Untitled
Abstract: No abstract text available
Text: ADS ADS800 800 ADS U 800 E 12-Bit, 40MHz Sampling ANALOG-TO-DIGITAL CONVERTER TM FEATURES DESCRIPTION ● LOW POWER: 390mW ● INTERNAL REFERENCE The ADS800 is a low power, monolithic 12-bit, 40MHz analog-to-digital converter utilizing a small geometry
|
Original
|
ADS800
12-Bit,
40MHz
390mW
65MHz
28-Lead
ADS800
|
PDF
|
IRF740BPBF
Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology
|
Original
|
O-220
O-251)
O-220FP
O-247AC
IRF740BPBF
mosfets for lcd tv
SiHD3N50D
IRF730BPBF
SiHF8N50D
SiHG22N50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5FAE, 7FAA, 7FAU. www.vishay.com Vishay Cera-Mite RF Power Barrel Capacitors Class 1 and Class 2 Ceramic FEATURES • Small size • Geometry minimizes inductance, optimizes voltage withstand and maximizes heat radiation APPLICATIONS • Industrial and medical RF power supply
|
Original
|
11-Mar-11
|
PDF
|
MBRA340T3G
Abstract: DIODE marking code A34
Text: MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
|
Original
|
MBRA340T3G,
NRVBA340T3G
MBRA340T3/D
MBRA340T3G
DIODE marking code A34
|
PDF
|
MBRS360T3G
Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
|
Original
|
MBRS360T3G,
MBRS360BT3G,
NRVBS360T3G,
NRVBS360BT3G
MBRS360T3/D
MBRS360T3G
NRVBS360T3G
MBRS360BT3G
MBRS360BT3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors Reverse Geometry Low ESL Type LLL215R71A224MA11p (0508, X7R, 0.22µF, 10Vdc) p: packaging code RoHS regulation conformity parts L T W (in mm) • Dimensions ■ Packaging
|
Original
|
LLL215R71A224MA11p
10Vdc)
180mm
330mm
10Vdc
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors Reverse Geometry Low ESL Type LLL185C70G224MA11p (0306, X7S, 0.22µF, 4Vdc) p: packaging code RoHS regulation conformity parts L T W (in mm) • Dimensions ■ Packaging
|
Original
|
LLL185C70G224MA11p
180mm
330mm
|
PDF
|
ACT04
Abstract: ADS821 ADS821U OPA130 OPA694 TT1-6-KK81 ceramic bandpass Filter 10MHz
Text: ADS821 ADS 821 U SBAS040B – DECEMBER 1995 – REVISED FEBRUARY 2005 10-Bit, 40MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION ● ● ● ● ● The ADS821 is a low-power, monolithic 10-bit, 40MHz Analog-to-Digital A/D converter utilizing a small geometry CMOS
|
Original
|
ADS821
SBAS040B
10-Bit,
40MHz
ADS821
10-bit
380mW
ACT04
ADS821U
OPA130
OPA694
TT1-6-KK81
ceramic bandpass Filter 10MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors Reverse Geometry Low ESL Type LLL315R71H103MA11p (0612, X7R, 10000pF, 50Vdc) p: packaging code RoHS regulation conformity parts L T W (in mm) • Dimensions ■ Packaging
|
Original
|
LLL315R71H103MA11p
10000pF,
50Vdc)
180mm
330mm
10000pF
50Vdc
|
PDF
|
CEA-XX-250UN-120
Abstract: CEA-XX-250UN-350
Text: 250UN Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250UN-120 CEA-XX-250UN-350 120 ± 0.3% 350 ± 0.3% P2 P2 actual size DESCRIPTION General-purpose gage with narrow geometry. Exposed
|
Original
|
250UN
CEA-XX-250UN-120
CEA-XX-250UN-350
250UW
22-Feb-10
CEA-XX-250UN-120
CEA-XX-250UN-350
|
PDF
|
P77 transistor
Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Text: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry
|
Original
|
ECG5016A
PH1214-
P77 transistor
1.5 j63
.15 j63
BZ15
ECG5016A
l 9113
J4 81 diode
|
PDF
|
b 595 transistor
Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
Text: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
|
Original
|
PH31355M
15-j3
b 595 transistor
Mallory Capacitor
transistor b 595
J3 transistor
transistor 15j30
Rogers 6010.5
PH3135-5M
electrolytic Mallory Capacitor
MICROWAVE TEST FIXTURE
|
PDF
|
GC6001
Abstract: GC6000 SURFACE MOUNT DIODES MIL GRADE White Noise GC6003 gc600x
Text: GC6001 – GC6003 POWER GENERATION Microwave Noise Diodes TM RoHS Compliant DESCRIPTION KEY FEATURES The GC6000 series of RF/Microwave noise diodes represent the state of the art in noise device technology. By carefully controlling junction doping profiles and mesa geometry, these devices provide the
|
Original
|
GC6001
GC6003
GC6000
GC600X
GC6001
SURFACE MOUNT DIODES MIL GRADE
White Noise
GC6003
gc600x
|
PDF
|
PH1214-2M
Abstract: .15 j63 1.5 j63 1035 transistor
Text: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors
|
Original
|
PH1214-2M
214-2M
PH1214-2M
.15 j63
1.5 j63
1035 transistor
|
PDF
|
|
|
13MM
Abstract: PH3134-2OL transistor f20 PH3134
Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
|
Original
|
PH3134-2OL
13MM
PH3134-2OL
transistor f20
PH3134
|
PDF
|
transistor c36
Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Text: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
|
Original
|
PH3134-11s
MJLLIMET1344)
transistor c36
wacom
wacom connector
transistor j8
f 9234
transistor B 325
PH3134
|
PDF
|
TRANSISTOR Z4
Abstract: No abstract text available
Text: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors
|
Original
|
214-6M
TRANSISTOR Z4
|
PDF
|
13MM
Abstract: 817j18
Text: I .-em _- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System
|
Original
|
|
PDF
|
2N6353
Abstract: 2n6351 RB1-E
Text: SÖE D TELED YN E COMPONENTS ö*il7bC15 üDQtiS42 t. T -3 3 -a 7 NPN POWER DARLINGTON 5AMP SWITCHING TRANSISTORS 2N6350 thru 2N6353 GEOMETRY 508 • KD5A • LowVCE Sat • High Gain TO-33 • Monolithic Construction MAXIMUM RATINGS SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT
|
OCR Scan
|
il7bC15
DQtiS42
2N6350
2N6353
100ohms
2N6351
2N6352
2N6353
10MHZ
RB1-E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)
|
OCR Scan
|
2N3684
2N3684A
2N3685
2N3685A
2N3686
2N3686A
2N3687
2N3687A
2N4867
2N4867A
|
PDF
|
UC754
Abstract: UC758
Text: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max
|
OCR Scan
|
KK4302
KK4303
KK4304
UC100
UC105
UC110
UC120
UC130
UC135
UC701
UC754
UC758
|
PDF
|
050TM
Abstract: TLM833 TLM8 Marking 34
Text: Package Details - TLM833 Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: 3-4 Character Alpha/Numeric Code. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (4- January 2006)
|
Original
|
TLM833
EIA-481-1-A
03-April
050TM
TLM833
TLM8
Marking 34
|
PDF
|
sot923
Abstract: sot-923 weight SOT-923
Text: Package Details - SOT-923 Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: Single Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (9-January 2008)
|
Original
|
OT-923
EIA-481-1-A
20x18x5
23x23x13
23x23x23
21x9x9
53x23x23
27x9x17
69x23x43
sot923
sot-923 weight
SOT-923
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Package Details - SOT-883L Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: Single Character Alpha/Numeric Code. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m
|
Original
|
OT-883L
14-November
EIA-481-1-A
28-September
|
PDF
|
