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    GE H11A1 Datasheets Context Search

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    GE H11A3

    Abstract: GE H11A1 H11A1 GE H11A2 H11A3 H11A1 H11A4 H11A5 lotti
    Text: G E SOLID STATE 01 DE I 3Ö7SDÖ1 DDlltflt Optoelectronic Specifications. Photon Coupled Isolator H11A1, H11A2, H11A3, H11A4, H11A5 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H llA i thru H11A5 consist of a gallium arsenide


    OCR Scan     		PDF H11A1, H11A2, H11A3, H11A4, H11A5 H11A5 33mW/Â DE13fl7S0fll GE H11A3 GE H11A1 H11A1 GE H11A2 H11A3 H11A1 H11A4 lotti

    1307 TRANSISTOR

    Abstract: H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 4N38A IC VS 1307 H11AA1 H11AA2 H11B2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 1307 TRANSISTOR H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 IC VS 1307

    H13B1

    Abstract: H17B1 pair of led and photo transistor photo interrupter module h13a1 GE H11D2 H11B255 H11C1 H13A2 H13B2 H15B1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) Tr Tf 1 2 2 VCEISAT) MAX. •* AC INPUT COUPLER 20% 10% I I 100 200 30 30


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H13B1 H17B1 pair of led and photo transistor photo interrupter module h13a1 GE H11D2 H11B255 H11C1 H13A2 H13B2 H15B1

    H13A1

    Abstract: photo interrupter module h13a1 photo interrupter module H13A2 H13A1-H13A2 H13A 4N38 4N38A H11A10 H11AA1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 100 100 100 100 50 50 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 30 30 1 1 2 2 2


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H13A1 photo interrupter module h13a1 photo interrupter module H13A2 H13A1-H13A2 H13A 4N38

    h13b1

    Abstract: ins060 H13A2 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 h13b1 ins060 H13A2 4N38

    a4n33

    Abstract: H11B255 H13A2 H11C1 photo interrupter module photo interrupter module h13a1 4N38 4N38A H11A10 H11AA1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 a4n33 H11B255 H13A2 H11C1 photo interrupter module photo interrupter module h13a1 4N38

    photo interrupter module h13a1

    Abstract: H13B1 H11C1 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVc eo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 photo interrupter module h13a1 H13B1 H11C1 4N38

    photo interrupter module h13a1

    Abstract: 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2 H11D1 H11D2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 photo interrupter module h13a1 4N38

    IC VS 1307

    Abstract: GE H11D2 H11B255 H11C1 H13B1 4N38 4N38A H11A10 h17a H11AA2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 IC VS 1307 GE H11D2 H11B255 H11C1 H13B1 4N38 h17a

    H13B1

    Abstract: HIIAA1 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2 H11D1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H13B1 HIIAA1 4N38

    H17A1

    Abstract: H15B2 photo interrupter module h13a1 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H17A1 H15B2 photo interrupter module h13a1 4N38

    photo interrupter module

    Abstract: GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38 4N38A H11A10 H11AA1 H11AA2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 photo interrupter module GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38

    the light activated scr

    Abstract: H11B255 photo interrupter module h13a1 GE SCR 1000 H11C1 H11C2 4N38 4N38A H11A10 H11AA1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 ID nA MAX. BVceo (VOLTS) MIN. 50 30 I I 100 200 30 30 20'ä I 20% 20% 10% 100 100 100 100 50 50 300 300 100 100 100 100 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 the light activated scr H11B255 photo interrupter module h13a1 GE SCR 1000 H11C1 H11C2 4N38

    4N38

    Abstract: 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2 H11D1 H11D2 H11D3
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 .4 .4 .4 1.0


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 4N38

    SEN 1327

    Abstract: CI06B pnp phototransistor H11A10 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor H11B1 4N38
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 4 .4 .4 .4 1.0


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 SEN 1327 CI06B pnp phototransistor 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor 4N38

    H11A10

    Abstract: aaan D41K1 threshold switch H17A1 BRX 70
    Text: G E SOLID STATE □1 DE I 3 Ö 7 S 0 Ö 1 D O n b T D 0 uptqeiectronlc Specifications 7 ' - V / - S ’3 PHOTON COUPLED CURRENT THRESHOLD SWITCH H11A10 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H 11A 10 is a gallium arsenide infrared emitting diode coupled with a silicon


    OCR Scan     		PDF H11A10 -7lCI06B aaan D41K1 threshold switch H17A1 BRX 70

    2N5777 equivalent

    Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 equivalent transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent color sensitive PHOTO TRANSISTOR

    L14F1 npn photo transistor

    Abstract: transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1

    Phototransistor L14G3 application

    Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
    Text: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 Phototransistor L14G3 application L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777

    H13B1

    Abstract: h13b1 photo interrupter module H13B2 photo interrupter module h13a1 photo interrupter module NT 407 F TRANSISTOR SEN 1327 4N38 4N38A H11A10
    Text: P R O G R A M M A B LE T H R E S H O LD CO U PLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 1 5 I 5


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H13B1 h13b1 photo interrupter module H13B2 photo interrupter module h13a1 photo interrupter module NT 407 F TRANSISTOR SEN 1327 4N38

    photo transistor 2n5777

    Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 photo transistor 2n5777 L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1

    L14F1 PHOTOTRANSISTOR

    Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 PHOTOTRANSISTOR 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1

    opto isolator 4n35

    Abstract: GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 LED55B L14G1 phototransistor
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A l p = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . m W PAGE M A X . Ip CONT.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 opto isolator 4n35 GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 L14G1 phototransistor

    2N5779

    Abstract: L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FA LL R IS E M AX. M IN . M A X . P E A K E M IS S IO N W A V ELEN G TH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A lp = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . mW PAGE M A X . Ip CO NT.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5779 L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327