B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: Union Semiconductor, Inc. UM6401P http://www.union-ic.com 6 Line ESD/EMI Protection for Color LCD Interfaces General Description The UM6401P is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic equipment. This state-of-the-art
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UM6401P
UM6401P
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2SC5086FT
Abstract: No abstract text available
Text: TOSHIBA 2SC5086FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 Low Noise Figure, High Gain. N F=l.ldB, |S 2 ie l 2 —lldB f= 1GHz 0.8 ± 0.05 M AXIM UM RATINGS (Ta = 25°C)
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2SC5086FT
0022g
2SC5086FT
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2SA1203
Abstract: 2SC2883 A1203
Text: 2SA1203 TOSHIBA 2 S A 1 203 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • • • • 1.7MAX. 0.4 +0.05 + 0.08^ 0.45-0.05 H M AXIM UM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Collector-Base Voltage
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2SA1203
2SC2883
2SA1203
A1203
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2SC3547A
Abstract: No abstract text available
Text: TOSHIBA 2SC3547A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3547A Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS COMMON COLLECTOR • + 0.5 2.5-0.3 Transition Frequency is High and Dependent on Current I- TT,yî > p 11pn fl V M AXIM UM RATINGS (Ta = 25°C)
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2SC3547A
2SC3547A
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Untitled
Abstract: No abstract text available
Text: UM142XX 300mA, Low Consumption, Wide Input Voltage Linear Regulator UM142XXS SOT23-3 UM142XXY SOT89-3 UM142XXB SOT89-3 General Description The UM142XX series are a group of positive voltage output, high precise, high PSRR and low power consumption voltage regulator. The output voltages are selectable in 100mV steps within a
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UM142XX
300mA,
UM142XXS
OT23-3
UM142XXY
OT89-3
UM142XXB
UM142XX
100mV
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UAF3000
Abstract: No abstract text available
Text: Union Semiconductor, Inc. UM5204 http://www.union-ic.com Quad Channel Low Capacitance ESD Protection Diode Array General Description UM5204 are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from
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UM5204
UM5204
SC-70-6
SC-89-6
UAF3000
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Untitled
Abstract: No abstract text available
Text: 1SV313 TOSHIBA 1 SV3 1 3 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : Co 5 y / C2.5 y = 2.5 Typ. Low Series Resistance : rs = 0.35 ü, (Typ.) Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)
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1SV313
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1SV314
Abstract: No abstract text available
Text: 1SV314 TOSHIBA 1 SV3 14 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio • C0.5 V / c 2.5 V = 2-5 TyP- : rs = 0.35 O (Typ.) Low Series Resistance Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)
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1SV314
1SV314
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR. 2 SA 1203 SEMICONDUCTOR TO SHIBA TECHNICAL DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1203) Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS 4.6MAX. UMAX. • Suitable fo r Output Stage of 3 Watts A m p lif ie r • PC = 1~2W (Mounted on Ceramic Substrate)
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2SA1203)
2SC2883
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Untitled
Abstract: No abstract text available
Text: UM5052DA Single Line Bi-directional ESD Protection Diode Array UM5052DA DFN2 0.6x0.3 General Description The UM5052DA ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They offer desirable
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UM5052DA
UM5052DA
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Untitled
Abstract: No abstract text available
Text: UM5079/Q Single Line ESD Protection Diode Array UM5079/Q FBP2 1.0x0.6 /DFN2 1.0×0.6 General Description The UM5079/Q ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area
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UM5079/Q
UM5079/Q
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FBP02
Abstract: No abstract text available
Text: UM5059/Q Single Line ESD Protection Diode Array UM5059 UM5059Q FBP02 1.0x0.6 DFN2 1.0×0.6 General Description The UM5059/Q ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area
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UM5059/Q
UM5059
UM5059Q
FBP02
UM5059/Q
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marking zk TVS
Abstract: Signal Path designer Union Semiconductor
Text: UM5060 Bidirectional Single Line TVS Protection Diode UM5060 SOD523 General Description The UM5060 TVS protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional
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UM5060
UM5060
OD523
OD523
marking zk TVS
Signal Path designer
Union Semiconductor
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Untitled
Abstract: No abstract text available
Text: UM2302 60V D-S Small Signal MOSFET UM2302S SOT23-3 UM2302P SOT323 General Description The UM2302 is a low threshold N-channel MOSFET, which has low on-resistance, high reliability and stability, as well as fast switch capability and high saturation current. This benefit
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UM2302
UM2302S
OT23-3
UM2302P
OT323
UM2302
OT23-3
OT323
115mA
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Untitled
Abstract: No abstract text available
Text: UM5080/H Low Capacitance Bidirectional Single Line TVS Protection Diode UM5080/H DFN2 1.0x0.6/CSP 1.0×0.6 General Description The UM5080/H TVS protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional
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UM5080/H
UM5080/H
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Signal Path designer
Abstract: Union Semiconductor
Text: UM5059T Single Line ESD Protection Diode Array UM5059T DFN2 1.0x0.6 General Description The UM5059T ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional
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UM5059T
UM5059T
Signal Path designer
Union Semiconductor
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PDF
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marking code e3
Abstract: Signal Path designer Union Semiconductor
Text: UM5079 Single Line ESD Protection Diode Array UM5079 DFN2 1.0x0.6 General Description The UM5079 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for
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UM5079
UM5079
marking code e3
Signal Path designer
Union Semiconductor
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PDF
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UM5059
Abstract: Signal Path designer Union Semiconductor
Text: UM5059 Single Line ESD Protection Diode Array UM5059 DFN2 1.0x0.6 General Description The UM5059 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional
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UM5059
UM5059
Signal Path designer
Union Semiconductor
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE HN9C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q T 1 flFT um • ■ ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • U nit in mm TWO devices are built in to the super-thin and ultra super mini 2.1 ± 0.1
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HN9C10FT
2SC5261
2SC5086
500MHz
--20mA,
1000M
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QFN3
Abstract: ESD 141 Signal Path designer Union Semiconductor
Text: UM5062 Dual Line ESD Protection Diode Array UM5062 QFN3 1.4x1.1 General Description The UM5062 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional
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UM5062
UM5062
QFN3
ESD 141
Signal Path designer
Union Semiconductor
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SOD523 land pattern
Abstract: Signal Path designer Union Semiconductor
Text: UM5075 Single Line ESD Protection Diode Array UM5075 SOD523 General Description The UM5075 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional
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UM5075
UM5075
OD523
OD523
SOD523 land pattern
Signal Path designer
Union Semiconductor
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PDF
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um505
Abstract: Signal Path designer Union Semiconductor
Text: UM5055 Single Line ESD Protection Diode Array UM5055 SOD523 General Description The UM5055 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional
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UM5055
UM5055
OD523
OD523packagely
um505
Signal Path designer
Union Semiconductor
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PDF
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