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    GEP DIODE Search Results

    GEP DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GEP DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    diode GEP 86 A

    Abstract: scr bt 106 AD29 AD30 MX98723 CSR8 GEP diode
    Text: ADVANCED INFORMATION MX98723 PCI/CARDBUS FAST ETHERNET CONTROLLER 1.0 Feature • A 32-bit CardBus/PCI fast Ethernet Controller integrates 10/100 Base-T MAC, NWAY, MII Interface and 10 Base-T transceiver • Compliant to CardBus specification of the PC Card


    Original     		PDF MX98723 32-bit PM0487 diode GEP 86 A scr bt 106 AD29 AD30 MX98723 CSR8 GEP diode

    gep 45 diode

    Abstract: AD29 AD30 MX98723UC
    Text: ADVANCED INFORMATION MX98723UC PCI/CARDBUS FAST ETHERNET CONTROLLER 1.0 Feature • A 32-bit CardBus/PCI fast Ethernet Controller integrates 10/100 Base-T MAC, NWAY, MII Interface and 10 Base-T transceiver • Compliant to CardBus specification of the PC Card


    Original     		PDF MX98723UC 32-bit E9935 T4638501 32CAX gep 45 diode AD29 AD30 MX98723UC

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG5N120 Preliminary Insulated Gate Bipolar Transistor 21A, 1200V NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES  DESCRIPTION The UTC UG5N120 is a NPT N-Channel IGBT, it uses UTC’s advanced technology to provide the customers with a minimum


    Original     		PDF UG5N120 UG5N120 O-220 UG5N120L-TA3-T UG5N120G-TA3-T QW-R207-029

    GEX 51 DIODE

    Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
    Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage


    Original     		PDF C5DB02 GEX 51 DIODE Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG

    Gex DIODE

    Abstract: Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE
    Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage


    Original     		PDF C5DB02 Gex DIODE Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE

    bfm 2 TERMINAL DIODE

    Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
    Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction


    Original     		PDF

    bu 450 GDF

    Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
    Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


    Original     		PDF C3B04 bu 450 GDF SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714

    bu 450 GDF

    Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
    Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


    Original     		PDF C3B04 bu 450 GDF diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A

    Diode GFK

    Abstract: GFX DIODE BJE 80 diode Diode BFM bfm 2 TERMINAL DIODE GGT DIODE Diode GEG Diode GFK 42 bem diode GEZ DIODES
    Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction


    Original     		PDF DO-214AB Diode GFK GFX DIODE BJE 80 diode Diode BFM bfm 2 TERMINAL DIODE GGT DIODE Diode GEG Diode GFK 42 bem diode GEZ DIODES

    GEK DIODES

    Abstract: Diode GFK Diode BFX 514 GEZ DIODES BDP 282 DIODE BFM DIODE BFT marking code GGP DIODE MARKING GEK GFX DIODE
    Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction


    Original     		PDF DO-214AB GEK DIODES Diode GFK Diode BFX 514 GEZ DIODES BDP 282 DIODE BFM DIODE BFT marking code GGP DIODE MARKING GEK GFX DIODE

    GFM, TVS

    Abstract: GHR TVS marking ghm 1.5SMCJ Series marking GEY marking GFQ marking BGG tvs TVS GGV bfu 450 c BFU 450
    Text: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - Surface Mount - 1500 Watt Specifications - 1.5SMCJ Series Electrical Characteristics Part Number* 1.5SMCJ5.0 1.5SMCJ5.0A 1.5SMCJ6.0


    Original     		PDF 5SMCJ10 5SMCJ10A 5SMCJ11 5SMCJ11A 5SMCJ12 5SMCJ12A 5SMCJ13 5SMCJ13A 5SMCJ14 5SMCJ14A GFM, TVS GHR TVS marking ghm 1.5SMCJ Series marking GEY marking GFQ marking BGG tvs TVS GGV bfu 450 c BFU 450

    marking code BFK

    Abstract: GFX DIODE Diode GFK DIODE BJE gfp 35 GFM 78 GGT DIODE ON on 440 gex diode BFR 30 transistor GFK 77
    Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction


    Original     		PDF DO-214AB marking code BFK GFX DIODE Diode GFK DIODE BJE gfp 35 GFM 78 GGT DIODE ON on 440 gex diode BFR 30 transistor GFK 77

    GENERAL SEMICONDUCTOR MARKING bfm

    Abstract: general semiconductor marking code GFX 9AT1 transzorb marking code GEM BFR 90
    Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional


    Original     		PDF SMCG188CA J-STD-020, AEC-Q101 DO-215AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GENERAL SEMICONDUCTOR MARKING bfm general semiconductor marking code GFX 9AT1 transzorb marking code GEM BFR 90

    SDIM40B060A

    Abstract: No abstract text available
    Text: -JGlitron Devices, Inc. FEATURES: SDIM40B060A 40 A 600 V Six - Pack Configuration PACKAGE: 20 A, 600 V at Tc = 110°C 3 Phase Output Inverter with Fast Free-Wheel Diodes Insulated Metal Baseplate 600 V Switching SOA Capability Short Circuit Rated Low On-State Saturation \foltage


    OCR Scan     		PDF SDIM40B060A IS09001 SDIM40B060A

    PJ 969 diode

    Abstract: DIODE 25PH 500 M302E71 pj 809 HGTG20N50C1D 08/bup 3110 transistor
    Text: HARRIS SEMICOND SECTOR ffl j a r s 1 bêE D • Lt30SE71 00502Ö3 732 ■ H A S HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 20 Amp, 500 Volt • Latch Free Operation


    OCR Scan     		PDF t30SE71 HGTG20N50C1D O-247 500ns AN7254 AN7260) M302E71 QD50S67 PJ 969 diode DIODE 25PH 500 pj 809 HGTG20N50C1D 08/bup 3110 transistor

    Diode LT 443

    Abstract: diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D
    Text: rjn HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features JE D E C TD-220AB • 10 Amp, 400 and 500 Volt T O P VIEW • V c e o n 2.5V Max.


    OCR Scan     		PDF HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D TD-220AB TP10N AN7254 AN7260) Diode LT 443 diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D

    10N40F1D

    Abstract: 10N50F1D GE 639 transistor 10n50 10N50F1 HGTP10N50F1D GEP diode RN2512
    Text: HGTP10N40F1D, HGTP10N50F1D îs j h a r r i s t u » ™ 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Package Features • 10A, 400V and 500V JEOEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4|iS


    OCR Scan     		PDF HGTP10N40F1D, HGTP10N50F1D O-220AB HGTP10N50F1D 00A/U9 10N40F1D 10N50F1D GE 639 transistor 10n50 10N50F1 GEP diode RN2512

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


    OCR Scan     		PDF 500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V

    G6N50E1D

    Abstract: G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor
    Text: HGTP6N40E1D, HGTP6N50E1D d ì H a r r is \MÌ S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR GATE • T f a l l : < 1.0|iS


    OCR Scan     		PDF HGTP6N40E1D, HGTP6N50E1D O-220AB 50iiH G6N50E1D G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor

    Untitled

    Abstract: No abstract text available
    Text: HARRI S SEHICOND SECTOR ill H A R R IS \M J s e m i c o n d u c t o r bôE D • M3D2S71 HAS 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features Package • 20 Amp, 400 and 500 Volt JEDEC TO-218 AC TOP VIEW • Vce on 2.5V Max.


    OCR Scan     		PDF M3D2S71 O-218 HGTH20N40C1D, HGTH20N40E1D HGTH20N50C1D, HGTH20N50E1D AN7254 AN7260) 100AJ

    10n50c1d

    Abstract: 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1
    Text: m l-L A J R F R IS tip s E M , c o N D u c T o R HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package • 10A, 400V and 500V JEDEC TO-22QAB • ^CE ON ' 2.5V Max.


    OCR Scan     		PDF HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-22QAB HGTP10N50E1D AN7254 10n50c1d 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCON» SECTOR bö E B M3D2S71 G0 S0 2? i » 72T HHAS HARRIS HGTH12N40C1D, HGTH12N40E1D s E M , c o N D u c T o R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features •


    OCR Scan     		PDF M3D2S71 HGTH12N40C1D, HGTH12N40E1D HGTH12N50C1D, HGTH12N50E1D O-218AC 40E1D/50E1D D/50C1D AN7254 AN7260)