Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GERMANIUM POWER DEVICES CORPORATION Search Results

    GERMANIUM POWER DEVICES CORPORATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM POWER DEVICES CORPORATION Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BGT24MR2 VQFN32-9 BGT24MR2 VQFN32-9-PO VQFN32-9 PDF

    BGT24MTR12

    Abstract: 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC PDF

    T0825

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO T0825 PDF

    B7HF200

    Abstract: receiver mmic BGT24MR2 homodyne receiver SI MMIC DOWNCONVERTER RO4350B prices quadrat Germanium power
    Text: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BGT24MR2 VQFN32-9 BGT24MR2 VQFN32-9-PO VQFN32-9 B7HF200 receiver mmic homodyne receiver SI MMIC DOWNCONVERTER RO4350B prices quadrat Germanium power PDF

    B7HF200

    Abstract: No abstract text available
    Text: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BGT24MR2 VQFN32-9) BGT24MR2 VQFN32-9-PO VQFN32-9 VQFN32-9 B7HF200 PDF

    B7HF200

    Abstract: No abstract text available
    Text: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BGT24MR2 VQFN32-9) BGT24MR2 VQFN32-9-PO VQFN32-9 VQFN32-9 B7HF200 PDF

    BGT24MTR11

    Abstract: B7HF200 sun resistor 400 mohm 24 GHz transceiver VQFN32-9 IFX VQFN32
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BGT24MTR11 VQFN32-9 BGT24MTR11 VQFN32-9-PO VQFN32-9 B7HF200 sun resistor 400 mohm 24 GHz transceiver IFX VQFN32 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		BGT24MTR11 VQFN32-9 BGT24MTR11 VQFN32-9-PO VQFN32-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.2, 2014-07-15 RF & Protection Devices Edition 2014-07-15 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BGT24MTR11 VQFN32-9) BGT24MTR11 VQFN32-9-PO VQFN32-9 VQFN32-9 PDF

    germanium transistors NPN

    Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
    Text: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A


    OCR Scan     		2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 germanium transistors NPN TO13 MT28 Germanium power 2N1044 2N1045 2N2556 2N2557 PDF

    Germanium Power Devices

    Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
    Text: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)


    OCR Scan     		GAV30 GAV40 GAV100 GAV30 GAV100 MIL-I-45208. Germanium Power Devices germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power Germanium PDF

    Germanium Power Diodes

    Abstract: T-75 A HIGH VOLTAGE DIODES Germanium power 490mV Germanium Power Devices G40S20 430mv germanium
    Text: G Germanium Power Devices Corporation * Ge Schottky Rectifier D05 High Reverse Energy/Ultra-Low Vp G40S20 PRELIMINARY SPECIFICATIONS MAXIMUM RATINGS: IF avg Average forward current rectangular waveform 40 A IFM Peak rectified forward current 50%duty cycle


    OCR Scan     		G40S20 300usec 400mv 340mv 310mv 450mv 390mv 360mv 490mv 430mv Germanium Power Diodes T-75 A HIGH VOLTAGE DIODES Germanium power Germanium Power Devices G40S20 germanium PDF

    germanium power devices corporation

    Abstract: GM8HS InGaas PIN photodiode, 1550 NEP Germanium power diode germanium catalog GM7VHR gep800 ingaas apd photodetector GM2HS GM10HS
    Text: Small & Large Area pn, pin Two-Color Detector OPTOELECTRONIC PRODUCTS Ge Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available Germanium Power Devices Corporation GPDOS00004 G Introduction/Glossary of Terms


    OCR Scan     		GPDOS00004 MIL-45208 MIL-S-19500 MIL-S-19500. MIL-STD-883, germanium power devices corporation GM8HS InGaas PIN photodiode, 1550 NEP Germanium power diode germanium catalog GM7VHR gep800 ingaas apd photodetector GM2HS GM10HS PDF

    germanium power devices corporation

    Abstract: G15S20 3T47375 Germanium Power Devices 400AMPS Germanium power
    Text: 3T47375 G0G0731 b=î4 l ü l Germanium Power Devices Corporation G -« *. High Reverse Énergy/Ultra-Low Vp G 15S 20 PRELIMINARY SPECIFICATIONS M k t,. ^ "*Ls°U J î 5 S ^ ! i _ | MAXIMUM RATINGS: IF avg


    OCR Scan     		3T47375 G0G0731 300psec 305mv 350mv 390mv 440mv 240mv 290mv germanium power devices corporation G15S20 3T47375 Germanium Power Devices 400AMPS Germanium power PDF

    2n2153

    Abstract: 2N2152 2N1522 TO41 germanium power transistors TO36 germanium PNP 2N1167 2N2287 2N1163
    Text: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type YCBO V V e to V V,.o V V c t, V Vca V h FE Min. YcE Max. V Ic A SA TVRA TION VOL TA GES Yc£Ij Y 11f . . / c @ Ib V V A A 0,-C "C /W 25 AMP GERMANIUM PNP Cont.) 2NI162A 2N1163 2N1163A 2N1164


    OCR Scan     		2N1162A 2N1163 2N1163A 2N1164 2N1164A 2N1165 2N1165A 2N1166 2N11T-36 8-32NC-2A 2n2153 2N2152 2N1522 TO41 germanium power transistors TO36 germanium PNP 2N1167 2N2287 PDF

    2N3614

    Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022


    OCR Scan     		2N1137B 2N1138 2N1138A 2N1138B 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N3614 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900 PDF

    AC176

    Abstract: AC184 AC127 AC128 2N2635 AC122 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924
    Text: ~ - - , - - • - 7 .-«. G E R M A N I U M PO W E R D E V I C E S Fq — - - SDE D . - . ■ . _ _£. _ ^ . - _. . - 3T473?5 00Q05Q? 2 ■ GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES


    OCR Scan     		3T473 00Q05Q? AC107 AC116 AC117 AC121--IV AC121--V AC121--VI AC121--VII AC122 AC176 AC184 AC127 AC128 2N2635 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924 PDF

    Germanium Power Devices

    Abstract: GAP100 GAP60CS 10E-15 GAP300 GAP60 GAP75 apd 1550 fall time, dark, capacitance 850nm APD germanium power devices corporation
    Text: E GAP60 GAP60CS GAP75 GAP100 GAP300 Electrical Characteristics @ 25 °C GAP60/CS GAP75 GAP100 60 75 100 O Responsivity @ 850nm 0.10 0.20 0.10(0.20) 0.10 (0.20) 0.10 (0.20) AAV min. (typ.) 1300nm 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) A/W min. (typ.)


    OCR Scan     		GAP60 GAP60CS GAP75 GAP100 GAP300 GAP60/CS GAP75 850nm Germanium Power Devices 10E-15 GAP300 apd 1550 fall time, dark, capacitance 850nm APD germanium power devices corporation PDF

    OC26 transistor

    Abstract: germanium power transistors transistor NS257 germanium power devices corporation OC35 OC23 OC-36 OC26 AUY26 Germanium Power Devices
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT GAIN at Type Number Vc* V max YCEO V max V max lc A max hn m'm-max 80 80 80 65 80 60 60 60 45 60 20 20 20 20 20 8 8 8 3 3 12.5-25 20-40 30-60 30-50 20-35 AUY27 AUY28 AUY29 80 90 50 50 50 60 65 32 32 32


    OCR Scan     		AUY22 AUY24 AUY26 AUY27 AUY28 AUY29 AUY34 NS257 T0-18 OC26 transistor germanium power transistors transistor NS257 germanium power devices corporation OC35 OC23 OC-36 OC26 AUY26 Germanium Power Devices PDF

    Untitled

    Abstract: No abstract text available
    Text: E GAV30 GAV50 GAV60 GAV100 Electrical Characteristics @ 25 °C GAV30 GAV50 GAV60 GAV100 Units Quantum Efficiency 60 70 60 (70) 60 (70) 60 (70) % min. (typ.) Responsivity @1300nm .76 (.84) .76 (.84) .76 (.84) .76 (.84) AAV min. (typ.) M=1 Breakdown Voltage *


    OCR Scan     		GAV30 GAV50 GAV60 GAV100 GAV30 GAV60 1300nm IL-45208 PDF

    2N398A

    Abstract: Germanium Transistors 2N396 2N965
    Text: GERMANIUM PNP MESA TRANSISTORS VcBO f^Emo Max V Max 2N828A 2N829 2N808 2N960 2N961 15 15 30 15 12 2.5 2.5 2.5 2.5 2.0 2N962 2N962 2N963 2N964 2N964 12 12 12 15 15 1.2 1.3 2.0 2.5 2.5 2N964A 2N965 2N966 2N967 2N968 15 12 12 12 15 2.5 2.0 1.2 2.0 2.5 2N969 2N970


    OCR Scan     		2N828A 2N829 2N808 2N960 2N961 2N962 2N963 2N964 2N398A Germanium Transistors 2N396 2N965 PDF