Untitled
Abstract: No abstract text available
Text: SEMiX 191KD . THYRISTOR BRIDGE,SCR,BRIDGE % &' % ' '& * +, - . / % % (% * 12 - 3 +24 5 * +, 6 0 22 722 Symbol Conditions (% (&' = SEMiX 1s Rectifier Diode Module SEMiX 191KD &8' 9 1:"7 Values Units
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191KD
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thyristor cd
Abstract: 341D
Text: SEMiX 341D . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter % &' % ' %" ' " * +, - . % % -/ * 01 2 . , 3,
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THYR
Abstract: GEs thyristor
Text: SEMiX 171KH . THYRISTOR BRIDGE,SCR,BRIDGE % &' % ' %" ' * '& + ,- . / 0 1 % % *% + - . 2 3-4 * + 3, 5 1 - 6- Symbol Conditions *% 2 3-4 * + 3, .-1 5 4 *&' *0; + , 5 4 - *0; + - 5 4 -
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171KH
THYR
GEs thyristor
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Thyr
Abstract: No abstract text available
Text: SEMiX 171KH . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter % &' % ' %" ' * '& + ,- . / 0 1 % % *% + - .
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171KH
Thyr
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IXYS SCR Gate Drive
Abstract: IXYS SCR MODULE Gate Drive thyristor b 136 Emitter Turn-Off thyristor mcna120ui2200ted
Text: MCNA120UI2200TED preliminary 3~ Rectifier High Voltage Thyristor Module Brake Chopper VRRM = 2200 V VCES = 1700 V I DAV = 117 A I C25 = 113 A I FSM = 500 A VCE sat = 2.5 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part number MCNA120UI2200TED
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MCNA120UI2200TED
60747and
20120307a
2768-T1-m
IXYS SCR Gate Drive
IXYS SCR MODULE Gate Drive
thyristor b 136
Emitter Turn-Off thyristor
mcna120ui2200ted
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IXGP2N100
Abstract: IXGP2N100A 2N100 IXYS 2N100A
Text: High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C
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2N100
2N100A
O-220
IXGP2N100A
IXGP2N100
IXGP2N100
IXGP2N100A
IXYS
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Untitled
Abstract: No abstract text available
Text: VCES High Voltage IGBT IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C 2 A ICM TC = 25°C, 1 ms
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2N100
2N100A
O-220
IXGP2N100A
IXGP2N100
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Untitled
Abstract: No abstract text available
Text: VVZB135-16ioXT 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 150 A I C25 I FSM = 700 A VCE sat = = 120 A 1.8 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC Part number VVZB135-16ioXT Backside: isolated
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VVZB135-16ioXT
60747and
20120827c
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VVZB120-16IOX
Abstract: No abstract text available
Text: VVZB120-16ioX 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 120 A I C25 IFSM = 155 A = 700 A VCE sat = 1.9 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part name VVZB120-16ioX O1 S1 D E1 I1 M1 W1 L7 G7
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VVZB120-16ioX
60747and
20111115b
VVZB120-16IOX
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Untitled
Abstract: No abstract text available
Text: VVZB170-16ioXT 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 170 A I C25 = 155 A I FSM = 1100 A VCE sat = 2.05 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part number VVZB170-16ioXT Backside: isolated
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VVZB170-16ioXT
60747and
20120827c
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Untitled
Abstract: No abstract text available
Text: MCMA240UI1600ED preliminary 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 240 A I C25 = 155 A I FSM = 1500 A VCE sat = 2.05 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part number MCMA240UI1600ED Backside: isolated
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MCMA240UI1600ED
60747and
20140311a
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Untitled
Abstract: No abstract text available
Text: VVZB170-16ioXT 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 180 A I C25 = 155 A I FSM = 1100 A VCE sat = 2.05 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC Part number VVZB170-16ioXT Backside: isolated
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VVZB170-16ioXT
60747and
20120827c
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Untitled
Abstract: No abstract text available
Text: VVZB120-16ioX 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 180 A I C25 I FSM = 700 A VCE sat = 2.05 V = 155 A 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part number VVZB120-16ioX O1 Backside: isolated
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VVZB120-16ioX
60747and
20130604c
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asymmetrical SCR
Abstract: XT2108-1001 high voltage scr ST2108-601 SCR 100A 1000V SCR 200A 1000V thyristor 600v 5A scr 600A thyristor scr XT2108 scr 600V 10A
Text: MARCONI CKT M a ro n i 57Ö3442 3QE D TECHNOLOGY DG0177Ü 1 • FAST TURÌNFOrsI H IG H VOLTAGE S C R 's r-;i5W7 XT2108'01 tr = 160ns Vq RM = 1400V Electronic Devices Repetitive Peak Volta ges Max. R ise Tim e T Y PE NUMBER lr p.5 T ease = 2 5 0 3C X T 2 1 0 8-140 1
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DG0177Ã
XT2108
160ns
XT2108-1401
XT2108-1201
XT2108-1001
XT2108-801
ST2108-601
00A//XS
asymmetrical SCR
high voltage scr
SCR 100A 1000V
SCR 200A 1000V thyristor
600v 5A scr
600A thyristor scr
scr 600V 10A
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Untitled
Abstract: No abstract text available
Text: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC
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0D021A4
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SIEMENS thyristor
Abstract: OPTOCOUPLER thyristor din 41 siemens OF IC 741 DIN 41 782 mos Turn-off Thyristor diode din
Text: Symbole, Begriffe, Normen Symbole und Begriffe der w ichtigsten Größen Symbole Begriffe C C,o Kapazität Optokoppler-Kapazität Eingang/Ausgang Eingangskapazität Ausgangskapazität Rückwirkkapazität Kapazität (Sensor/Source) Tastverhältnis/Tastgrad (D = i0/r )
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147-OC,
147-2G,
SIEMENS thyristor
OPTOCOUPLER thyristor
din 41
siemens OF IC 741
DIN 41 782
mos Turn-off Thyristor
diode din
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B2HKF
Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Text: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °
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semikron skiip 83
Abstract: SKIIP83ahb15t1 83ahb15t1 SKIIP 83 AHB 15 T 1 AHB15T1 SKiip+83+EC+125+T1 semikron skiip 30 IGBT with V-I characteristics skiip t1 miniskiip 29
Text: 5E MI K R Ö N SKiiP 83 AHB15T1 Absolute Maximum Ratings Sym bol |C o n dition s 1 Values Units 1500 V A A A2s Bridge Rectifier V rrm 12 53> Ifsm / I tsm Theatsink — 80 ”C tp = 10 ms; sin. 18 0 °C, Tj = 2 5 °C l2t tp = 10 ms; sin. 18 0 °C, Tj = 2 5 °C
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-600V
semikron skiip 83
SKIIP83ahb15t1
83ahb15t1
SKIIP 83 AHB 15 T 1
AHB15T1
SKiip+83+EC+125+T1
semikron skiip 30
IGBT with V-I characteristics
skiip t1
miniskiip 29
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VL800
Abstract: No abstract text available
Text: BIXYS High Voltage IGBT ^C E S IX G P 2 N 1 0 0 j 1000 V ! IX G P 2 N 1 0 0 A 1000 V C90 : ^C E S A T 1.5 A : 3.5 V 1.5 A I 4.0 V Advanced Technical Information Symbol Test C o n d itio n s V CES Tj = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RGÊ= 1 MQ
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O-220
VL800
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BH 3540
Abstract: No abstract text available
Text: □ IXYS IX S P2N 100 IXSP2N 100A Advanced Technical Information v CES High Voltage IGBT IXSP2N100 1000 V IXSP 2N100A 1000 V Sym bol T est C o n d itio n s v CES Tj = CGR Tj = 25°C to 150°C; l^E= 1 M ß 1000 V ±20 V GEM ±30 V Tc 25°C ^C90 Tc = 25 °C, 1 ms
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IXSP2N100
IXSP2N100A
2N100A
D-68623
BH 3540
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APT40GF100BN
Abstract: No abstract text available
Text: ADVANCE» POI il ER TECHNOLOGY b lE T> • □SS T'lÜ T QOOÜfl'lO b3T * A V P A d v a n ced P o w er Te c h n o l o g y 0 APT40GF100BN 1000V 40A POWER MQS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS
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APT40GF100BN
APT40GF100BN
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY blE D • □ S S 7 t10ci ÚGQOññb 1 0 1 WAVP Am U N C ÊZD ROW ER Te c h n o l o g y APT25GF100BN 1000V 25A POWER MOS IV IGBT N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS
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t10ci
APT25GF100BN
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Untitled
Abstract: No abstract text available
Text: ADVANCED POUER TECHNOLOGY b lE D Q R S 7 W ] 0GG0Û7G Ô41 « A V P • A dvanced P o w er Te c h n o l o g y APT65GL100BN 1000V 65A POWER MOS IV IGBT N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT65GL100BN
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transistor GC cd
Abstract: No abstract text available
Text: A DV A NC ED POWER TECHNOLOGY b lE 0 2 S 7 ti D ,i D GDODflbb 310 HAVP ADVANCED PO W ER Te c h n o lo g y APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT45GL100BN
transistor GC cd
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