zp42915tc
Abstract: 78141 ZP-42915-TC ZJ-42915-TC XW-41003-TC transformer EI lamination 40907 tc transformer core 42206-tc EER 42*15 ZP-42206-TC-PO
Text: Part Number Identification – How to Order UNGAPPED CORES and TOROIDS 3. 1. Typical Part Number S D-4 30 19 -UG-xx Coating/Shape Code See Note 2 Geometry Code For standard ungapped cores a two letter code indicates the geometry. Unit of Code Geometry Example
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0P-44317-
0J-42516-
ZJ-42915-
0J-41106-
DF-42311-
41510N
zp42915tc
78141
ZP-42915-TC
ZJ-42915-TC
XW-41003-TC
transformer EI lamination
40907 tc transformer core
42206-tc
EER 42*15
ZP-42206-TC-PO
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BU 508 AF
Abstract: til 431 TAG 8534 STI SMART POSITIONER Til 160 ET 81 K ic 8279 TIL 123 et 455 MICK 494 CN
Text: 7.5” TI-92 Vejledning 10” TI-92 VEJLEDNING TI-92 Geometry er udviklet af TI og forfatterne til Cabri Geometry IIè, der arbejder på Université Joseph Fourier, Grenoble, Frankrig. TI-92 Symbolic Manipulation er udviklet af TI og forfatterne til programmet
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TI-92
TI-92
28-Jan-99
BU 508 AF
til 431
TAG 8534
STI SMART POSITIONER
Til 160
ET 81 K
ic 8279
TIL 123
et 455
MICK 494 CN
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AM0608-450
Abstract: No abstract text available
Text: AM0608-450 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 445 W MIN. WITH 6.9 dB GAIN .400 x .500 2LFL S038 hermetically sealed
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AM0608-450
AM0608-450
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pnp for 2n3019
Abstract: 2N3700 DIE 2N3700UB 2N3057 2N3019 2N3700 DIE GEOMETRY 2N3019UB 2N3019 DIE 2C3019 2N3019S
Text: Data Sheet No. 2C3019 Generic Packaged Parts: Chip Type 2C3019 Geometry 4500 Polarity PNP 2N3019, 2N3057 Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general
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2C3019
2N3019,
2N3057
2C3019
2N3019S,
2N3019UB,
2N3057,
2N3057A,
pnp for 2n3019
2N3700 DIE
2N3700UB
2N3057
2N3019
2N3700 DIE GEOMETRY
2N3019UB
2N3019 DIE
2N3019S
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AM0608-450
Abstract: No abstract text available
Text: AM0608-450 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 445 W MIN. WITH 6.9 dB GAIN .400 x .500 2LFL S038 hermetically sealed
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AM0608-450
AM0608-450
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2N1893S
Abstract: 2C1893 2N1893 2N1893UB SD1893 SD1893F SQ1893 SQ1893F chip type geometry
Text: Data Sheet No. 2C1893 Generic Packaged Parts: Chip Type 2C1893 Geometry 4500 Polarity NPN 2N1893, 2N1893S Chip type 2C1893 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for medium
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2C1893
2N1893,
2N1893S
2C1893
2N1893S,
2N1893UB,
SD1893,
SD1893F,
2N1893S
2N1893
2N1893UB
SD1893
SD1893F
SQ1893
SQ1893F
chip type geometry
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bga 0,8 mm
Abstract: tray matrix bga AN-1126 MO-151 fine BGA thermal profile an1126
Text: National Semiconductor Application Note 1126 December 2000 CONTENTS Introduction Package Overview PBGA Construction EBGA Construction Package Handling/Shipping Media Design Recommendations Solder Pad Geometry Escape Routing Guidlines Via Density Assembly Recommendations
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2N3019
Abstract: 2n3019 transistor
Text: Data Sheet No. 2N3019 Generic Part Number: 2N3019 Type 2N3019 Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.
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2N3019
MIL-PRF-19500/391
MIL-PRF-19500/391
2N3019
2n3019 transistor
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2N3057A
Abstract: No abstract text available
Text: Data Sheet No. 2N3057A Generic Part Number: 2N3057A Type 2N3057A Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-46 case.
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2N3057A
MIL-PRF-19500/391
MIL-PRF-19500/391
2N3057A
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3N123
Abstract: No abstract text available
Text: ^zmi-donauckoi , inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 LOW COST 3N123 SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450 » t-.in : 001 ELECTRICAL DATA ABSOLUTE MAXIMUM RATING
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3N123
10QMA
3N123
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2N3700UB
Abstract: No abstract text available
Text: Data Sheet No. 2N3700UB Generic Part Number: 2N3700UB Type 2N3700UB Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • General-purpose low power silicon transistor. • Housed in a cersot case. • Also available in chip form using
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2N3700UB
MIL-PRF-19500/391
MIL-PRF-19500/391
2N3700UB
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transistor PT 4500
Abstract: 2N72 2N720A
Text: Data Sheet No. 2N720A Generic Part Number: 2N720A Type 2N720A Geometry 4500 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/182 Features: • • • • General-purpose low-power NPN transistor. Housed in a TO-18 case. Also available in chip form using
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2N720A
MIL-PRF-19500/182
MIL-PRF-19500/182
MIL-S-19500/182
x10-4
transistor PT 4500
2N72
2N720A
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B2060G
Abstract: No abstract text available
Text: MBRJ2060CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRJ2060CTG
MBRJ2060CT/D
B2060G
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B2060g
Abstract: *B2060G SCHOTTKY BARRIER RECTIFIER aka
Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF2060CT
MBRF2060CT/D
B2060g
*B2060G
SCHOTTKY BARRIER RECTIFIER aka
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transistor PT 4500
Abstract: 2N1893
Text: Data Sheet No. 2N1893 Generic Part Number: 2N1893 Type 2N1893 Geometry 4500 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/182 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-5 case. • Also available in chip form using
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2N1893
MIL-PRF-19500/182
MIL-PRF-19500/182
5x10-4
MIL-S-19500/182D
transistor PT 4500
2N1893
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2N3700
Abstract: 2n3700 geometry
Text: Data Sheet No. 2N3700 Generic Part Number: 2N3700 Type 2N3700 Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • General-purpose low power silicon transistor. • Housed in TO-46 case. • Also available in chip form using
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2N3700
MIL-PRF-19500/391
MIL-PRF-19500/391
2N3700
2n3700 geometry
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b20100
Abstract: MBRF20100CTG
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20100CT
MBRF20100CT/D
b20100
MBRF20100CTG
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b20100
Abstract: MBRF20100CTG 221D-03 B20100 diode
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20100CT
MBRF20100CT/D
b20100
MBRF20100CTG
221D-03
B20100 diode
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b2060
Abstract: B2060A
Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF2060CT
MBRF2060CT/D
b2060
B2060A
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2N1893S
Abstract: 2N1893 transistor PT 4500
Text: Data Sheet No. 2N1893S Generic Part Number: 2N1893 Type 2N1893S Geometry 4500 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/182 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-39 case. • Also available in chip form using
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2N1893S
2N1893
MIL-PRF-19500/182
MIL-PRF-19500/182
MIL-S-19500/182D
2N1893S
2N1893
transistor PT 4500
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B20100G
Abstract: B20100G diode MBRF20100CTG AKA B20100G b20100 b20100 g B20100G AKA B20100G on aka AKA B20100 B20100G diode AKA
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20100CT
MBRF20100CT/D
B20100G
B20100G diode
MBRF20100CTG
AKA B20100G
b20100
b20100 g
B20100G AKA
B20100G on aka
AKA B20100
B20100G diode AKA
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b2060
Abstract: 221D-03
Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF2060CT
MBRF2060CT/D
b2060
221D-03
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b2060
Abstract: No abstract text available
Text: MBRF2060CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF2060CT
AN1040.
b2060
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3N74
Abstract: 3n70 3N68 3n103
Text: NPN/PNP DUAL EMITTK CHOPPER BI-POLAR TRANSISTORS 3N62 / „ to i 3N136 GEOMETRY 450 GEOMETRY 481 3N74-3N76 AVAILABLE AS JANJAN-TXJANÎX-V ' ä S S E S i S S “ ,0 LOW rec(sat) 8 Ohms (typ) ELECTRICAL CHARACTERISTICS AT 25 JC FREE-AIR TEMPERATURE •Vk o ■vcao
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3N136
3N74-3N76)
3N68A*
3N915
3N74-3N76fAvailab
3N74
3n70
3N68
3n103
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