bc 541
Abstract: GE capacitors 0280 130 026 GE capacitors GEC004 GE 23a capacitors 0523a 10 micro farad 25 v electrolytic capacitor BB EI 382 0179 BE EI 382 0179 295A6016P33
Text: GEC 004 2009 Power Electrolytic Capacitors GE Capacitors by Regal-Beloit 1946 West Cook Road, Fort Wayne, Indiana 46818 USA 260 416-5460 Email: capacitors@regalbeloit.com GEC Phone: – 02(260) / 09 416-5400 Fax: www.gecapacitors.com www.gecapacitors.com
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CPD-517
GEC-005
CPD-518,
GEC-006
PLC-001
bc 541
GE capacitors
0280 130 026
GE capacitors GEC004
GE 23a capacitors
0523a
10 micro farad 25 v electrolytic capacitor
BB EI 382 0179
BE EI 382 0179
295A6016P33
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S1D15700
Abstract: No abstract text available
Text: PF952-02 S1C88409 8-bit Single Chip Microcomputer ge oltan V o Lowerati ts p c u O od Pr ● Original Architecture Core CPU ● Low Current Consumption ● Wide-range Operating Voltage 1.8V to 5.5V ● High Speed Operation in Low Voltage ● A/D Converter
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PF952-02
S1C88409
S1C88409
S1C88
S1D15700
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E0C88409
Abstract: SED1635
Text: PF952-01 E0C88409 8-bit Single Chip Microcomputer ge oltan V o Lowerati ts p c u O od Pr ● Original Architecture Core CPU ● Low Voltage Operation 1.8V min. ● High Speed Operation (0.48µsec/3.0V) ● Built-in LCD Controller ● Built-in Touch Panel Controller
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PF952-01
E0C88409
10bit
E0C88409
SED1635
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035H
Abstract: IRFPE30
Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
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transistor VCE 1000V
Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
transistor VCE 1000V
TO-247AC Package
12A H3
irf 150 equivalent
035H
IRFPE30
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IRG4PC50FPBF
Abstract: 035H IRFPE30
Text: PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PC50FPbF
O-247AC
O-247AC
IRFPE30
IRG4PC50FPBF
035H
IRFPE30
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le 78a
Abstract: 035H IRFPE30
Text: PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PC50FPbF
O-247AC
O-247AC
IRFPE30
le 78a
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: 11.10.2003 8:06 Uhr Seite C.1 Terminals / Tension clamp connection Terminals / Z-Series Overview / Z-Series C.2 - C.3 Feed-through terminals Standard model Roof-Style C.4 - C.17 C.18 - C.23 PE terminals Standard model Roof-Style C.24 - C.31 C.32 - C.37 Disconnect terminals
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C001-C003
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E î> 430E271 00 57 1 3 6 4 Optoelectronic Sp e c ific a tio n s_ IHAS T-m-33 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide
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430E271
T-m-33
4N35-4N36-4N37
E51868
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: G E SOLID STATE 01 Optoelectronic Specifications D E 3 a ? S 0 a i 001%flD 7 I Photon Coupled Isolator4N38,4N38A MIN. Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line
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Isolator4N38
4N38A
4N38A
0110b
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Untitled
Abstract: No abstract text available
Text: H A R R IS SEM IC O ND SECTOR 37E ]> 4302271 D02733Ö 1 B IH A S Optoelectronic Specifications. T -Hi-53 Photon Coupled Isolator MCT210 G aA s In fra re d E m ittin g Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT210 is a gallium arsenide, infrared emitting
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D02733Ã
-Hi-53
MCT210
MCT210
E51868
92CS-42662
92CS-428S1
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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H11A10
Abstract: aaan D41K1 threshold switch H17A1 BRX 70
Text: G E SOLID STATE □1 DE I 3 Ö 7 S 0 Ö 1 D O n b T D 0 uptqeiectronlc Specifications 7 ' - V / - S ’3 PHOTON COUPLED CURRENT THRESHOLD SWITCH H11A10 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H 11A 10 is a gallium arsenide infrared emitting diode coupled with a silicon
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H11A10
-7lCI06B
aaan
D41K1
threshold switch
H17A1
BRX 70
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Untitled
Abstract: No abstract text available
Text: P S E SOLID STATE 01 DE | 3 ñ 7 S 0 ñ l _ 0 D n f l 7 t i Optoelectronic Specifications. T -m-Z3 Photon Coupled Isolator M CT210 GaAs Infrared Emitting Diode & NPN Silicon Photo-lVansistor , M IL L I M E T E R S M IN The GE Solid State MCT210 is a gallium arsenide, infrared emitting
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CT210
MCT210
MCT210
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Untitled
Abstract: No abstract text available
Text: H A R R IS SEM IC O N D SECTOR 3?E V m 43QE271 G027172 4 I HAS Optoelectronic Specifications Photon C oupled Isolator H11B1,H11B2,H11B3 S Y Ï.B O L - M IN Ga As Infrared E m ittin g D iode & NPN Silicon P hoto-D arlington A m plifier The GE Solid State H 11B 1, H 11B2 and H 11B3 are gallium arsenide,
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43QE271
G027172
H11B1
H11B2
H11B3
S-42662
92CS-429S1
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H11F1 HARRIS
Abstract: No abstract text available
Text: 38 75 081 G E S O L I D ST A T E 01E 19728 Optoelectronic Specifications_ HA RR IS S E M I C O N D S E C T O R 37E D H11F1, H11F2, I 4 3 Ü2 27 1 O G S T n O IHAS b H11F3 Photon Coupled Bilateral Analog FET The GE Solid State H11F family consists of a gallium arsenide infrared emitting
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H11F1,
H11F2,
H11F3
92CS-42662
92CS-429S1
H11F1 HARRIS
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XJ100
Abstract: RG316B
Text: D 71E SBDnSO □ □ G O ‘3 2 7 bôS Bauform/Style M P o lza h l/N u m b e r o f contacts m ax- 78 N F-Standard + 2 S o nd erkon takte/s p e c ia l con tacts 2 4 N F-Standard + 8 S on d e rk o n ta k te /s p e c ia l contacts Fett ge druckte B estell-N um m ern = Vorzugstypen.
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25V--/150V
XJ100
RG316B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4 bE » • ti3tj72SH 00=12470 3 ■ MOTfc, MOTOROLA i S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products NPN Silicon Power Transistors M J6274 M J6277 DM0 Suffixes: /#///#/ HX, HXV Processed per MIL-S-19500/xxx . d e sign e d for ge n e ra l-p u rp o se p o w e r sw itch in g and am plifier applications
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ti3tj72SH
J6274
J6277
MIL-S-19500/xxx
MJ6274
O-116)
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ECG953
Abstract: ecg 223 ecg voltage regulator 3v ECG954 ECG378
Text: i PHILIPS E C G INC 17E ECG Semiconductors m ? A - bbSBiaû QQ05137 3 ECG 953, ECG 954 Adjustable Pos and Neg Voltage Regulators E C G 9 5 3 - Positive Voltage Regulator E C G 9 5 4 - Negative Voltage Regulator Features • O utput current in e x ce ss of 1 A
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QQ05137
ECG953/954
ECG953
ecg 223
ecg voltage regulator 3v
ECG954
ECG378
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 33E D 0S0M33fl 0 0 0 5 5 75 1 •A.L GR S L A I'Z Î 953 M ÏK p  88â: COMPEIAN FULL-BRIDGE PWM MOTOR DRIVER NO CONNECTION 5NNECT10N ANODES V REp0R AK E PHASE RC TIMING LOGIC SUPPLY NO CONNECTION Dwg. PM-004 ABSOLUTE MAXIMUM RATINGS
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0S0M33fl
5NNECT10N
PM-004
M-004
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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