VISHAY MARKING CODE
Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
Text: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band
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DO-204AL/DO-204AC/DO-201AD/GP20/1
5KE/P600ï
P6KE22
GP15M
0621X
5KE15A
1N6275A
SB340
VISHAY MARKING CODE
Vishay DaTE CODE
GENERAL SEMICONDUCTOR MARKING EG SMB
Part marking
MBL104S
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GENERAL SEMICONDUCTOR MARKING SJ SMA
Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number
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DO-204AL/DO-204AC/DO-201AD/GP20/1
5KE/P600
P6KE22
GP15M
0621X
5KE15A
1N6275A
SB340
GENERAL SEMICONDUCTOR MARKING SJ SMA
VISHAY MARKING SJ
VISHAY MARKING SJ SMA
Vishay diodes code marking
bys 025
tvs SMC MARKING
VISHAY MARKING CODE
TVS AE SMA
SMC MARKING SJ
MR06X
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: FCPF190N60_F152 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior
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FCPF190N60
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Untitled
Abstract: No abstract text available
Text: FCD380N60E N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Description Features ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
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FCD380N60E
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Untitled
Abstract: No abstract text available
Text: FCA47N60 / FCA47N60_F109 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCA47N60
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Untitled
Abstract: No abstract text available
Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 m Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from
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FCH47N60N
11PLANARâ
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Untitled
Abstract: No abstract text available
Text: FCPF380N60_F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior
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FCPF380N60
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Untitled
Abstract: No abstract text available
Text: FCPF380N60E_F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior
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FCPF380N60E
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Untitled
Abstract: No abstract text available
Text: FCH47N60F N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 73 m Features Description • 650 V @TJ = 150 C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology
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FCH47N60F
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fcu900n60z
Abstract: No abstract text available
Text: FCU900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ Features • 675 V @TJ = Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
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FCU900N60Z
FCU900N60Z
150oC
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Untitled
Abstract: No abstract text available
Text: FCH072N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 52 A, 72 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
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FCH072N60F
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Untitled
Abstract: No abstract text available
Text: FCH104N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
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FCH104N60F
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FCA76N60N
Abstract: SJ 76 A DIODE
Text: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next • Ultra Low Gate Charge (Typ. Qg = 218 nC) generation of high voltage super-junction (SJ) technology
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FCA76N60N
FCA76N60N
SJ 76 A DIODE
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Untitled
Abstract: No abstract text available
Text: FCA16N60N N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from
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FCA16N60N
FCA16N60N
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FCD4N60
Abstract: No abstract text available
Text: FCD4N60 N-Channel SuperFET MOSFET 600 V, 3.9 A, 1.2 Ω Features Description • 650V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching
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FCD4N60
FCD4N60
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Untitled
Abstract: No abstract text available
Text: FCI25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology
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FCI25N60N
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FCPF400N60
Abstract: fairchild FCPF400N60
Text: FCPF400N60 N-Channel SuperFET II MOSFET 600 V, 10 A, 400 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
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FCPF400N60
FCPF400N60
fairchild FCPF400N60
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SERDES
Abstract: fch47n60n 511 MOSFET
Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from
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FCH47N60N
FCH47N60N
SERDES
511 MOSFET
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fcp25n60
Abstract: FCP25N60N
Text: FCP25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology
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FCP25N60N
fcp25n60
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FCH22N60N
Abstract: No abstract text available
Text: FCH22N60N N-Channel SupreMOS MOSFET 600 V, 22 A, 165 mΩ Features Description • RDS on = 140 mΩ (Typ.)@ VGS = 10 V, ID = 11 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from
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FCH22N60N
FCH22N60N
150oC
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fch47n60nf
Abstract: No abstract text available
Text: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 mΩ Features Description • 650 V @TJ = 150 The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction SJ technology employing a deep trench filling process that differentiate it from
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FCH47N60NF
FCH47N60NF
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General Semiconductor SJ diode
Abstract: FCH47N60F-F133 fch47n60f
Text: FCH47N60F_F133 N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 73 mΩ Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology
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FCH47N60F
General Semiconductor SJ diode
FCH47N60F-F133
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