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    GFC39V6471

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V6471 s s s * “ " " 6 .4 —7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The GFC39V6471 is an internally impedance-matched GaAs power F E T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


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    GFC39V6471 MGFC39V6471 Item-01: Item-51: 27C102P, RV-15 16-BIT) GFC39V6471 PDF