IXGH28N30A Search Results

IXGH28N30A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGH28N30A		IXYS	HiPerFAST IGBT		Original	PDF

IXGH28N30A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXGD32N60B-5X Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43	Original	PDF	IXGD28N30-43 IXGD40N30-5X IXGD12N60B-3X IXGD31N60-4X IXGD41N60-5X IXGD60N60-7Y IXGD200N60B-9X IXGD2N100-1M IXGD4N100-1T IXGD8N100-2L IXGD32N60B-5X ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
IXFd50n20 Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type	Original	PDF
Untitled Abstract: No abstract text available Text: OIXYS PRELIMINARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C	OCR Scan	PDF	IXGH28N30A IXGH28N30AS O-247 28N30AS)
SMD ajw Abstract: ajw smd ajw 35 Text: □ IXYS PRELIM IN ARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C	OCR Scan	PDF	IXGH28N30A IXGH28N30AS 13/10Nm/lb O-247 SMD ajw ajw smd ajw 35
IXGD40N60A Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60 Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60	OCR Scan	PDF	IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60
IXGH24N50B Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100 Text: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500	OCR Scan	PDF	IXGD28N30-43 IXGD40N30-5X IXGD12N60B-33 IXGD31N60-4X IXGD41N60-5X IXGD60N60-7X IXGD200N60-9X IXGD8N100-2L IXGD12N100-33 IXGD17N100-4T IXGH24N50B IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100