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    Vishay Beyschlag K102J15C0GF53H5G

    K 50V 1NF 5% C0G BULK GREEN AUTO
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    DigiKey K102J15C0GF53H5G Bulk 49,019 1
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    Vishay Beyschlag K102J15C0GF53L2

    CAP CER 1000PF 50V C0G/NP0 RAD
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    DigiKey K102J15C0GF53L2 Bulk 47,015 1
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    Vishay Beyschlag K101K15C0GF53L2

    CAP CER 100PF 50V C0G/NP0 RADIAL
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    DigiKey K101K15C0GF53L2 Bulk 27,387 1
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    Vishay Beyschlag K471J15C0GF53H5H

    CAP CER 470PF 50V C0G RADIAL
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    DigiKey K471J15C0GF53H5H Bulk 20,346 1
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    Vishay Beyschlag K330J15C0GF53K2

    CAP CER 33PF 50V C0G/NP0 RADIAL
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    DigiKey K330J15C0GF53K2 Bulk 20,000 1
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    GF53 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GF5352WC Hubbell Connector: Heavy-Duty Connector: RCP: 2: SCR Original PDF

    GF53 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GFCI

    Abstract: hubbell 5352 E41978 hubbell GFCI GF53 GF5352WC ul498 94-V2 UL 943 LR2488
    Text: Product Datasheet - GF5352WC Product Data Sheet gf 5352 GF5352WC Circuit Guard Commercial Specification Grade GFCI Duplex Receptacle Hubbell Wiring Device-Kellems Product Specifications GFCI Product Type Amperage 20A Grade Commercial Color Voltage 125V


    Original     		PDF GF5352WC 20Datasheet 20GF5352WC 5-20R E41978, LR2488. 94-V2 GFCI hubbell 5352 E41978 hubbell GFCI GF53 GF5352WC ul498 94-V2 UL 943 LR2488

    Untitled

    Abstract: No abstract text available
    Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123BBBB BA123BB7B69D8 3 !B "989B3#778 7$%B&% 4D9A E8D9AB'B1A8DF9 78 BA123BB7B69D8 3 ! C77777BD246A4E5  *B3+  /


    Original     		PDF 1789AB2CDE7B37FD 989B3 C77777 246A4E5 A89-7B. B123456 B1323B. A79ED -B32B123456B DE7B9AAB47

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGFC47V5864

    Abstract: 5.8 ghz transmitter
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ∼ 6.4GHz


    Original     		PDF MGFC47V5864 MGFC47V5864 47dBm June/2004 5.8 ghz transmitter

    GF5362

    Abstract: GF5262 hubbell GFCI gf5362i GF5362W GFCI E41978 GF5262I GF5262W GF-82
    Text: Circuit Guard Redesigned Industrial GFCI Receptacle Hubbell Wiring Device-Kellems has redesigned the industrial grade GFCI receptacle product line. The GFCI receptacles are available in 15 or 20 Amp 120V AC and are ideally suited for harsh and abusive environments where


    Original     		PDF E41978, H4690 GF5362 GF5262 hubbell GFCI gf5362i GF5362W GFCI E41978 GF5262I GF5262W GF-82

    Untitled

    Abstract: No abstract text available
    Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123BBBB BA123BB7B69D8  !" 989B3#778 !7$%B"%& 4D9A E8D9AB'B1A8DF9 78 BA123BB7B69D8  !" C77777BD246A4E5  *  


    Original     		PDF 1789AB2CDE7B37FD 989B3 C77777 246A4E5 B0312B- 7BA79ED B31B123456B DE7B9AAB37 B31B123456 D37EBD

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC48B5258 5.2~5.8GHz BAND 60W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC48B5258 device is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ∼ 5.8GHz


    Original     		PDF MGFC48B5258 MGFC48B5258 48dBm 25deg 202mA

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    50W 4 GHz linear power amplifier

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47V5864 5.8 – 6.4 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4


    Original     		PDF MGFC47V5864 MGFC47V5864 50W 4 GHz linear power amplifier

    P1dB50

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0


    Original     		PDF MGFC47A4450 MGFC47A4450 P1dB50

    67a7

    Abstract: E3225
    Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123BBBB BA123BB7B69D8  !" #989B3$778 7%&B'& 4D9A E8D9AB B1A8DF9*78 BA123BB7B69D8  !" C77777BD246A4E5 62+''  


    Original     		PDF 1789AB2CDE7B37FD 989B3 C77777 246A4E5 A89-7B. B1323B. 7BA79ED -B32B123456B DE7B9AAB47 -B32B123456 67a7 E3225

    MGFC48B5258

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC48B5258 5.2~5.8GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC48B5258 device is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ∼ 5.8GHz


    Original     		PDF MGFC48B5258 MGFC48B5258 48dBm 25deg 202mA

    50W 4 GHz linear power amplifier

    Abstract: GF53 "GaAs FET" GAAS FET AMPLIFIER f 10Mhz to 2 GHz High Power GaAs FET MITSUBISHI ELECTRIC SEMICONDUCTOR MGFC47A7785
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A7785 7.7 ~ 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION FEATURES OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ∼ 8.5


    Original     		PDF MGFC47A7785 MGFC47A7785 168mA 35dBm 10MHz June/2004 50W 4 GHz linear power amplifier GF53 "GaAs FET" GAAS FET AMPLIFIER f 10Mhz to 2 GHz High Power GaAs FET MITSUBISHI ELECTRIC SEMICONDUCTOR

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0


    Original     		PDF MGFC47A4450 MGFC47A4450

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    MGFC47A7785

    Abstract: GF53
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A7785 7.7 ~ 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION FEATURES OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ∼ 8.5


    Original     		PDF MGFC47A7785 MGFC47A7785 168mA 35dBm 10MHz GF53

    MGFC47V5864

    Abstract: 5.8 ghz transmitter
    Text: M ITSU B ISH I S E M IC O N D U C T O R <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz


    OCR Scan     		PDF MGFC47V5864 MGFC47V5864 47dBm 25deg 10MHz 5.8 ghz transmitter

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    2155G

    Abstract: 8 ohm 1w grm40 CR10 GRM111 MGFS48BK2122A C7-GRM111 1w, GaAs FET
    Text: MITSUBISHI SEM ICONDUCTOR <GaAs FET> MGFS48BK2122A 2.1 - 2.2 GHz BAND 60W GaAs FET D E S C R IP T IO N The MGFS48BK2122A is a 60W partial-match type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. OUTLINE DRAWING Unit : millimeters


    OCR Scan     		PDF MGFS48BK2122A MGFS48BK2122A 17GHz 25deg 330uF IAS432085 AS432086 MGFS48BK2121A MGFS48BK2122AS11 2155G 8 ohm 1w grm40 CR10 GRM111 C7-GRM111 1w, GaAs FET

    PCF0700

    Abstract: PCF0450 pcf 0700 philips PCF0330 pcf0700 philips HEF4000B Family specifications SOT134 sot154b0 hef4526 PCC0330
    Text: DEVELOPMENT SAMPLE DATA CMOS GATE ARRAYS T h is in fo r m a tio n is d e riv e d fr o m d e v e lo p m e n t sam ples m ade a v aila b le f o r e v a lu a tio n . I t does n o t necessarily im p ly th a t th e d evice w ill g o in to re g u la r p r o d u c tio n .


    OCR Scan     		PDF PCF/PCC0330; -40to PCF0330, PCFCI450, PCF0700 PCF1100. HEF4071B HEF4724B HEF4072B HEF4731B; PCF0450 pcf 0700 philips PCF0330 pcf0700 philips HEF4000B Family specifications SOT134 sot154b0 hef4526 PCC0330

    MGFC47V5864

    Abstract: mitsubishi optical transmitter
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> R/IGFC47V5864 5.8~6.4G H z BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGFC47V5864 MGFC47V5864 47dBm mitsubishi optical transmitter

    MGFC47A4450

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A4450 4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47A4450 device is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGFC47A4450 MGFC47A4450 47dBm RG-10

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FETs MGFC47A7785 7 .7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC47A7785 device is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 7.7 ~ 8.5GHz


    OCR Scan     		PDF MGFC47A7785 MGFC47A7785 47dBm 25deg 25deg 168mA

    C47V5864

    Abstract: 817 CN C47V GF53
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47V5864 5 . 8 - 6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FC 47V5864 device is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 5.8 ~ 6 .4 G H z


    OCR Scan     		PDF MGFC47V5864 47V5864 47dBm transm30 C47V5864 817 CN C47V GF53