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    GE-14 TRANSISTOR Search Results

    GE-14 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GE-14 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ge-20 transistor

    Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams
    Text: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching


    Original     		PDF

    S5 100 B112 MT RELAY

    Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
    Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1


    Original     		PDF VAT300 VAT300, ST-3450C E-08225 D-50677 F-93601 I-20092 B-9000 C/4566/E S5 100 B112 MT RELAY AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor

    GE thyristor

    Abstract: ge-2 transistor DR-6 GE DR6GE Transistor GE 67 ge-10 transistor proximity capactive sensor GE power SCR DR3GE Ge NPN
    Text: Proximity Sensors Capacitive Steel Housing Types DR GE, M 14, PG 21, 13/8" • Steel housing, cylindrical • Diameter: M 14, PG 21, 1 3/8" • Sensing distance: 3 to 10 mm • Power supply: 10 to 27 VDC 90 to 240 VAC • LED-indication for output ON AC types


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: B10067 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80â V(BR)CBO (V) I(C) Max. (A)14 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF B10067 StyleTO-41

    Untitled

    Abstract: No abstract text available
    Text: 440C-E Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)14 Maximum Operating Temp (øC)100þ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 440C-E

    Untitled

    Abstract: No abstract text available
    Text: 19-1476; Rev 0; 4/99 Low -Pow e r, Se ria l, 1 4 -Bit DACs w it h Forc e /Se nse Volt a ge Out put The MAX5171/MAX5173 low-power, serial, voltage-output, 14-bit digital-to-analog converters DACs feature a precision output amplifier in a space-saving 16-pin QSOP


    Original     		PDF MAX5171/MAX5173 14-bit 16-pin MAX5171 MAX5173 MAX5171/

    igbt 20A 1200v

    Abstract: 035H HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E
    Text: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package


    Original     		PDF IRGP20B120U-EP O-247 20KHz O-247AD igbt 20A 1200v 035H HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E

    035H

    Abstract: HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E
    Text: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package


    Original     		PDF IRGP20B120U-EP O-247 20KHz O-247AD O-247AD IRGP30B120KD-E 035H HF40D120ACE IRGP20B120U-EP IRGP30B120KD-E

    Untitled

    Abstract: No abstract text available
    Text: PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package


    Original     		PDF IRGP20B120U-EP O-247 20KHz O-247AD

    Untitled

    Abstract: No abstract text available
    Text: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability


    Original     		PDF IRGP30B120KD-EP O-247AD IRGP30B120KD-E

    035H

    Abstract: IRGP30B120KD-E IRGP30B120KD-EP
    Text: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability


    Original     		PDF IRGP30B120KD-EP O-247AD IRGP30B120KD-E 035H IRGP30B120KD-E IRGP30B120KD-EP

    IRGP30B120KD-EP

    Abstract: ir igbt 1200V 40A 035H IRGP30B120KD-E
    Text: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability


    Original     		PDF IRGP30B120KD-EP O-247AD IRGP30B120KD-E IRGP30B120KD-EP ir igbt 1200V 40A 035H IRGP30B120KD-E

    motor IG 2200 19 x 00 15 r

    Abstract: 12v dc motor IG 2200 19
    Text: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability


    Original     		PDF IRGP30B120KD-E O-247AD O-247AD motor IG 2200 19 x 00 15 r 12v dc motor IG 2200 19

    600V 25A Ultrafast Diode

    Abstract: GE power diode IC OZ 9936 in 4436 Ir 900v 60a ir igbt 1200V 40A 035H IRGP30B120KD-E PW80 irgp30b120
    Text: PD- 93818A IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 s Short Circuit Capability


    Original     		PDF 3818A IRGP30B120KD-E O-247AD 600V 25A Ultrafast Diode GE power diode IC OZ 9936 in 4436 Ir 900v 60a ir igbt 1200V 40A 035H IRGP30B120KD-E PW80 irgp30b120

    74AC14SC

    Abstract: "Inverter Gates" AC14 H123 74AC14 74AC14MTC 74AC14PC 74AC14SJ M14A M14D
    Text: S E M ¡C O N D U C T O R D • Revised iO Q o D ecem k ber 1998 TM 74AC14 Hex Inverter with Schmitt Trigger Input General Description T h e AC14 contains six inverter gates each w ith a Schm itt trig ge r input. The AC 14 contains six logic inverters which


    OCR Scan     		PDF 74AC14 74AC14SC "Inverter Gates" AC14 H123 74AC14 74AC14MTC 74AC14PC 74AC14SJ M14A M14D

    MAX544ACPA

    Abstract: No abstract text available
    Text: 19-1088; Rev 2; Q/96 A I / X I A I +5V, Serial-Input, Voltage-Output, 14-Bit DACs The DAC output range is 0V to V ref . For bipolar opera­ tion, m atched scaling resistors are provided in the MAX545 for use with an external precision op amp such as the MAX400 ge nerating a ±V ref output


    OCR Scan     		PDF 14-Bit MAX544/MAX545 MAX545 MAX400) MAX544AEPA MAX544BEPA MAX544AESA MAX544ACPA

    74AC14SC

    Abstract: 74AC14 74AC14MTC 74AC14SJ 74ACT14 M14A M14D MTC14
    Text: Revised D ecem ber 1999 S E M I C O N D U C T O R TM 74AC14 • 74ACT14 Hex Inverter with Schmitt Trigger Input General Description Features The 74A C 14 and 74A C T14 contain six inverter gates each w ith a S chm itt trig ge r input. T hey are capable of tra n sfo rm ­


    OCR Scan     		PDF 74AC14 74ACT14 74AC14 74ACT14 74AC14SC 74AC14MTC 74AC14SJ M14A M14D MTC14

    74ACTQ14

    Abstract: 74ACTQ14PC 74ACTQ14SC ACTQ14 M14A MS-001 N14A
    Text: Revised D ecem ber 1998 S E M I C O N D U C T O R TM 74ACTQ14 Quiet Series Hex Inverter with Schmitt Trigger Input General Description T he AC TQ 14 contains six inverter gates each with a S chm itt trig ge r input. They are capable o f transform ing slow ly changing input signals into sharply defined, jitte r­


    OCR Scan     		PDF 74ACTQ14 ACTQ14 74ACTQ14 74ACTQ14PC 74ACTQ14SC M14A MS-001 N14A

    1401-1407

    Abstract: 2N1424 GT123 TIP04 2N5577 2N5579 MD38 2sc179 data
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


    OCR Scan     		PDF NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 1401-1407 2N1424 GT123 TIP04 2N5577 2N5579 MD38 2sc179 data

    78m5

    Abstract: PT2622 2N1841 5U100 2sc180 2N2340 S552 TO114 package 2SC23 2SC24
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 78m5 PT2622 2N1841 5U100 2sc180 2N2340 S552 TO114 package 2SC23 2SC24

    GT123

    Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan     		PDF NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 GT123 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285

    NKT 275 transistor

    Abstract: 2N6135 MD14 package
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF

    2N1029

    Abstract: 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 2N1029 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A

    STC1015E

    Abstract: DTS104 ASY82 DTS103 DTS106 DTS108 NKT12
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 STC1015E DTS104 ASY82 DTS103 DTS106 DTS108 NKT12