.2
    • 100 $1.05
    • 1000 $0.885
    • 10000 $0.779
    Buy Now

    Macronix International Co Ltd MX35LF1GE4AB-Z4I-TR

    NAND Flash Serial NAND 3V 1Gbit x4 WSON ECC-Free
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MX35LF1GE4AB-Z4I-TR 2,733
    • 1 $2.88
    • 10 $2.33
    • 100 $2.13
    • 1000 $2.13
    • 10000 $1.87
    Buy Now

    GE 953 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc 541

    Abstract: GE capacitors 0280 130 026 GE capacitors GEC004 GE 23a capacitors 0523a 10 micro farad 25 v electrolytic capacitor BB EI 382 0179 BE EI 382 0179 295A6016P33
    Text: GEC 004 2009 Power Electrolytic Capacitors GE Capacitors by Regal-Beloit 1946 West Cook Road, Fort Wayne, Indiana 46818 USA 260 416-5460 Email: capacitors@regalbeloit.com GEC Phone: – 02(260) / 09 416-5400 Fax: www.gecapacitors.com www.gecapacitors.com


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    PDF CPD-517 GEC-005 CPD-518, GEC-006 PLC-001 bc 541 GE capacitors 0280 130 026 GE capacitors GEC004 GE 23a capacitors 0523a 10 micro farad 25 v electrolytic capacitor BB EI 382 0179 BE EI 382 0179 295A6016P33

    S1D15700

    Abstract: No abstract text available
    Text: PF952-02 S1C88409 8-bit Single Chip Microcomputer ge oltan V o Lowerati ts p c u O od Pr ● Original Architecture Core CPU ● Low Current Consumption ● Wide-range Operating Voltage 1.8V to 5.5V ● High Speed Operation in Low Voltage ● A/D Converter


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    PDF PF952-02 S1C88409 S1C88409 S1C88 S1D15700

    E0C88409

    Abstract: SED1635
    Text: PF952-01 E0C88409 8-bit Single Chip Microcomputer ge oltan V o Lowerati ts p c u O od Pr ● Original Architecture Core CPU ● Low Voltage Operation 1.8V min. ● High Speed Operation (0.48µsec/3.0V) ● Built-in LCD Controller ● Built-in Touch Panel Controller


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    PDF PF952-01 E0C88409 10bit E0C88409 SED1635

    035H

    Abstract: IRFPE30
    Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF IRG4PC30UDPbF O-247AC IRFPE30 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF IRG4PC30UDPbF O-247AC IRFPE30

    transistor VCE 1000V

    Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
    Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF IRG4PC30UDPbF O-247AC IRFPE30 transistor VCE 1000V TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30

    IRG4PC50FPBF

    Abstract: 035H IRFPE30
    Text: PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


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    PDF IRG4PC50FPbF O-247AC O-247AC IRFPE30 IRG4PC50FPBF 035H IRFPE30

    le 78a

    Abstract: 035H IRFPE30
    Text: PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


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    PDF IRG4PC50FPbF O-247AC O-247AC IRFPE30 le 78a 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: 11.10.2003 8:06 Uhr Seite C.1 Terminals / Tension clamp connection Terminals / Z-Series Overview / Z-Series C.2 - C.3 Feed-through terminals Standard model Roof-Style C.4 - C.17 C.18 - C.23 PE terminals Standard model Roof-Style C.24 - C.31 C.32 - C.37 Disconnect terminals


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    PDF C001-C003

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 37E î> 430E271 00 57 1 3 6 4 Optoelectronic Sp e c ific a tio n s_ IHAS T-m-33 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide


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    PDF 430E271 T-m-33 4N35-4N36-4N37 E51868 S-42662 92CS-429S1

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 Optoelectronic Specifications D E 3 a ? S 0 a i 001%flD 7 I Photon Coupled Isolator4N38,4N38A MIN. Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line


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    PDF Isolator4N38 4N38A 4N38A 0110b

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS SEM IC O ND SECTOR 37E ]> 4302271 D02733Ö 1 B IH A S Optoelectronic Specifications. T -Hi-53 Photon Coupled Isolator MCT210 G aA s In fra re d E m ittin g Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT210 is a gallium arsenide, infrared emitting


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    PDF D02733Ã -Hi-53 MCT210 MCT210 E51868 92CS-42662 92CS-428S1

    2SC5012-T1

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


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    PDF 2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1

    H11A10

    Abstract: aaan D41K1 threshold switch H17A1 BRX 70
    Text: G E SOLID STATE □1 DE I 3 Ö 7 S 0 Ö 1 D O n b T D 0 uptqeiectronlc Specifications 7 ' - V / - S ’3 PHOTON COUPLED CURRENT THRESHOLD SWITCH H11A10 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H 11A 10 is a gallium arsenide infrared emitting diode coupled with a silicon


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    PDF H11A10 -7lCI06B aaan D41K1 threshold switch H17A1 BRX 70

    Untitled

    Abstract: No abstract text available
    Text: P S E SOLID STATE 01 DE | 3 ñ 7 S 0 ñ l _ 0 D n f l 7 t i Optoelectronic Specifications. T -m-Z3 Photon Coupled Isolator M CT210 GaAs Infrared Emitting Diode & NPN Silicon Photo-lVansistor , M IL L I M E T E R S M IN The GE Solid State MCT210 is a gallium arsenide, infrared emitting


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    PDF CT210 MCT210 MCT210

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS SEM IC O N D SECTOR 3?E V m 43QE271 G027172 4 I HAS Optoelectronic Specifications Photon C oupled Isolator H11B1,H11B2,H11B3 S Y Ï.B O L - M IN Ga As Infrared E m ittin g D iode & NPN Silicon P hoto-D arlington A m plifier The GE Solid State H 11B 1, H 11B2 and H 11B3 are gallium arsenide,


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    PDF 43QE271 G027172 H11B1 H11B2 H11B3 S-42662 92CS-429S1

    H11F1 HARRIS

    Abstract: No abstract text available
    Text: 38 75 081 G E S O L I D ST A T E 01E 19728 Optoelectronic Specifications_ HA RR IS S E M I C O N D S E C T O R 37E D H11F1, H11F2, I 4 3 Ü2 27 1 O G S T n O IHAS b H11F3 Photon Coupled Bilateral Analog FET The GE Solid State H11F family consists of a gallium arsenide infrared emitting


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    PDF H11F1, H11F2, H11F3 92CS-42662 92CS-429S1 H11F1 HARRIS

    XJ100

    Abstract: RG316B
    Text: D 71E SBDnSO □ □ G O ‘3 2 7 bôS Bauform/Style M P o lza h l/N u m b e r o f contacts m ax- 78 N F-Standard + 2 S o nd erkon takte/s p e c ia l con tacts 2 4 N F-Standard + 8 S on d e rk o n ta k te /s p e c ia l contacts Fett ge druckte B estell-N um m ern = Vorzugstypen.


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    PDF 25V--/150V XJ100 RG316B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 4 bE » • ti3tj72SH 00=12470 3 ■ MOTfc, MOTOROLA i S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products NPN Silicon Power Transistors M J6274 M J6277 DM0 Suffixes: /#///#/ HX, HXV Processed per MIL-S-19500/xxx . d e sign e d for ge n e ra l-p u rp o se p o w e r sw itch in g and am plifier applications


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    PDF ti3tj72SH J6274 J6277 MIL-S-19500/xxx MJ6274 O-116)

    ECG953

    Abstract: ecg 223 ecg voltage regulator 3v ECG954 ECG378
    Text: i PHILIPS E C G INC 17E ECG Semiconductors m ? A - bbSBiaû QQ05137 3 ECG 953, ECG 954 Adjustable Pos and Neg Voltage Regulators E C G 9 5 3 - Positive Voltage Regulator E C G 9 5 4 - Negative Voltage Regulator Features • O utput current in e x ce ss of 1 A


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    PDF QQ05137 ECG953/954 ECG953 ecg 223 ecg voltage regulator 3v ECG954 ECG378

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 33E D 0S0M33fl 0 0 0 5 5 75 1 •A.L GR S L A I'Z Î 953 M ÏK p  88â: COMPEIAN FULL-BRIDGE PWM MOTOR DRIVER NO CONNECTION 5NNECT10N ANODES V REp0R AK E PHASE RC TIMING LOGIC SUPPLY NO CONNECTION Dwg. PM-004 ABSOLUTE MAXIMUM RATINGS


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    PDF 0S0M33fl 5NNECT10N PM-004 M-004

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643