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Vishay Siliconix SIHG22N50D-E3 MOSFET N-CH 500V 22A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG22N50D-E3	Tube			500	1 - 10 - 100 - 1000 $1.91584 10000 $1.91584	Buy Now
Bristol Electronics	SIHG22N50D-E3		350			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIHG22N50D-GE3 MOSFET N-CH 500V 22A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG22N50D-GE3	Tube			500	1 - 10 - 100 - 1000 $2.27586 10000 $2.27586	Buy Now
Vishay Intertechnologies SIHG22N50D-GE3 Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 67A; 315W; TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHG22N50D-GE3				1	1 $3.7 10 $3.32 100 $2.64 1000 $2.47 10000 $2.47	Get Quote
Vishay Intertechnologies SIHG22N50DGE3 POWER MOSFET Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIHG22N50DGE3		900			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIHG22N50 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHG22N50D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 22A TO-247AC		Original	PDF
SIHG22N50D-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 22A TO-247AC		Original	PDF

SIHG22N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHG22N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
mosfet 452 Abstract: No abstract text available Text: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 mosfet 452	PDF
SiHG22N50 Abstract: No abstract text available Text: SiHG22N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHG22N50D AN609, 9202m 8712m 3875m 7679m 0616m 2369m 4858m 4969u SiHG22N50	PDF
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. HIGH-VOLTAGE MOSFETs E SERIES HIGH VOLTAGE 500 V, 600 V, and 650 V Super Junction N-Channel MOSFETs D SERIES HIGH VOLTAGE 400 V, 500 V, and 600 V Stripe Technology N-Channel MOSFETs www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C .	Original	SiHx12N50E SiHx15N50E SiHx20N50E SiHx25N50E O-247 O-247AC O-220 O-220 O-220AB O-263)	PDF