Untitled
Abstract: No abstract text available
Text: UM5052DA Single Line Bi-directional ESD Protection Diode Array UM5052DA DFN2 0.6x0.3 General Description The UM5052DA ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They offer desirable
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UM5052DA
UM5052DA
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um505
Abstract: Signal Path designer Union Semiconductor
Text: UM5055 Single Line ESD Protection Diode Array UM5055 SOD523 General Description The UM5055 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional
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UM5055
UM5055
OD523
OD523packagely
um505
Signal Path designer
Union Semiconductor
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UM5059
Abstract: Signal Path designer Union Semiconductor
Text: UM5059 Single Line ESD Protection Diode Array UM5059 DFN2 1.0x0.6 General Description The UM5059 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional
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UM5059
UM5059
Signal Path designer
Union Semiconductor
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Untitled
Abstract: No abstract text available
Text: Union Semiconductor, Inc. UM5059 http://www.union-ic.com Single Line ESD Protection Diode In Ultra Small WBFBP-02L Package Description The UM5059 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high
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UM5059
WBFBP-02L
UM5059
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Signal Path designer
Abstract: Union Semiconductor
Text: UM5059T Single Line ESD Protection Diode Array UM5059T DFN2 1.0x0.6 General Description The UM5059T ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional
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UM5059T
UM5059T
Signal Path designer
Union Semiconductor
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Untitled
Abstract: No abstract text available
Text: Union Semiconductor, Inc. UM5055 http://www.union-ic.com Single Line ESD Protection Diode In Portable Equipment Description The UM5055 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional area junctions for conducting high
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UM5055
UM5055
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FBP02
Abstract: No abstract text available
Text: UM5059/Q Single Line ESD Protection Diode Array UM5059 UM5059Q FBP02 1.0x0.6 DFN2 1.0×0.6 General Description The UM5059/Q ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area
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UM5059/Q
UM5059
UM5059Q
FBP02
UM5059/Q
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UM501
Abstract: UM502 UM506 UM504 DATASHEET UM507 MA2000 UM514
Text: UM500 SERIES 10 to 12 Watt DC-DC Converters • ■ ■ ■ ■ High Performance. 60% Efficiency. Regulated Outputs. Pi Input Filter. Six-Sided Shield SPECIFICATIONS GENERAL SPECIFICATIONS All specifications are typical at nominal line, full load and 25°C unless otherwise noted.
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UM500
100pF
20KHz
UM500
UM501
UM502
UM506
UM504 DATASHEET
UM507
MA2000
UM514
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UM500
Abstract: UM503 UM502 UM506 UM501 UM504 UM505 UM507 UM508 UM509
Text: UM500 SERIES 10 to 12 Watt DC-DC Converters ♦ ♦ ♦ ♦ ♦ High Performance 60% Efficiency Regulated Outputs Pi Input Filter Six-Sided Shield SPECIFICATIONS OUTPUT SPECIFICATIONS All specifications are typical at nominal line, full load and 25°C unless otherwise noted.
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UM500
20MHz
UM503
UM502
UM506
UM501
UM504
UM505
UM507
UM508
UM509
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Untitled
Abstract: No abstract text available
Text: UM500 SERIES 10 to 12 Watt DC-DC Converters • ■ ■ ■ ■ High Performance. 60% Efficiency. Regulated Outputs. Pi Input Filter. Six-Sided Shield SPECIFICATIONS GENERAL SPECIFICATIONS All specifications are typical at nominal line, full load and 25°C unless otherwise noted.
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UM500
100pF
20KHz
UM500
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D 1163 A
Abstract: TIM5053-8L
Text: TIM5053-8L FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 28 dBm, Single Carrier Level ■ HIGH POW ER P i dB = 39 dBm at 5.0 GHz to 5.3 GHz ■ HIGH GAIN G ld B = 9 dB at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE
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TIM5053-8L
D 1163 A
TIM5053-8L
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A525
Abstract: No abstract text available
Text: UNIVERSAL MICROELECTRONIC " 11,1,1 " 'WjW 'I I l i fJ k i l l 9 jf C .4f 3 Z i / ZK *' '•-■■'• ■ '■:J%4 ^jL-/t lì V A -,.-A ., QDocmm 3 HTE D -fc i INPUT SPECIFICATIONS |*~ 7 fl ,»j/ Input Voltage Range . Input Filter.
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20MHz
A525
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