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    GERMANIUM TRANSISTORS PNP Search Results

    GERMANIUM TRANSISTORS PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM TRANSISTORS PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nte102

    Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
    Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:


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    PDF NTE102 NTE103 200mV nte102 NTE103 vpt 20 germanium transistors NPN NTE10-3

    NTE131MP

    Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
    Text: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.


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    PDF NTE131 NTE155 100mA NTE131MP NTE155 NTE131 germanium transistors NPN Germanium power

    NTE102A

    Abstract: germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power
    Text: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


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    PDF NTE102A NTE103A 300mA 500mA, NTE102A germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power

    NTE102A

    Abstract: nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium
    Text: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


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    PDF NTE102A NTE103A 300mA 500mA, NTE102A nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium

    2n2137

    Abstract: No abstract text available
    Text: , Una. <£tmL-donctwsto 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6008 FAX: (973) 3764980 2N2137 (GERMANIUM) PNP germanium industrial power transistors for driver applications in high reliability equipment. MAXIMUM RATINGS


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    PDF 2N2137 2n2137

    MP3731

    Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP
    Text: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed


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    PDF MP2100A, MP2200A, MP2300A, MP2400A MP2000A MP3730 MP3731 MP3730 MP3731 MP2200A O446 Motorola germanium transistor pnp MP2100A MP2300A MP2400A germanium transistors PNP

    motorola MP2400A

    Abstract: MP2100A Motorola germanium transistor pnp MP2200A AN-415 MP2000A MP2300A MP2400A Germanium power
    Text: MP2000A GERMANIUM MP2100A MP2200A MP2300A MP2400A PNP GERMANIUM POWER TRANSISTORS 25 AMPERES ADE POWER TRANSISTORS . . . designed fo r high-voltage switching, and pow er converter 30-120 VOLTS 106 WATTS applications. • A lloy-D iffused Epitaxial Construction


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    PDF MP2000A MP2100A MP2200A MP2300A MP2400A MP2400A motorola MP2400A Motorola germanium transistor pnp AN-415 Germanium power

    transistor 2SC114

    Abstract: transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t * - k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 transistor 2SC114 transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A

    TIP27

    Abstract: 190n0 2N1384 2N866 2N907 transistor BD400 BD109 BD109-16 1743-0810 1843-3705
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C MAX. 1 hFE ! MIN NlAXl tae


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    BD264

    Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    MR830

    Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
    Text: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt­ age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —


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    PDF MP600 MP603 MP600 MP601 MP602 MP603 MR830 germanium power transistors Germanium power

    MP2144

    Abstract: MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    PDF NPN110. 2N3633/52 ME8101 TIX895 1300M5A 1500MS 2500M5 2N2446 2N2379 3000MIA MP2144 MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132

    MD14

    Abstract: usaf521es071m MD14 package 81T2 A249 A298 MT1070 usaf520es070 usaf521es071
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


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    PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 MD14 usaf521es071m MD14 package 81T2 A249 A298 MT1070 usaf520es070 usaf521es071

    transistor ac 152

    Abstract: AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121
    Text: ESC ]> • 023SbGS 000402^ 3 H S I E 6 ./ PNP Germanium Transistors A C 121 _ SIEMENS AKTIEN6ESELLSCHAF -— — fo r AF, driver and output stages o f m edium perform ance A C 121 and AC 152 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 metal case


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    PDF 235b05 Q60103-D121 152IV Q60103-X152-D Q60103-E121 Q6010E AC162 fl535b05 0Q0M03M T-29-tl transistor ac 152 AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121

    2sd155

    Abstract: SN232 BLY92 2SD154 BD109 BLY88 TIP27 MD17A X51c stc1201
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors kI B H H LINE No. TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    PDF NPN110. BLY88 BLY92 700MI 500MI MT72C BUY43 MHT5901 MHT5902 10On0 2sd155 SN232 BLY92 2SD154 BD109 TIP27 MD17A X51c stc1201

    D1302

    Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    BD264A

    Abstract: 2N3836 2N5417 BD263 BSX86 ML101B SC1625
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    2SC114

    Abstract: 2SA647 2SC114 transistor usaf516es047m TRM7015 2N2180 MD14 package 81T2 A249 A298
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 2SA647 2SC114 transistor usaf516es047m TRM7015 2N2180 MD14 package 81T2 A249 A298

    C621

    Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    MP2143

    Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2143 MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235

    2SC114

    Abstract: transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 TQ59A transistor bdy88 BDY88 2SC109
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 TQ59A transistor bdy88 BDY88 2SC109

    AD166

    Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT


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    KJE transistor

    Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
    Text: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case


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    PDF 0235bOS Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1 Q60103-X151-G Q62901-B1 AC151, KJE transistor KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor