pinol
Abstract: 10GBASE-LR GR-1089-CORE DS5155
Text: Preliminary Datasheet SPP-DR-LR-CDFA Features Support GE and 10GE applications Up to 10km transmission on SMF 1310nm DFB laser and PIN receiver SFI high speed electrical interface 2-wire interface with integrated Digital Diagnostic monitoring
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1310nm
MIL-STD-883E
DS-5155
pinol
10GBASE-LR
GR-1089-CORE
DS5155
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1.25G 850NM
Abstract: GR-1089-CORE
Text: Preliminary Datasheet SPP-DR-SR-CDFA Features Support GE and 10GE applications Up to 300m transmission distance at 10.3Gbps on 50 m MMF 2000MHz.km Up to 550m transmission distance at 1.25Gbps on 50μm MMF (500MHz.km) 850nm VCSEL and PIN receiver
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2000MHz
25Gbps
500MHz
850nm
MIL-STD-883E
DS-5153
1.25G 850NM
GR-1089-CORE
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GE thyristor
Abstract: ge-2 transistor DR-6 GE DR6GE Transistor GE 67 ge-10 transistor proximity capactive sensor GE power SCR DR3GE Ge NPN
Text: Proximity Sensors Capacitive Steel Housing Types DR GE, M 14, PG 21, 13/8" • Steel housing, cylindrical • Diameter: M 14, PG 21, 1 3/8" • Sensing distance: 3 to 10 mm • Power supply: 10 to 27 VDC 90 to 240 VAC • LED-indication for output ON AC types
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Untitled
Abstract: No abstract text available
Text: CCD Linear Image Sensor MN3673RE Color CCD Linear Image Sensor with 2592 Bits each for R, G, and B Colors • Overview ■ Pin Assignments M Di ain sc te on na tin nc ue e/ d The MN3673RE is a 2592-pixel high sensitivity CCD linear image sensor combining photo-sites using low dark output floating
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MN3673RE
MN3673RE
2592-pixel
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65997-05-9
Abstract: vid 200
Text: Sida: 1 / 5 Varuinformationsblad Enligt 91/155/EEG Datum för utskriften: 20.01.2003 Omarbetat: 06.11.2001 1 Namnet på produkten och företaget • Produktuppgifter · Handelsnamn: 256-;276 Sn95,5/Ag3,8-4%/Cu0,5-0,7% · Artikelnummer: 7119 · Ämnets användning / tillredningen Lödlegering
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91/155/EEG
D-82216
65997-05-9
vid 200
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SN62 PB36 ag2
Abstract: SN62 PB36 ag2 kester SN63 PB36 SN63 PB37 gefstoffv PB36 kester 256 omar SN62 MP Sn62Pb36Ag2
Text: Sida: 1 / 5 Varuinformationsblad Enligt 91/155/EEG Datum för utskriften: 07.11.2002 Omarbetat: 07.11.2002 1 Namnet pä produkten och företaget • Produktuppgifter · Handelsnamn: 256-; 276 Sn62/Pb36/Ag2,Sn63/Pb37 · Artikelnummer: 7087 · Ämnets användning / tillredningen Lödlegering
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91/155/EEG
Sn62/Pb36/Ag2
Sn63/Pb37
D-82216
SN62 PB36 ag2
SN62 PB36 ag2 kester
SN63 PB36
SN63 PB37
gefstoffv
PB36
kester 256
omar
SN62 MP
Sn62Pb36Ag2
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25F60CPM
Abstract: No abstract text available
Text: PowerMOSFET •外観図 F25F60CPM OUTLI NE Package：FTO220A （3pi n） ロット記号 （例） Date code 600V25A t ：mm Uni 4.5 10.０ 品名略号 Type No. 0000 25F60CPM ３.45 煙高耐圧 煙低オン抵抗 煙高速スイッチング 15.０ （例）
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25F60CPM
25F60CPM
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SD 4060
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 86 N E-Cu-rope 0,5mm² Siliconcoat red 8,4 C E-Cu-rope 0,5mm² Siliconcoat yellow Plug 6,3 x 0,8 E-Cu-cable 25mm² Silicon tube red SW27 A M12 VWK Aug. 1996 T 86 N Elektrische Eigenschaften
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SD 4060
Abstract: DSE 130 -10A
Text: European PowerSemiconductor and Electronics Company Marketing Information T 86 N E-Cu-rope 0,5mm² Siliconcoat red 8,4 C E-Cu-rope 0,5mm² Siliconcoat yellow Plug 6,3 x 0,8 E-Cu-cable 25mm² Silicon tube red SW27 A M12 VWK Aug. 1996 T 86 N Elektrische Eigenschaften
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DSE 130 -10A
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 86 N E-Cu-rope 0,5mm² Siliconcoat red 8,4 C E-Cu-rope 0,5mm² Siliconcoat yellow Plug 6,3 x 0,8 E-Cu-cable 25mm² Silicon tube red SW27 A M12 VWK Aug. 1996 T 86 N Elektrische Eigenschaften
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vc-6v3
Abstract: BA6238
Text: rx 04 DO GE Uklad scalony duzej skali integracji IX 04 D O GE jest procesorem SYSCO N /astosow anym w odtw arzaczu z m ozliw osci^ nagryw ania SHARP VC-6V3 DR. Steruje ukladem s ervo IX 03222 GE, a przez uklad BA 6238 silnikami Lidowania kasety i tasmy. Taktowany jest zegarem o cz^stotliw osci 4 M Hz,
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ECG1610
Abstract: ECG1510 DECG1510 VITA 1300 application note
Text: PHILIPS E C G INC 17E 1 ^ 5 3 ^ 0 G00SSS7 5 • 7 ' \ 5 ^ ' - j 3 ' 0 7 Q ■ ECG1510 V o lta ge Level Ind. Dr., 5 Step O utput for LED , Linear Scale Sem iconductors .Iie" 3.0>- ,768"tl9.5 M A X. Features • Bar-type display of Input level using 5 LEDs
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G00SSS7
ECG1510
4to18V
ECG151Q
drop-10
ECQ1510
ECG1610
ECG1510
DECG1510
VITA 1300 application note
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PDF
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Untitled
Abstract: No abstract text available
Text: IB NtCAUS ORON. DATA B U T A I » IN THIS DOQJ P f f I S PBOPHIETARY TE T H XfE TBI BJ3CTRtMtCS INC. AW SHALL NOT GE n r m n w r Q FIBD DR USED FOB p w w B B B f f OB MAMFACTURE VXTHUT B n B S WITTEN PBMISSXIM. REV F OASH NO CONN TYPE A DIM 1.773 ±.030 PL0O
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TAI-124
844RECOMMENPED
BJB9F-B232
5-17-S6
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2142P
Abstract: IC ssm2142 SM2141 SSM2142
Text: ANALOG DEVICES Balanced Line Driver SSM2142 FEATURES T r a n s f o r m e r - L i k e Bal an ced O u t p u t Dr i v e s 10 V RMS I nt o a 600 12 Load St ab l e W h e n D r i v i n g Lar ge Ca p a c i t i v e L o a d s and Long Cabl es FUNCTIONAL BLOCK DIAGRAM
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16-Lead
2142P
IC ssm2142
SM2141
SSM2142
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Untitled
Abstract: No abstract text available
Text: 7 DRAWI NG MADE THIS IN DRAWI NG THIRD 15 ANGLE UNPUBLI 5HED COPYRI GHT 19 6 5 2 3 4 PROJ ECTI ON RELEASED BY AMP FOR P U B L I C A T I O N INCORPORATED. A LL I N T E R N A T I ON A L DI ST LOC 19 AD RI GHTS RESERVED. 25 REV I 5 I 0 N 5 ZONE LTR D E 5 C R I F T I ON
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/home/amp40973/edmmod
amp40973
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Untitled
Abstract: No abstract text available
Text: ARK-LES CORPORATION PAST »»ME: R I NG TERM I NAL . 250 I 40 I I0 I 45 I I5 . 440 FIGURE FEED I S T A N D A R D R E E L I NG if, f . 4 0 0 0 4G I - 5 FIGURE REVERSE (I.E. FIGURE 2 REELING 4 0 0 0 ,4GI - 5 R ) 3 T I N E S DOWN W/REVERSE REELING (I.E.
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MC 790 P
Abstract: 1D-10A
Text: Æ lltro n 3301 ELECTRONICS WAY. T E L : 407 848-4311 N-CHANNEL ENHANCEMENT MOS FET 4 0 0 V, 1O A , 0 . 5 6 n SDF340 SDF340 dr -CD VDSS 400 V dc VDGR 400 V dc VGS ±20 Vdc Gate-Source Voltage C o n ( i nuous Drain Current Continuous ( T c = 25° C) SCHEMATIC
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SDF340
SDF340
MC 790 P
1D-10A
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Untitled
Abstract: No abstract text available
Text: OIXYS PRELIMINARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C
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IXGH28N30A
IXGH28N30AS
O-247
28N30AS)
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Untitled
Abstract: No abstract text available
Text: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance • Rds = 45 m ii typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline T O -2 2 0 F M Absolute Maximum Ratings Ta = 25 °C
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2SK3148
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Untitled
Abstract: No abstract text available
Text: 2SK1880 L , 2SK1880 S Silicon N C h a n n e l M O S F E T Application DPAK-1 High speed power switching Features • • • • Low on—resistance High speed switching No secondary breakdown Suitable for Switching regulator 1. 2. 3. 4. Table 1 Absolute Maximum Ratings Ta = 25 ° C
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2SK1880
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Untitled
Abstract: No abstract text available
Text: 7 DRAWI NG MADE THIS IN DRAWI NG THIRD 15 ANGLE UNPUBLI 5HED COPYRIGHT 6 5 19 RELEASED BY AMP 3 4 2 <3> PROJ E CT I ON FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST L OC 1 9 R E V AD RESERVED. DIA 2 25 PLC ZONE I 5 I 0 N 5 DE5CR[PTION
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AD4218
12-OCT-O!
amp40973
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K1202
Abstract: 2SK19-Y 2SK19GR DG-34 transistor 2SK19Y 40468 C682A 2N625 NS1110 DFNA3-100
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
B170024
4000n
K1202
2SK19-Y
2SK19GR
DG-34 transistor
2SK19Y
40468
C682A
2N625
NS1110
DFNA3-100
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Untitled
Abstract: No abstract text available
Text: OIXYS PRELIMINARY DATA SHEET IXGH28N30 IXGH28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C
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IXGH28N30
IXGH28N30S
TQ-247
28N30S)
O-247
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BSM15GD100D
Abstract: C160 004S7 VM305171
Text: bGE D • fl235bG5 0DMS712 Tb3 ■ SIEG SIEMENS SIENENS AKTIENûESELLSCHAF ~TïJ3rC7 IGBT Module BSM15GD100D Preliminary Data V CE = 1000 V = 6 x 25 A at Tc = / c = 6 x 15 A at T c = 80 ‘C Ic • • • • • 25 C Power m odule 3-phase full bridge Including fast free-wheel diodes
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BSM15GD100D
VM305171
C67076-A2500-A2
235b05
125-C
BSM15GD100D
C160
004S7
VM305171
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